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Results: 1-16 |
Results: 16
COMPOSITION AND POROSITY OF MULTICOMPONENT STRUCTURES - POROUS SILICON AS A 3-COMPONENT SYSTEM
Authors: BELYAKOV LV MAKAROVA TL SAKHAROV VI SERENKOV IT SRESELI OM
Citation: Lv. Belyakov et al., COMPOSITION AND POROSITY OF MULTICOMPONENT STRUCTURES - POROUS SILICON AS A 3-COMPONENT SYSTEM, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 1003-1005
MECHANISM OF ANODIC ELECTROLUMINESCENCE OF POROUS SILICON IN ELECTROLYTES
Authors: GORYACHEV DN BELYAKOV LV SRESELI OM POLISSKII G
Citation: Dn. Goryachev et al., MECHANISM OF ANODIC ELECTROLUMINESCENCE OF POROUS SILICON IN ELECTROLYTES, Semiconductors, 32(5), 1998, pp. 529-532
INFLUENCE OF SURFACE WETTABILITY ON THE CATHODIC ELECTROLUMINESCENCE OF POROUS SILICON
Authors: GORYACHEV DN SRESELI OM BELYAKOV LV
Citation: Dn. Goryachev et al., INFLUENCE OF SURFACE WETTABILITY ON THE CATHODIC ELECTROLUMINESCENCE OF POROUS SILICON, Technical physics letters, 23(1), 1997, pp. 35-37
MECHANISM OF ELECTROLUMINESCENCE OF POROUS SILICON IN ELECTROLYTES
Authors: GORYACHEV DN SRESELI OM BELYAKOV LV
Citation: Dn. Goryachev et al., MECHANISM OF ELECTROLUMINESCENCE OF POROUS SILICON IN ELECTROLYTES, Semiconductors, 31(7), 1997, pp. 716-718
STUDY OF PBTE PHOTODIODES ON A BUFFER SUBLAYER OF POROUS SILICON
Authors: BELYAKOV LV ZAKHAROVA IB ZUBKOVA TI MUSIKHIN SF RYKOV SA
Citation: Lv. Belyakov et al., STUDY OF PBTE PHOTODIODES ON A BUFFER SUBLAYER OF POROUS SILICON, Semiconductors, 31(1), 1997, pp. 76-77
EFFECT OF SURFACE WETTABILITY ON CATHODE ELECTROLUMINESCENCE OF POROUS SILICON
Authors: GORYACHEV DN SRESELI OM BELYAKOV LV
Citation: Dn. Goryachev et al., EFFECT OF SURFACE WETTABILITY ON CATHODE ELECTROLUMINESCENCE OF POROUS SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 23(1), 1997, pp. 58-63
FAST LUMINESCENCE OF PULSE-PLATED SILICON
Authors: BELYAKOV LV GORYACHEV DN SRESELI OM
Citation: Lv. Belyakov et al., FAST LUMINESCENCE OF PULSE-PLATED SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 22(3), 1996, pp. 14-18
VISIBLE AND IR ELECTROLUMINESCENCE OF POROUS SILICON
Authors: BELYAKOV LV GORYACHEV DN KOVALEV DI SRESELI OM YAROSHETSKII ID KOCH F PETROVAKOCH V
Citation: Lv. Belyakov et al., VISIBLE AND IR ELECTROLUMINESCENCE OF POROUS SILICON, Semiconductors, 29(7), 1995, pp. 667-670
ELECTROLUMINESCENCE KINETICS AND SPECTRUM OF POROUS-SILICON METAL STRUCTURES/
Authors: AVERBUKH BY ANDRIANOV AV BELYAKOV LV GORYACHEV DN KOVALEV DI SRESELI OM YAROSHETSKII ID
Citation: By. Averbukh et al., ELECTROLUMINESCENCE KINETICS AND SPECTRUM OF POROUS-SILICON METAL STRUCTURES/, Semiconductors, 29(4), 1995, pp. 327-330
PRODUCTION AND STUDY OF POROUS SILICON IN POWDERED FORM
Authors: ANDRIANOV AV BELYAKOV LV GORYACHEV DN SRESELI OM YAROSHETSKII ID
Citation: Av. Andrianov et al., PRODUCTION AND STUDY OF POROUS SILICON IN POWDERED FORM, Semiconductors, 29(4), 1995, pp. 381-384
POROUS SEMICONDUCTORS - WHY ONLY SILICON-BASED - A POSSIBLE EXPLANATION
Authors: GORYACHEV DN BELYAKOV LV SRESELI OM YAROSHETSKII ID
Citation: Dn. Goryachev et al., POROUS SEMICONDUCTORS - WHY ONLY SILICON-BASED - A POSSIBLE EXPLANATION, Semiconductor science and technology, 10(3), 1995, pp. 373-374
ENHANCED RAMAN-SCATTERING IN POROUS SILICON
Authors: ANDRIANOV AV BELYAKOV LV GORYACHEV DN KOVALEV DI SRESELI OM YAROSHETSKII ID AVERBUKH BY
Citation: Av. Andrianov et al., ENHANCED RAMAN-SCATTERING IN POROUS SILICON, Semiconductors, 28(12), 1994, pp. 1213-1215
LIGHT-SENSITIVE POROUS-SILICON SCHOTTKY STRUCTURES
Authors: BELYAKOV LV GORYACHEV DN SRESELI OM YAROSHETSKII ID
Citation: Lv. Belyakov et al., LIGHT-SENSITIVE POROUS-SILICON SCHOTTKY STRUCTURES, Semiconductors, 27(8), 1993, pp. 758-759
EFFICIENT ELECTROLUMINESCENCE OF POROUS SILICON
Authors: BELYAKOV LV GORYACHEV DN SRESELI OM YAROSHETSKII ID
Citation: Lv. Belyakov et al., EFFICIENT ELECTROLUMINESCENCE OF POROUS SILICON, Semiconductors, 27(11-12), 1993, pp. 999-1001
ROLE OF LIGHT IN THE FORMATION OF POROUS SILICON ON P-TYPE SUBSTRATES
Authors: BELYAKOV LV GORYACHEV DN SRESELI OM YAROSHETSKII ID
Citation: Lv. Belyakov et al., ROLE OF LIGHT IN THE FORMATION OF POROUS SILICON ON P-TYPE SUBSTRATES, Semiconductors, 27(11-12), 1993, pp. 1078-1080
SELECTIVE PHOTORECEIVERS BASED ON SCHOTTKY DIODES WITH PERIODICALLY PROFILED SURFACE
Authors: BELYAKOV LV GORYAYEV DN RUMYANTSEV BL SRESELI OM YAROSHETSKIY NID
Citation: Lv. Belyakov et al., SELECTIVE PHOTORECEIVERS BASED ON SCHOTTKY DIODES WITH PERIODICALLY PROFILED SURFACE, Telecommunications & radio engineering, 47(10), 1992, pp. 14-17
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