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Results: 1-18 |
Results: 18
SELECTIVE SI AND SIGE EPITAXIAL HETEROSTRUCTURES GROWN USING AN INDUSTRIAL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION MODULE
Authors: BODNAR S DEBERRANGER E BOUILLON P MOUIS M SKOTNICKI T REGOLINI JL
Citation: S. Bodnar et al., SELECTIVE SI AND SIGE EPITAXIAL HETEROSTRUCTURES GROWN USING AN INDUSTRIAL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION MODULE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 712-718
WHAT IS THE ROLE OF THE METAL ON THE FERMI-LEVEL POSITION AT THE INTERFACE WITH IV-IV COMPOUNDS
Authors: AUBRYFORTUNA V PERROSSIER JL MAMOR M MEYER F FROJDH C THUNGSTROM G PETERSSON CS BODNAR S REGOLINI JL
Citation: V. Aubryfortuna et al., WHAT IS THE ROLE OF THE METAL ON THE FERMI-LEVEL POSITION AT THE INTERFACE WITH IV-IV COMPOUNDS, Microelectronic engineering, 37-8(1-4), 1997, pp. 573-579
SINGLE-WAFER SI AND SIGE PROCESSES FOR ADVANCED ULSI TECHNOLOGIES
Authors: BODNAR S MORIN C REGOLINI JL
Citation: S. Bodnar et al., SINGLE-WAFER SI AND SIGE PROCESSES FOR ADVANCED ULSI TECHNOLOGIES, Thin solid films, 294(1-2), 1997, pp. 11-14
LOCAL STRAINS IN SI1-X-YGEXCY ALLOYS AS DEDUCED FROM VIBRATIONAL FREQUENCIES
Authors: FINKMAN E RUCKER H MEYER F PRAWER SD BOUCHIER D BOULMER J BODNAR S REGOLINI JL
Citation: E. Finkman et al., LOCAL STRAINS IN SI1-X-YGEXCY ALLOYS AS DEDUCED FROM VIBRATIONAL FREQUENCIES, Thin solid films, 294(1-2), 1997, pp. 118-121
FERMI-LEVEL PINNING IN SCHOTTKY DIODES ON IV-IV-SEMICONDUCTORS - EFFECT OF GE-INCORPORATION AND C-INCORPORATION
Authors: MAMOR M PERROSSIER JL AUBRYFORTUNA V MEYER F BOUCHIER D BODNAR S REGOLINI JL
Citation: M. Mamor et al., FERMI-LEVEL PINNING IN SCHOTTKY DIODES ON IV-IV-SEMICONDUCTORS - EFFECT OF GE-INCORPORATION AND C-INCORPORATION, Thin solid films, 294(1-2), 1997, pp. 141-144
INTEGRATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS IN A 200 MM INDUSTRIAL BICMOS TECHNOLOGY
Authors: DEBERRANGER E BODNAR S CHANTRE A KIRTSCH J MONROY A GRANIER A LAURENS M REGOLINI JL MOUIS M
Citation: E. Deberranger et al., INTEGRATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS IN A 200 MM INDUSTRIAL BICMOS TECHNOLOGY, Thin solid films, 294(1-2), 1997, pp. 250-253
STRUCTURAL PARTICULARITIES OF CARBON-INCORPORATED SI-GE HETEROSTRUCTURES
Authors: GUEDJ C BOUCHIER D BOUCAUD P HINCELIN G PORTIER X LHOIR A BODNAR S REGOLINI JL
Citation: C. Guedj et al., STRUCTURAL PARTICULARITIES OF CARBON-INCORPORATED SI-GE HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 286-290
SCHOTTKY-BARRIER HEIGHTS ON IV-IV COMPOUND SEMICONDUCTORS
Authors: MEYER F MAMOR M AUBRYFORTUNA V WARREN P BODNAR S DUTARTRE D REGOLINI JL
Citation: F. Meyer et al., SCHOTTKY-BARRIER HEIGHTS ON IV-IV COMPOUND SEMICONDUCTORS, Journal of electronic materials, 25(11), 1996, pp. 1748-1753
SCHOTTKY DIODES ON SI1-X-YGEXCY ALLOYS - EFFECT OF THE C-INCORPORATION
Authors: MAMOR M MEYER F BOUCHIER D VIALARET G FINKMAN E BODNAR S REGOLINI JL
Citation: M. Mamor et al., SCHOTTKY DIODES ON SI1-X-YGEXCY ALLOYS - EFFECT OF THE C-INCORPORATION, Applied surface science, 102, 1996, pp. 134-137
