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Results: 101-125/129
Authors:
AGARWALA S
ADESIDA I
CANEAU C
BHAT R
Citation: S. Agarwala et al., CHARACTERISTICS OF SELECTIVE REACTIVE ION ETCHING OF INGAAS INALAS HETEROSTRUCTURES USING HBR PLASMA/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2258-2261
Authors:
PENNINGS ECM
DERI RJ
BHAT R
HAYES TR
ANDREADAKIS NC
Citation: Ecm. Pennings et al., ULTRACOMPACT, ALL-PASSIVE OPTICAL 90-DEGREES-HYBRID ON INP USING SELF-IMAGING, IEEE photonics technology letters, 5(6), 1993, pp. 701-703
Authors:
SEO JW
CANEAU C
BHAT R
ADESIDA I
Citation: Jw. Seo et al., APPLICATION OF INDIUM-TIN-OXIDE WITH IMPROVED TRANSMITTANCE AT 1.3-MU-M FOR MSM PHOTODETECTORS, IEEE photonics technology letters, 5(11), 1993, pp. 1313-1315
Authors:
KAMIYA I
ASPNES DE
TANAKA H
FLOREZ LT
KOZA MA
BHAT R
HARBISON JP
Citation: I. Kamiya et al., SURFACE RECONSTRUCTION OF GAAS (001) DURING OMCVD GROWTH, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 344(1673), 1993, pp. 443-452
Authors:
AGARWALA S
NUMMILA K
ADESIDA I
CANEAU C
BHAT R
Citation: S. Agarwala et al., INALAS INGAAS HETEROSTRUCTURE FETS PROCESSED WITH SELECTIVE REACTIVE-ION-ETCHING GATE-RECESS TECHNOLOGY/, IEEE electron device letters, 14(9), 1993, pp. 425-427
Authors:
LO YH
WANG LA
GOZDZ AS
LIN PSD
IQBAL MZ
BHAT R
LEE TP
Citation: Yh. Lo et al., 4-CHANNEL INTEGRATED DFB LASER ARRAY WITH TUNABLE WAVELENGTH SPACING AND 40-GB S SIGNAL TRANSMISSION CAPACITY/, Journal of lightwave technology, 11(4), 1993, pp. 619-623
Authors:
WIELBO D
BHAT R
CHARI G
VIDYASAGAR D
TEBBETT IR
GULATI A
Citation: D. Wielbo et al., HIGH-PERFORMANCE LIQUID-CHROMATOGRAPHIC DETERMINATION OF MORPHINE ANDITS METABOLITES IN PLASMA USING DIODE-ARRAY DETECTION, Journal of chromatography. Biomedical applications, 615(1), 1993, pp. 164-168
Authors:
NASEEM I
AHMED MS
BHAT R
HADI SM
Citation: I. Naseem et al., CU(II)-DEPENDENT DEGRADATION OF DNA BY RIBOFLAVIN, Food and chemical toxicology, 31(8), 1993, pp. 589-597
Authors:
BHAT R
Citation: R. Bhat, NONPLANAR AND MASKED-AREA EPITAXY BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Semiconductor science and technology, 8(6), 1993, pp. 984-993
Authors:
BHAT R
Citation: R. Bhat, THE PRIVATE PUBLIC MIX IN HEALTH-CARE IN INDIA (VOL 8, PG 43, 1993), Health policy and planning, 8(2), 1993, pp. 189-189
Authors:
CHANDA PK
MINCHIN MCW
DAVIS AR
GREENBERG L
REILLY Y
MCGREGOR WH
BHAT R
LUBECK MD
MIZUTANI S
HUNG PP
Citation: Pk. Chanda et al., IDENTIFICATION OF RESIDUES IMPORTANT FOR LIGAND-BINDING TO THE HUMAN 5-HYDROXYTRYPTAMINE-1A SEROTONIN RECEPTOR, Molecular pharmacology, 43(4), 1993, pp. 516-520
Authors:
BHAT R
PATI V
SUNDER VS
Citation: R. Bhat et al., ON SOME CONVEX-SETS AND THEIR EXTREME-POINTS, Mathematische Annalen, 296(4), 1993, pp. 637-648
Authors:
CANEAU C
BHAT R
CHANG CC
KASH K
KOZA MA
Citation: C. Caneau et al., SELECTIVE ORGANOMETALLIC VAPOR-PHASE EPITAXY OF GA AND IN COMPOUNDS -A COMPARISON OF TMIN AND TEGA VERSUS TMIN AND TMGA, Journal of crystal growth, 132(3-4), 1993, pp. 364-370
Authors:
