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Results: 1-25 | 26-33
Results: 1-25/33
LONG-RANGE STRUCTURAL INTERACTION EFFECT IN GALLIUM-ARSENIDE DURING ION-BOMBARDMENT
Authors: BERT NA SOSHNIKOV IP STEPANOVA MG
Citation: Na. Bert et al., LONG-RANGE STRUCTURAL INTERACTION EFFECT IN GALLIUM-ARSENIDE DURING ION-BOMBARDMENT, Physics of the solid state, 40(3), 1998, pp. 401-403
INDIUM LAYERS IN LOW-TEMPERATURE GALLIUM-ARSENIDE - STRUCTURE AND HOWIT CHANGES UNDER ANNEALING IN THE TEMPERATURE-RANGE 500-700-DEGREES-C
Authors: BERT NA SUVOROVA AA CHALDYSHEV VV MUSIKHIN YG PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR WERNER R
Citation: Na. Bert et al., INDIUM LAYERS IN LOW-TEMPERATURE GALLIUM-ARSENIDE - STRUCTURE AND HOWIT CHANGES UNDER ANNEALING IN THE TEMPERATURE-RANGE 500-700-DEGREES-C, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 683-688
SELF-ORGANIZING NANOHETEROSTRUCTURES IN INGAASP SOLID-SOLUTIONS
Authors: VAVILOVA LS IVANOVA AV KAPITONOV VA MURASHOVA AV TARASOV IS ARSENTEV IN BERT NA MUSIKHIN YG PIKHTIN NA FALEEV NN
Citation: Ls. Vavilova et al., SELF-ORGANIZING NANOHETEROSTRUCTURES IN INGAASP SOLID-SOLUTIONS, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 590-593
ARSENIC CLUSTER SUPERLATTICE IN GALLIUM-ARSENIDE GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
Authors: CHALDYSHEV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR BERT NA KUNITSYN AE MUSIKHIN YG TRETYAKOV VV WERNER P
Citation: Vv. Chaldyshev et al., ARSENIC CLUSTER SUPERLATTICE IN GALLIUM-ARSENIDE GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1036-1039
ACCUMULATION OF ELECTRONS IN GAAS-LAYERS GROWN AT LOW-TEMPERATURES AND CONTAINING ARSENIC CLUSTERS
Authors: BRUNKOV PN CHALDYSHEV VV BERT NA SUVOROVA AA KONNIKOV SG CHERNIGOVSKII AV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Pn. Brunkov et al., ACCUMULATION OF ELECTRONS IN GAAS-LAYERS GROWN AT LOW-TEMPERATURES AND CONTAINING ARSENIC CLUSTERS, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1044-1047
CAPACITANCE-VOLTAGE PROFILING OF AU N-GAAS SCHOTTKY-BARRIER STRUCTURES CONTAINING A LAYER OF SELF-ORGANIZED INAS QUANTUM DOTS/
Authors: BRUNKOV PN SUVOROVA AA BERT NA KOVSH AR ZHUKOV AE EGOROV AY USTINOV VM TSATSULNIKOV AF LEDENTSOV NN KOPEV PS KONNIKOV SG EAVES L MAIN PS
Citation: Pn. Brunkov et al., CAPACITANCE-VOLTAGE PROFILING OF AU N-GAAS SCHOTTKY-BARRIER STRUCTURES CONTAINING A LAYER OF SELF-ORGANIZED INAS QUANTUM DOTS/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1096-1100
LATERAL ASSOCIATION OF VERTICALLY-COUPLED QUANTUM DOTS
Authors: TSATSULNIKOV AF BELOUSOV MV BERT NA EGOROV AY KOPEV PS KOVSH AR KRESTNIKOV IL LEDENTSOV NN MAXIMOV MV SUVOROVA AA USTINOV VM VOLOVIK BV ZHUKOV AE GRUNDMANN M BIMBERG D ALFEROV ZI
Citation: Af. Tsatsulnikov et al., LATERAL ASSOCIATION OF VERTICALLY-COUPLED QUANTUM DOTS, Microelectronic engineering, 43-4, 1998, pp. 37-43
BISTABILITY OF CHARGE ACCUMULATED IN LOW-TEMPERATURE-GROWN GAAS
Authors: BROUNKOV PN CHALDYSHEV VV SUVOROVA AA BERT NA KONNIKOV SG CHERNIGOVSKII AV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Pn. Brounkov et al., BISTABILITY OF CHARGE ACCUMULATED IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 73(19), 1998, pp. 2796-2798