SELECTIVE EPITAXIAL SI BASED LAYERS AND TISI2 DEPOSITION BY INTEGRATED CHEMICAL-VAPOR-DEPOSITION
Authors: REGOLINI JL MARGAIL J BODNAR S MAURY D MORIN C
Citation: Jl. Regolini et al., SELECTIVE EPITAXIAL SI BASED LAYERS AND TISI2 DEPOSITION BY INTEGRATED CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 101, 1996, pp. 566-574
GROWTH OF SI1-X-YGEXCY MULTIQUANTUM WELLS - STRUCTURAL AND OPTICAL-PROPERTIES
Authors: BOUCAUD P GUEDJ C JULIEN FH FINKMAN E BODNAR S REGOLINI JL
Citation: P. Boucaud et al., GROWTH OF SI1-X-YGEXCY MULTIQUANTUM WELLS - STRUCTURAL AND OPTICAL-PROPERTIES, Thin solid films, 278(1-2), 1996, pp. 114-117
GROWTH OF TERNARY ALLOY SI1-X-YGEXCY BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: BODNAR S REGOLINI JL
Citation: S. Bodnar et Jl. Regolini, GROWTH OF TERNARY ALLOY SI1-X-YGEXCY BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(5), 1995, pp. 2336-2340
TUNABLE INFRARED PHOTOEMISSION SENSOR ON SILICON USING SIGE SI EPITAXIAL HETEROSTRUCTURES/
Authors: RENARD C BODNAR S BADOZ PA SAGNES I
Citation: C. Renard et al., TUNABLE INFRARED PHOTOEMISSION SENSOR ON SILICON USING SIGE SI EPITAXIAL HETEROSTRUCTURES/, Journal of crystal growth, 157(1-4), 1995, pp. 195-200
OPTICAL-PROPERTIES OF BULK AND MULTIQUANTUM-WELL SIGE-C HETEROSTRUCTURES
Authors: BOUCAUD P GUEDJ C BOUCHIER D JULIEN FH LOURTIOZ JM BODNAR S REGOLINI JL FINKMAN E
Citation: P. Boucaud et al., OPTICAL-PROPERTIES OF BULK AND MULTIQUANTUM-WELL SIGE-C HETEROSTRUCTURES, Journal of crystal growth, 157(1-4), 1995, pp. 410-413
PHOTOLUMINESCENCE OF STRAINED SI1-YCY ALLOYS GROWN AT LOW-TEMPERATURE
Authors: BOUCAUD P FRANCIS C LARRE A JULIEN FH LOURTIOZ JM BOUCHIER D BODNAR S REGOLINI JL
Citation: P. Boucaud et al., PHOTOLUMINESCENCE OF STRAINED SI1-YCY ALLOYS GROWN AT LOW-TEMPERATURE, Applied physics letters, 66(1), 1995, pp. 70-72
STRAIN COMPENSATED HETEROSTRUCTURES IN THE SI1-X-YGEXCY TERNARY-SYSTEM
Authors: REGOLINI JL BODNAR S OBERLIN JC FERRIEU F GAUNEAU M LAMBERT B BOUCAUD P
Citation: Jl. Regolini et al., STRAIN COMPENSATED HETEROSTRUCTURES IN THE SI1-X-YGEXCY TERNARY-SYSTEM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1015-1019
BAND-EDGE AND DEEP-LEVEL PHOTOLUMINESCENCE OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOYS
Authors: BOUCAUD P FRANCIS C JULIEN FH LOURTIOZ JM BOUCHIER D BODNAR S LAMBERT B REGOLINI JL
Citation: P. Boucaud et al., BAND-EDGE AND DEEP-LEVEL PHOTOLUMINESCENCE OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOYS, Applied physics letters, 64(7), 1994, pp. 875-877
ELIMINATING NEEDLESS TESTING IN INTENSIVE-CARE - AN INFORMATION-BASEDTEAM MANAGEMENT APPROACH
Authors: ROBERTS DE BELL DD OSTRYZNIUK T DOBSON K OPPENHEIMER L MARTENS D HONCHARIK N CRAMP H LOEWEN E BODNAR S GUENTHER A PRONGER L ROBERTS E MCEWEN TA
Citation: De. Roberts et al., ELIMINATING NEEDLESS TESTING IN INTENSIVE-CARE - AN INFORMATION-BASEDTEAM MANAGEMENT APPROACH, Critical care medicine, 21(10), 1993, pp. 1452-1458
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