Citation: Ls. Berman, ANALYSIS OF CAPACITANCE-RELAXATION SIGNALS CONSISTING OF SEVERAL EXPONENTIALS, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 617-618
Citation: Ls. Berman, ANALYSIS OF THE TEMPORAL INSTABILITY OF THE PARAMETERS OF AN INSULATOR III-V COMPOUND BY THE ISOTHERMAL CAPACITANCE RELAXATION METHOD/, Semiconductors, 31(1), 1997, pp. 63-66
Citation: Ls. Berman, DEPTH DISTRIBUTION OF DEEP-LEVEL CENTERS IN SILICON DIOXIDE NEAR AN INTERFACE WITH INDIUM-PHOSPHIDE, Semiconductors, 31(1), 1997, pp. 67-68
Authors:
SULLIVAN KJ
BERMAN LS
KOSKA J
GOODWIN SR
SETZER N
WHITE SE
GRAVES SA
NALL AV
Citation: Kj. Sullivan et al., INTRAMUSCULAR ATROPINE SULFATE IN CHILDREN - COMPARISON OF INJECTION SITES, Anesthesia and analgesia, 84(1), 1997, pp. 54-58
Authors:
GREKHOV IV
BERMAN LS
ARGUNOVA TS
KOSTINA LS
BELYAKOVA EI
KUDRYAVTSEVA TV
KIM ED
KIM SC
PAK DM
Citation: Iv. Grekhov et al., RECOMBINATION PROPERTIES OF DIRECTLY BOUN DED SILICON STRUCTURES WITHREGULAR RELIEF ON THE INTERFACE, Pis'ma v Zurnal tehniceskoj fiziki, 22(23), 1996, pp. 14-18
Authors:
BERMAN LS
GABARAEVA AD
KAMANIN AV
KARIMOV I
KLYACHKIN LE
SHARONOVA LV
SHMIDT NM
Citation: Ls. Berman et al., TIME DRIFT OF PARAMETERS OF INDIUM PHOSPH IDE-SILICON DIOXIDE INTERFACE, Pis'ma v Zurnal tehniceskoj fiziki, 22(2), 1996, pp. 65-69
Authors:
BERMAN LS
DENISOV DV
GABARAEVA AD
KAMANIN AV
KARIMOV I
SHARONOVA LV
SHMIDT NM
SMOLSKY OV
Citation: Ls. Berman et al., ASSOCIATION OF TIME INSTABILITY OF THE INP-SIO2 INTERFACE CHARACTERISTICS WITH BULK PROPERTIES OF THE INSULATOR, Semiconductor science and technology, 11(11), 1996, pp. 1688-1691
Authors:
WIDNER LR
GOODWIN SR
BERMAN LS
BANNER MJ
FREID EB
MCKEE TW
Citation: Lr. Widner et al., ARTIFICIAL SURFACTANT FOR THERAPY IN HYDROCARBON-INDUCED LUNG INJURY IN SHEEP, Critical care medicine, 24(9), 1996, pp. 1524-1529
Citation: J. Alvarez et al., VARIATION OF THE PROPERTIES OF THE CENTERS WHICH FORM DEEP LEVELS IN CALCIUM-FLUORIDE GROWN ON SILICON WITH THE CONDITIONS OF MOLECULAR-BEAM EPITAXY, Semiconductors, 29(3), 1995, pp. 206-210
Citation: Ls. Berman et al., A NEW PEDIATRIC RESPIRATORY MONITOR THAT ACCURATELY MEASURES IMPOSED WORK OF BREATHING - A VALIDATION-STUDY, Journal of clinical monitoring, 11(1), 1995, pp. 14-17
Citation: Kk. Alvares et al., CAPACITANCE RELAXATION IN SILICON-(CALCIUM FLUORIDE)-GOLD METAL-INSULATOR-SEMICONDUCTOR TUNNEL-TRANSPARENT STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(8), 1994, pp. 835-838
Authors:
ALVARES KK
BERMAN LS
BOREVICH VA
GREKHOV IV
KARIMOV IN
SOKOLOV NS
SHULEKIN AF
Citation: Kk. Alvares et al., VOLTAGE-CAPACITANCE CHARACTERISTICS OF SILICON-(CALCIUM FLUORIDE)-GOLD MIS TUNNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(2), 1994, pp. 211-212
Citation: J. Koska et Ls. Berman, PROLONGED NEUROMUSCULAR BLOCKADE FOR RELAXATION IN 2 PEDIATRIC INTENSIVE-CARE PATIENTS, Journal of clinical anesthesia, 6(1), 1994, pp. 69-73
Authors:
BERMAN LS
GREKHOV IV
KARIMOV IN
OSTROUMOVA EV
Citation: Ls. Berman et al., SURFACE-STATES ON SILICON IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURESWITH A TUNNEL-THIN OXIDE LAYER, Semiconductors, 27(6), 1993, pp. 497-500
Authors:
BERMAN LS
IVANOV AM
PAVLOVA ML
REMENYUK AD
STROKAN NB
Citation: Ls. Berman et al., RADIATION DEFECTS IN SILICON IRRADIATED WITH ALPHA-PARTICLES AT LOW-TEMPERATURES, Semiconductors, 27(11-12), 1993, pp. 987-990
Authors:
ARINUSHKIN VN
BERMAN LS
GEIFMAN EM
KONYUKHOV AV
LOMASOV VN
MNATSAKANOV TT
REMENYUK AD
Citation: Vn. Arinushkin et al., PARAMETERS OF FORCE SILICON DIODES IRRADI ATED WITH LOW-ENERGY ELECTRONS, Zurnal tehniceskoj fiziki, 63(8), 1993, pp. 41-45