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Results:
1-14
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Results: 14
Authors:
BESHKOV G
KRASTEV V
VELCHEV N
MARINOVA T
Citation: G. Beshkov et al., XPS STUDY OF PLASMA-TREATED CARBON LAYERS DEPOSITED ON POROUS SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 1-4
Authors:
BESHKOV G
DIMITROV DB
GEORGIEV S
PETROV P
ZAMBOV L
IVANOV B
POPOV C
GEORGIEV M
Citation: G. Beshkov et al., THIN CNX FILMS PREPARED BY VACUUM RAPID THERMAL ANNEALING, Vacuum, 51(2), 1998, pp. 169-172
Authors:
SPASSOV L
LAZAROVA V
BESHKOV G
VERGOV L
ANGELOV T
Citation: L. Spassov et al., INFLUENCE OF VACUUM RAPID THERMAL ANNEALING ON SOME PROPERTIES OF QUARTZ RESONATORS, Vacuum, 51(2), 1998, pp. 173-175
Authors:
BESHKOV G
DIMITROV DB
KOPRINAROVA J
GESHEVA K
Citation: G. Beshkov et al., PROPERTIES OF PALLADIUM SILICIDE THIN-FILMS OBTAINED BY VACUUM RAPID THERMAL ANNEALING OF RF-SPUTTERED PD FILMS ON SI, Vacuum, 51(2), 1998, pp. 177-180
Authors:
SZEKERES A
GARTNER M
VASILIU F
MARINOV M
BESHKOV G
Citation: A. Szekeres et al., CRYSTALLIZATION OF A-SI-H FILMS BY RAPID THERMAL ANNEALING, Journal of non-crystalline solids, 230, 1998, pp. 954-957
Authors:
BESHKOV G
VELCHEV N
TZENOV N
MILENOV T
LAZAROVA V
Citation: G. Beshkov et al., EFFECT OF RAPID THERMAL ANNEALING ON THE PROPERTIES OF THIN CARBON-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 25-28
Authors:
LASAROVA V
BESHKOV G
SPASSOV L
Citation: V. Lasarova et al., INFLUENCE OF VACUUM RAPID THERMAL ANNEALING ON THE PROPERTIES OF AL AND AG FILMS ON QUARTZ, Vacuum, 47(11), 1996, pp. 1329-1331
Authors:
BESHKOV G
DIMITROV D
GEORGIEV S
DIMITROVA T
Citation: G. Beshkov et al., DEPOSITION AND PROPERTIES OF THIN PECVD CARBON-FILMS AFTER RAPID THERMAL ANNEALING, Journal de physique. IV, 5(C5), 1995, pp. 615-619
Authors:
BESHKOV G
KOLENTSOV K
YOURUKOVA L
RACHKOVA A
MATEEVA D
Citation: G. Beshkov et al., INFLUENCE OF RAPID THERMAL ANNEALING ON THE PROPERTIES OF SNO2 THIN-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 30(1), 1995, pp. 1-5
Authors:
PASKALEVA A
ATANASSOVA E
BESHKOV G
Citation: A. Paskaleva et al., THE EFFECT OF RAPID THERMAL ANNEALING IN VACUUM ON THE PROPERTIES OF THIN SIO2-FILMS, Journal of physics. D, Applied physics, 28(5), 1995, pp. 906-913
Authors:
PASKALEVA A
ATANASSOVA E
BESHKOV G
Citation: A. Paskaleva et al., RAPID THERMAL ANNEALING OF SIO2 FOR VLSI APPLICATIONS, Journal of non-crystalline solids, 187, 1995, pp. 35-39
Authors:
BESHKOV G
LAZAROVA V
DIMITROV DB
Citation: G. Beshkov et al., MORPHOLOGY OF LPCVD SI3N4 FILMS AFTER HIGH-TEMPERATURE TREATMENT AND HF ETCHING, Journal of non-crystalline solids, 187, 1995, pp. 301-307
Authors:
DIMITROVA T
ATANASSOVA E
BESHKOV G
PAZOV J
Citation: T. Dimitrova et al., THIN THERMAL SIO2 AFTER NH3 OR N2O PLASMA ACTION UNDER PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION CONDITIONS, Thin solid films, 252(2), 1994, pp. 89-97
Authors:
BESHKOV G
DIMITROV DB
GESHEVA K
BAKARDJIEVA V
Citation: G. Beshkov et al., PROPERTIES OF MU-PCVD POLYSILICON FILMS AFTER RAPID THERMAL ANNEALING, Journal de physique. IV, 3(C3), 1993, pp. 493-497
Risultati:
1-14
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