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Results: 1-8 |
Results: 8
TRANSIMPEDANCE AMPLIFIERS BASED ON SI SIGE MODFETS/
Authors: SAXARRA M GLUCK M ALBERS JN BEHAMMER D LANGMANN U KONIG U
Citation: M. Saxarra et al., TRANSIMPEDANCE AMPLIFIERS BASED ON SI SIGE MODFETS/, Electronics Letters, 34(5), 1998, pp. 499-500
SIMS DEPTH PROFILING OF VERTICAL P-CHANNEL SI-MOS TRANSISTOR STRUCTURES
Authors: ZASTROW U LOO R SZOT R MOERS J GRABOLLA T BEHAMMER D VESCAN L
Citation: U. Zastrow et al., SIMS DEPTH PROFILING OF VERTICAL P-CHANNEL SI-MOS TRANSISTOR STRUCTURES, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 203-207
VERTICAL SI P-MOS TRANSISTOR SELECTIVELY GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: LOO R VESCAN L BEHAMMER D MOERS J GRABOLLA T LANGEN W KLAES D ZASTROW U KORDOS P
Citation: R. Loo et al., VERTICAL SI P-MOS TRANSISTOR SELECTIVELY GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 294(1-2), 1997, pp. 267-270
BASE CONTACT RESISTANCE LIMITS TO LATERAL SCALING OF FULLY SELF-ALIGNED DOUBLE MESA SIGE-HBTS
Authors: BEHAMMER D WIECZOREK K ALBERS JN FRIEDRICH S SCHREIBER HU BOSCH BG
Citation: D. Behammer et al., BASE CONTACT RESISTANCE LIMITS TO LATERAL SCALING OF FULLY SELF-ALIGNED DOUBLE MESA SIGE-HBTS, Solid-state electronics, 41(8), 1997, pp. 1105-1110
SI SIGE HBTS FOR APPLICATION IN LOW-POWER ICS
Authors: BEHAMMER D ALBERS JN KONIG U TEMMLER D KNOLL D
Citation: D. Behammer et al., SI SIGE HBTS FOR APPLICATION IN LOW-POWER ICS, Solid-state electronics, 39(4), 1996, pp. 471-480
SELECTIVELY GROWN VERTICAL SI-P MOS-TRANSISTOR WITH SHORT-CHANNEL LENGTHS
Authors: BEHAMMER D VESCAN L LOO R MOERS J MUCK A LUTH H GRABOLLA T
Citation: D. Behammer et al., SELECTIVELY GROWN VERTICAL SI-P MOS-TRANSISTOR WITH SHORT-CHANNEL LENGTHS, Electronics Letters, 32(4), 1996, pp. 406-407
FULLY SELF-ALIGNED DOUBLE MESA SIGE-HBT WITH EXTERNAL TRANSISTOR OPTIMIZATION
Authors: BEHAMMER D ALBERS JN GEPPERT W BOSCH BG SCHUPPEN A KIBBEL H
Citation: D. Behammer et al., FULLY SELF-ALIGNED DOUBLE MESA SIGE-HBT WITH EXTERNAL TRANSISTOR OPTIMIZATION, Electronics Letters, 32(19), 1996, pp. 1830-1832
VERTICAL MOS TECHNOLOGY WITH SUB-0.1-MU-M CHANNEL LENGTHS
Authors: GOSSNER H WITTMANN F EISELE I GRABOLLA T BEHAMMER D
Citation: H. Gossner et al., VERTICAL MOS TECHNOLOGY WITH SUB-0.1-MU-M CHANNEL LENGTHS, Electronics Letters, 31(16), 1995, pp. 1394-1396
Risultati: 1-8 |