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Results: 1-11 |
Results: 11
SPATIALLY DIRECT RECOMBINATIONS OBSERVED IN MULTIPLE DELTA-DOPED GAAS-LAYERS
Authors: LEVINE A DASILVA ECF SCOLFARO LMR BELIAEV D QUIVY AA ENDERLEIN R LEITE JR
Citation: A. Levine et al., SPATIALLY DIRECT RECOMBINATIONS OBSERVED IN MULTIPLE DELTA-DOPED GAAS-LAYERS, Superlattices and microstructures, 23(2), 1998, pp. 301-306
MINIBAND STRUCTURES AND EFFECTIVE MASSES OF N-TYPE DELTA-DOPING SUPERLATTICES IN GAN
Authors: RODRIGUES SCP ROSA AL SCOLFARO LMR BELIAEV D LEITE JR ENDERLEIN R ALVES JLA
Citation: Scp. Rodrigues et al., MINIBAND STRUCTURES AND EFFECTIVE MASSES OF N-TYPE DELTA-DOPING SUPERLATTICES IN GAN, Semiconductor science and technology, 13(9), 1998, pp. 981-988
ELECTRICAL-CONDUCTIVITY OF DELTA-DOPING SUPERLATTICES PARALLEL TO THEGROWTH DIRECTION
Authors: LEITE JR RODRIGUES SCP SCOLFARO LMR ENDERLEIN R BELIAEV D QUIVY AA
Citation: Jr. Leite et al., ELECTRICAL-CONDUCTIVITY OF DELTA-DOPING SUPERLATTICES PARALLEL TO THEGROWTH DIRECTION, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 250-255
PHOTOREFLECTANCE INVESTIGATIONS OF SEMICONDUCTOR-DEVICE STRUCTURES
Authors: SOARES JANT BELIAEV D ENDERLEIN R SCOLFARO LMR SAITO M LEITE JR
Citation: Jant. Soares et al., PHOTOREFLECTANCE INVESTIGATIONS OF SEMICONDUCTOR-DEVICE STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 267-272
METHOD FOR CALCULATING PHOTOREFLECTANCE AND ELECTROREFLECTANCE SPECTRA FROM SEMICONDUCTOR HETEROSTRUCTURES
Authors: ENDERLEIN R BELIAEV D SOARES JANT SCOLFARO LMR LEITE JR
Citation: R. Enderlein et al., METHOD FOR CALCULATING PHOTOREFLECTANCE AND ELECTROREFLECTANCE SPECTRA FROM SEMICONDUCTOR HETEROSTRUCTURES, Physical review. B, Condensed matter, 52(4), 1995, pp. 2814-2822
ENERGY-LEVELS DUE TO N-TYPE DELTA-DOPING IN SILICON
Authors: SCOLFARO LMR BELIAEV D ENDERLEIN R LEITE JR
Citation: Lmr. Scolfaro et al., ENERGY-LEVELS DUE TO N-TYPE DELTA-DOPING IN SILICON, Solid state communications, 93(5), 1995, pp. 469-469
PHOTOREFLECTANCE AND ELECTROREFLECTANCE SPECTRA FROM SPATIALLY INHOMOGENEOUS HETEROSTRUCTURES CALCULATED BY MEANS OF A NEW METHOD
Authors: BELIAEV D ENDERLEIN R SOARES JANT SCOLFARO LMR CESCHIN AM QUIVY AA LEITE JR
Citation: D. Beliaev et al., PHOTOREFLECTANCE AND ELECTROREFLECTANCE SPECTRA FROM SPATIALLY INHOMOGENEOUS HETEROSTRUCTURES CALCULATED BY MEANS OF A NEW METHOD, Superlattices and microstructures, 15(3), 1994, pp. 339-343
ELECTRONIC-STRUCTURE OF N-TYPE DELTA-DOPING MULTIPLE LAYERS AND SUPERLATTICES IN SILICON
Authors: SCOLFARO LMR BELIAEV D ENDERLEIN R LEITE JR
Citation: Lmr. Scolfaro et al., ELECTRONIC-STRUCTURE OF N-TYPE DELTA-DOPING MULTIPLE LAYERS AND SUPERLATTICES IN SILICON, Physical review. B, Condensed matter, 50(12), 1994, pp. 8699-8705
ELECTRONIC-PROPERTIES OF MULTIPLE DELTA-DOPED LAYERS IN SILICON AND GAAS
Authors: SCOLFARO LMR BELIAEV D LEITE JR LINO AT TAKAHASHI EK
Citation: Lmr. Scolfaro et al., ELECTRONIC-PROPERTIES OF MULTIPLE DELTA-DOPED LAYERS IN SILICON AND GAAS, International journal of quantum chemistry, 1994, pp. 667-673
NEW THEORETICAL-MODEL FOR OPTICAL-TRANSITIONS IN THE PHOTOREFLECTANCESPECTRUM FROM DELTA-DOPED STRUCTURES
Authors: BELIAEV D SCOLFARO LMR LEITE JR
Citation: D. Beliaev et al., NEW THEORETICAL-MODEL FOR OPTICAL-TRANSITIONS IN THE PHOTOREFLECTANCESPECTRUM FROM DELTA-DOPED STRUCTURES, Semiconductor science and technology, 8(7), 1993, pp. 1479-1482
EVIDENCE OF A 2-DIMENSIONAL TO 3-DIMENSIONAL TRANSITION IN SI DELTA-DOPED GAAS STRUCTURES
Authors: MENDONCA CAC PLENTZ F OLIVEIRA JBB MENESES EA SCOLFARO LMR BELIAEV D SHIBLI SM LEITE JR
Citation: Cac. Mendonca et al., EVIDENCE OF A 2-DIMENSIONAL TO 3-DIMENSIONAL TRANSITION IN SI DELTA-DOPED GAAS STRUCTURES, Physical review. B, Condensed matter, 48(16), 1993, pp. 12316-12318
Risultati: 1-11 |