LATERAL ASSOCIATION OF VERTICALLY COUPLED QUANTUM DOTS
Authors: TSATSULNIKOV AF EGOROV AY ZHUKOV AE KOVSH AR USTINOV VM LEDENTSOV NN MAKSIMOV MV VOLOVIK BV SUVOROVA AA BERT NA KOPEV PS
Citation: Af. Tsatsulnikov et al., LATERAL ASSOCIATION OF VERTICALLY COUPLED QUANTUM DOTS, Semiconductors, 31(7), 1997, pp. 722-725
PHOTOLUMINESCENCE OF INSB QUANTUM DOTS IN GAAS AND GASB MATRICES
Authors: TSATSULNIKOV AF LEDENTSOV NN MAKSIMOV MV MELTSER BY NEKLYUDOV PV SHAPOSHNIKOV SV VOLOVIK BV KRESTNIKOV IL SAKHAROV AV BERT NA KOPEV PS ALFEROV ZI BIMBERG D
Citation: Af. Tsatsulnikov et al., PHOTOLUMINESCENCE OF INSB QUANTUM DOTS IN GAAS AND GASB MATRICES, Semiconductors, 31(1), 1997, pp. 55-57
OSTWALD RIPENING IN 2-DIMENSIONAL AND 3-DIMENSIONAL SYSTEMS OF AS CLUSTERS IN LOW-TEMPERATURE-GROWN GAAS FILMS
Authors: CHALDYSHEV VV BERT NA PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Vv. Chaldyshev et al., OSTWALD RIPENING IN 2-DIMENSIONAL AND 3-DIMENSIONAL SYSTEMS OF AS CLUSTERS IN LOW-TEMPERATURE-GROWN GAAS FILMS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 238(1), 1997, pp. 148-151
MECHANISMS OF CATION DEFECT FORMATION IN EPITAXIAL YBA2CU3O7-X FILMS
Authors: BERT NA LUNEV AV MUSIKHIN YG SURIS RA TRETYAKOV VV BOBYL AV KARMANENKO SF DEDOBOREZ AI
Citation: Na. Bert et al., MECHANISMS OF CATION DEFECT FORMATION IN EPITAXIAL YBA2CU3O7-X FILMS, Physica. C, Superconductivity, 280(3), 1997, pp. 121-136
PHOTONIC BAND-STRUCTURE OF 3D ORDERED SILICA MATRICES
Authors: ASTRATOV VN VLASOV YA KARIMOV OZ KAPLYANSKII AA MUSIKHIN YG BERT NA BOGOMOLOV VN PROKOFIEV AV
Citation: Vn. Astratov et al., PHOTONIC BAND-STRUCTURE OF 3D ORDERED SILICA MATRICES, Superlattices and microstructures, 22(3), 1997, pp. 393-397
2-DIMENSIONAL PRECIPITATION OF AS CLUSTERS DUE TO INDIUM DELTA-DOPINGOF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: BERT NA CHALDYSHEV VV FALEEV NN KUNITSYN AE LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR TRETYAKOV VV
Citation: Na. Bert et al., 2-DIMENSIONAL PRECIPITATION OF AS CLUSTERS DUE TO INDIUM DELTA-DOPINGOF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductor science and technology, 12(1), 1997, pp. 51-54
X-RAY-INDUCED ELECTRON-EMISSION STUDY OF GAAS NEAR-SURFACE REGION COMPOSITION DAMAGE CAUSED BY AR-BOMBARDMENT( ION)
Authors: POGREBITSKY KJ SOSHNIKOV IP YUREV YN BERT NA KONNIKOV SG
Citation: Kj. Pogrebitsky et al., X-RAY-INDUCED ELECTRON-EMISSION STUDY OF GAAS NEAR-SURFACE REGION COMPOSITION DAMAGE CAUSED BY AR-BOMBARDMENT( ION), PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 7, 1997, pp. 27-34
SPUTTERING OF III-V SEMICONDUCTORS UNDER ARGON ATOM AND ION-BOMBARDMENT
Authors: SOSHNIKOV IP KUDRIAVTSEV YA LUNEV AV BERT NA
Citation: Ip. Soshnikov et al., SPUTTERING OF III-V SEMICONDUCTORS UNDER ARGON ATOM AND ION-BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 115-118
LOW-THRESHOLD INJECTION-LASERS BASED ON VERTICALLY COUPLED QUANTUM DOTS
Authors: USTINOV VM EGOROV AY KOVSH AR ZHUKOV AE MAXIMOV MV TSATSULNIKOV AF GORDEEV NY ZAITSEV SV SHERNYAKOV YM BERT NA KOPEV PS ALFEROV ZI LEDENTSOV NN BOHRER J BIMBERG D KOSOGOV AO WERNER P GOSELE U
