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Results: 1-17 |
Results: 17
ANALYSIS OF CAPACITANCE-RELAXATION SIGNALS CONSISTING OF SEVERAL EXPONENTIALS
Authors: BERMAN LS
Citation: Ls. Berman, ANALYSIS OF CAPACITANCE-RELAXATION SIGNALS CONSISTING OF SEVERAL EXPONENTIALS, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 617-618
CAPACITIVE METHODS OF SEMICONDUCTOR PURITY CONTROL
Authors: BERMAN LS
Citation: Ls. Berman, CAPACITIVE METHODS OF SEMICONDUCTOR PURITY CONTROL, Semiconductors, 31(6), 1997, pp. 649-649
ANALYSIS OF THE TEMPORAL INSTABILITY OF THE PARAMETERS OF AN INSULATOR III-V COMPOUND BY THE ISOTHERMAL CAPACITANCE RELAXATION METHOD/
Authors: BERMAN LS
Citation: Ls. Berman, ANALYSIS OF THE TEMPORAL INSTABILITY OF THE PARAMETERS OF AN INSULATOR III-V COMPOUND BY THE ISOTHERMAL CAPACITANCE RELAXATION METHOD/, Semiconductors, 31(1), 1997, pp. 63-66
DEPTH DISTRIBUTION OF DEEP-LEVEL CENTERS IN SILICON DIOXIDE NEAR AN INTERFACE WITH INDIUM-PHOSPHIDE
Authors: BERMAN LS
Citation: Ls. Berman, DEPTH DISTRIBUTION OF DEEP-LEVEL CENTERS IN SILICON DIOXIDE NEAR AN INTERFACE WITH INDIUM-PHOSPHIDE, Semiconductors, 31(1), 1997, pp. 67-68
INTRAMUSCULAR ATROPINE SULFATE IN CHILDREN - COMPARISON OF INJECTION SITES
Authors: SULLIVAN KJ BERMAN LS KOSKA J GOODWIN SR SETZER N WHITE SE GRAVES SA NALL AV
Citation: Kj. Sullivan et al., INTRAMUSCULAR ATROPINE SULFATE IN CHILDREN - COMPARISON OF INJECTION SITES, Anesthesia and analgesia, 84(1), 1997, pp. 54-58
RECOMBINATION PROPERTIES OF DIRECTLY BOUN DED SILICON STRUCTURES WITHREGULAR RELIEF ON THE INTERFACE
Authors: GREKHOV IV BERMAN LS ARGUNOVA TS KOSTINA LS BELYAKOVA EI KUDRYAVTSEVA TV KIM ED KIM SC PAK DM
Citation: Iv. Grekhov et al., RECOMBINATION PROPERTIES OF DIRECTLY BOUN DED SILICON STRUCTURES WITHREGULAR RELIEF ON THE INTERFACE, Pis'ma v Zurnal tehniceskoj fiziki, 22(23), 1996, pp. 14-18
TIME DRIFT OF PARAMETERS OF INDIUM PHOSPH IDE-SILICON DIOXIDE INTERFACE
Authors: BERMAN LS GABARAEVA AD KAMANIN AV KARIMOV I KLYACHKIN LE SHARONOVA LV SHMIDT NM
Citation: Ls. Berman et al., TIME DRIFT OF PARAMETERS OF INDIUM PHOSPH IDE-SILICON DIOXIDE INTERFACE, Pis'ma v Zurnal tehniceskoj fiziki, 22(2), 1996, pp. 65-69
ASSOCIATION OF TIME INSTABILITY OF THE INP-SIO2 INTERFACE CHARACTERISTICS WITH BULK PROPERTIES OF THE INSULATOR
Authors: BERMAN LS DENISOV DV GABARAEVA AD KAMANIN AV KARIMOV I SHARONOVA LV SHMIDT NM SMOLSKY OV
Citation: Ls. Berman et al., ASSOCIATION OF TIME INSTABILITY OF THE INP-SIO2 INTERFACE CHARACTERISTICS WITH BULK PROPERTIES OF THE INSULATOR, Semiconductor science and technology, 11(11), 1996, pp. 1688-1691
ARTIFICIAL SURFACTANT FOR THERAPY IN HYDROCARBON-INDUCED LUNG INJURY IN SHEEP
Authors: WIDNER LR GOODWIN SR BERMAN LS BANNER MJ FREID EB MCKEE TW
Citation: Lr. Widner et al., ARTIFICIAL SURFACTANT FOR THERAPY IN HYDROCARBON-INDUCED LUNG INJURY IN SHEEP, Critical care medicine, 24(9), 1996, pp. 1524-1529