KASTALSKY A
BHAT R
CHO AY
SIVCO DL
Citation: A. Kastalsky et al., NEW TRANSPORT PHENOMENA IN A BALLISTIC HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR, Journal of applied physics, 74(8), 1993, pp. 5259-5262
Authors:
SONG JI
HONG WP
BHAT R
CHOUGH KB
HAYES JR
SUGENG B
WEI CJ
HWANG JCM
Citation: Ji. Song et al., MICROWAVE-POWER INP INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, Electronics Letters, 29(8), 1993, pp. 724-725
CAVITY LENGTH DEPENDENCE OF K-LIMITED BANDWIDTH IN 1.6-MU-M COMPRESSIVE-STRAINED QUANTUM-WELL LASERS
Authors:
WU TC
KAN SC
VASSILOVSKI D
LAU KY
ZAH CE
PATHAK B
BHAT R
LEE TP
Citation: Tc. Wu et al., CAVITY LENGTH DEPENDENCE OF K-LIMITED BANDWIDTH IN 1.6-MU-M COMPRESSIVE-STRAINED QUANTUM-WELL LASERS, Electronics Letters, 29(5), 1993, pp. 449-450
Authors:
NUMMILA K
TONG M
KETTERSON A
ADESIDA I
CANEAU C
BHAT R
Citation: K. Nummila et al., MOVPE-GROWN INALAS INGAAS/INP MODFETS WITH VERY HIGH F(T)/, Electronics Letters, 29(3), 1993, pp. 274-275
Authors:
BALLEGEER DG
NUMMILA K
ADESIDA I
CANEAU C
BHAT R
Citation: Dg. Ballegeer et al., 0.32-MU-M GATE LENGTH INP-CHANNEL MODFETS WITH FT ABOVE 90 GHZ, Electronics Letters, 29(15), 1993, pp. 1375-1377
Authors:
ZAH CE
DELFYETT PJ
BHAT R
CANEAU C
FAVIRE F
PATHAK B
LIN PSD
GOZDZ AS
ANDREADAKIS NC
KOZA MA
IQBAL MZ
IZADPANAH H
LEE TP
Citation: Ce. Zah et al., HIGH-SPEED PERFORMANCE OF 1.5-MU-M COMPRESSIVE-STRAINED MULTI-QUANTUM-WELL GAIN-COUPLED DISTRIBUTED-FEEDBACK LASERS, Electronics Letters, 29(10), 1993, pp. 857-859
Authors:
CHANGHASNAIN CJ
BHAT R
LEBLANC H
KOZA MA
Citation: Cj. Changhasnain et al., LOW-THRESHOLD 0.98-MU-M ALUMINUM-FREE STRAINED-QUANTUM-WELL INGAAS INGAASP/INGAP LASERS/, Electronics Letters, 29(1), 1993, pp. 1-2
Authors:
GULATI A
BHAT R
Citation: A. Gulati et R. Bhat, CHANGES IN THE ENTRY OF MORPHINE IN THE CENTRAL-NERVOUS-SYSTEM OF PIGLETS DURING DEVELOPMENT, Clinical research, 41(3), 1993, pp. 10000625-10000625
Authors:
IYER R
REBELLO S
SINGH G
GULATI A
BHAT R
VIDYASAGAR D
Citation: R. Iyer et al., CONCENTRATION OF ENDOTHELIN IN THE CENTRAL-NERVOUS-SYSTEM OF HYPERTENSIVE RATS DURING DEVELOPMENT, Clinical research, 41(3), 1993, pp. 10000650-10000650
STRUCTURE OF (001) GAAS-SURFACES DURING EPITAXIAL-GROWTH BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION
Authors:
KAMIYA I
TANAKA H
ASPNES DE
KOZA M
BHAT R
Citation: I. Kamiya et al., STRUCTURE OF (001) GAAS-SURFACES DURING EPITAXIAL-GROWTH BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 63(23), 1993, pp. 3206-3208
Authors:
VAIL EC
LIM SF
WU YA
FRANCIS DA
CHANGHASNAIN CJ
BHAT R
CANEAU C
Citation: Ec. Vail et al., BURIED HETEROSTRUCTURE 0.98 MU-M INGAAS INGAASP/INGAP LASERS/, Applied physics letters, 63(16), 1993, pp. 2183-2185
Authors:
MASLAR JE
DORSTEN JF
BOHN PW
AGARWALA S
ADESIDA I
CANEAU C
BHAT R
Citation: Je. Maslar et al., PHONON-ELECTRON INTERACTIONS IN THE 2-DIMENSIONAL ELECTRON-GAS IN INGAAS-INALAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES STUDIEDBY RAMAN-SCATTERING, Applied physics letters, 63(14), 1993, pp. 1909-1911