Citation: Vm. Ustinov et al., LOW-THRESHOLD INJECTION-LASERS BASED ON VERTICALLY COUPLED QUANTUM DOTS, Journal of crystal growth, 175, 1997, pp. 689-695
ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING
Authors: BERT NA CHALDYSHEV VV KUNITSYN AE MUSIKHIN YG FALEEV NN TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Na. Bert et al., ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING, Applied physics letters, 70(23), 1997, pp. 3146-3148
FORMATION OF VERTICALLY ALIGNED ARRAYS OF STRAINED INAS QUANTUM DOTS IN A GAAS(100) MATRIX
Authors: EGOROV AY ZHUKOV AE KOPEV PS LEDENTSOV NN MAKSIMOV MV USTINOV VM TSATSULNIKOV AF BERT NA KOSOGOV AO ALFEROV ZI BIMBERG D
Citation: Ay. Egorov et al., FORMATION OF VERTICALLY ALIGNED ARRAYS OF STRAINED INAS QUANTUM DOTS IN A GAAS(100) MATRIX, Semiconductors, 30(9), 1996, pp. 879-883
AN INJECTION HETEROJUNCTION LASER-BASED ON ARRAYS OF VERTICALLY COUPLED INAS QUANTUM DOTS IN A GAAS MATRIX
Authors: ALFEROV ZI BERT NA EGOROV AY ZHUKOV AE KOPEV PS KOSOGOV AO KRESTNIKOV IL LEDENTSOV NN LUNEV AV MAKSIMOV MV SAKHAROV AV USTINOV VM TSAPULNIKOV AF SHERNYAKOV YM BIMBERG D
Citation: Zi. Alferov et al., AN INJECTION HETEROJUNCTION LASER-BASED ON ARRAYS OF VERTICALLY COUPLED INAS QUANTUM DOTS IN A GAAS MATRIX, Semiconductors, 30(2), 1996, pp. 194-196
PHOTOLUMINESCENCE OF ARRAYS OF VERTICALLY COUPLED, STRESSED INAS QUANTUM DOTS IN A GAAS(100) MATRIX
Authors: TSATSULNIKOV AF LEDENTSOV NN MAKSIMOV MV EGOROV AY ZHUKOV AE USTINOV VM VOLOVIK BV KRESTNIKOV IL KOVSH AR SAKHAROV AV BERT NA KOPEV PS ALFEROV ZI
Citation: Af. Tsatsulnikov et al., PHOTOLUMINESCENCE OF ARRAYS OF VERTICALLY COUPLED, STRESSED INAS QUANTUM DOTS IN A GAAS(100) MATRIX, Semiconductors, 30(10), 1996, pp. 953-958
CHANGES IN THE MOIRE PATTERNS IN ELECTRON-MICROSCOPE IMAGES OF AS CLUSTERS IN LT-GAAS AS THEIR SIZE DECREASES
Authors: BERT NA CHALDYSHEV VV
Citation: Na. Bert et Vv. Chaldyshev, CHANGES IN THE MOIRE PATTERNS IN ELECTRON-MICROSCOPE IMAGES OF AS CLUSTERS IN LT-GAAS AS THEIR SIZE DECREASES, Semiconductors, 30(10), 1996, pp. 988-989
PHOTONIC BAND-GAPS IN 3D ORDERED FCC SILICA MATRICES
Authors: ASTRATOV VN VLASOV YA KARIMOV OZ KAPLYANSKII AA MUSIKHIN YG BERT NA BOGOMOLOV VN PROKOFIEV AV
Citation: Vn. Astratov et al., PHOTONIC BAND-GAPS IN 3D ORDERED FCC SILICA MATRICES, Physics letters. A, 222(5), 1996, pp. 349-353
EFFECT OF VOLUME COUPLING ON THE VALUE OF THRESHOLD ENERGIES OF CASCADES OF SOLID STATES SPUTTERING
Authors: SOSHNIKOV IP BERT NA
Citation: Ip. Soshnikov et Na. Bert, EFFECT OF VOLUME COUPLING ON THE VALUE OF THRESHOLD ENERGIES OF CASCADES OF SOLID STATES SPUTTERING, Zurnal tehniceskoj fiziki, 66(6), 1996, pp. 84-92
STRUCTURAL AND OPTICAL-PROPERTIES OF INAS-GAAS QUANTUM DOTS SUBJECTEDTO HIGH-TEMPERATURE ANNEALING
Authors: KOSOGOV AO WERNER P GOSELE U LEDENTSOV NN BIMBERG D USTINOV VM EGOROV AY ZHUKOV AE KOPEV PS BERT NA ALFEROV ZI
Citation: Ao. Kosogov et al., STRUCTURAL AND OPTICAL-PROPERTIES OF INAS-GAAS QUANTUM DOTS SUBJECTEDTO HIGH-TEMPERATURE ANNEALING, Applied physics letters, 69(20), 1996, pp. 3072-3074
Risultati: 1-25 | 26-33