VARIATION OF THE PROPERTIES OF THE CENTERS WHICH FORM DEEP LEVELS IN CALCIUM-FLUORIDE GROWN ON SILICON WITH THE CONDITIONS OF MOLECULAR-BEAM EPITAXY
Authors: ALVAREZ J BERMAN LS KARIMOV IN
Citation: J. Alvarez et al., VARIATION OF THE PROPERTIES OF THE CENTERS WHICH FORM DEEP LEVELS IN CALCIUM-FLUORIDE GROWN ON SILICON WITH THE CONDITIONS OF MOLECULAR-BEAM EPITAXY, Semiconductors, 29(3), 1995, pp. 206-210
A NEW PEDIATRIC RESPIRATORY MONITOR THAT ACCURATELY MEASURES IMPOSED WORK OF BREATHING - A VALIDATION-STUDY
Authors: BERMAN LS BANNER MJ BLANCH PB WIDNER LR
Citation: Ls. Berman et al., A NEW PEDIATRIC RESPIRATORY MONITOR THAT ACCURATELY MEASURES IMPOSED WORK OF BREATHING - A VALIDATION-STUDY, Journal of clinical monitoring, 11(1), 1995, pp. 14-17
CAPACITANCE RELAXATION IN SILICON-(CALCIUM FLUORIDE)-GOLD METAL-INSULATOR-SEMICONDUCTOR TUNNEL-TRANSPARENT STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
Authors: ALVARES KK BERMAN LS KARIMOV IN
Citation: Kk. Alvares et al., CAPACITANCE RELAXATION IN SILICON-(CALCIUM FLUORIDE)-GOLD METAL-INSULATOR-SEMICONDUCTOR TUNNEL-TRANSPARENT STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(8), 1994, pp. 835-838
VOLTAGE-CAPACITANCE CHARACTERISTICS OF SILICON-(CALCIUM FLUORIDE)-GOLD MIS TUNNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
Authors: ALVARES KK BERMAN LS BOREVICH VA GREKHOV IV KARIMOV IN SOKOLOV NS SHULEKIN AF
Citation: Kk. Alvares et al., VOLTAGE-CAPACITANCE CHARACTERISTICS OF SILICON-(CALCIUM FLUORIDE)-GOLD MIS TUNNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(2), 1994, pp. 211-212
PROLONGED NEUROMUSCULAR BLOCKADE FOR RELAXATION IN 2 PEDIATRIC INTENSIVE-CARE PATIENTS
Authors: KOSKA J BERMAN LS
Citation: J. Koska et Ls. Berman, PROLONGED NEUROMUSCULAR BLOCKADE FOR RELAXATION IN 2 PEDIATRIC INTENSIVE-CARE PATIENTS, Journal of clinical anesthesia, 6(1), 1994, pp. 69-73
SURFACE-STATES ON SILICON IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURESWITH A TUNNEL-THIN OXIDE LAYER
Authors: BERMAN LS GREKHOV IV KARIMOV IN OSTROUMOVA EV
Citation: Ls. Berman et al., SURFACE-STATES ON SILICON IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURESWITH A TUNNEL-THIN OXIDE LAYER, Semiconductors, 27(6), 1993, pp. 497-500
RADIATION DEFECTS IN SILICON IRRADIATED WITH ALPHA-PARTICLES AT LOW-TEMPERATURES
Authors: BERMAN LS IVANOV AM PAVLOVA ML REMENYUK AD STROKAN NB
Citation: Ls. Berman et al., RADIATION DEFECTS IN SILICON IRRADIATED WITH ALPHA-PARTICLES AT LOW-TEMPERATURES, Semiconductors, 27(11-12), 1993, pp. 987-990
PARAMETERS OF FORCE SILICON DIODES IRRADI ATED WITH LOW-ENERGY ELECTRONS
Authors: ARINUSHKIN VN BERMAN LS GEIFMAN EM KONYUKHOV AV LOMASOV VN MNATSAKANOV TT REMENYUK AD
Citation: Vn. Arinushkin et al., PARAMETERS OF FORCE SILICON DIODES IRRADI ATED WITH LOW-ENERGY ELECTRONS, Zurnal tehniceskoj fiziki, 63(8), 1993, pp. 41-45
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