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Results: 1-25 | 26-50 | 51-63
Results: 26-50/63
MEDIUM-ENERGY ELECTRON-DIFFRACTION AND X-RAY PHOTOELECTRON DIFFRACTION STUDY OF PSEUDOMORPHIC FE SILICIDES GROWN ON SI(111) EVIDENCE OF FE VACANCY FORMATION
Authors: HONG S PIRRI C WETZEL P BOLMONT D GEWINNER G
Citation: S. Hong et al., MEDIUM-ENERGY ELECTRON-DIFFRACTION AND X-RAY PHOTOELECTRON DIFFRACTION STUDY OF PSEUDOMORPHIC FE SILICIDES GROWN ON SI(111) EVIDENCE OF FE VACANCY FORMATION, Applied surface science, 90(1), 1995, pp. 65-74
SURFACE ELECTRONIC AND ATOMIC-STRUCTURE OF ERSI1.7 ON SI(111)
Authors: STAUFFER L MHARCHI A SAINTENOY S PIRRI C WETZEL P BOLMONT D GEWINNER G
Citation: L. Stauffer et al., SURFACE ELECTRONIC AND ATOMIC-STRUCTURE OF ERSI1.7 ON SI(111), Physical review. B, Condensed matter, 52(16), 1995, pp. 11932-11937
IRON ENVIRONMENT IN PSEUDOMORPHIC IRON SILICIDES EPITAXIALLY GROWN ONSI(111)
Authors: PIRRI C TUILIER MH WETZEL P HONG S BOLMONT D GEWINNER G CORTES R HECKMANN O VONKANEL H
Citation: C. Pirri et al., IRON ENVIRONMENT IN PSEUDOMORPHIC IRON SILICIDES EPITAXIALLY GROWN ONSI(111), Physical review. B, Condensed matter, 51(4), 1995, pp. 2302-2310
CHEMISORPTION OF ATOMIC-HYDROGEN ON THE SI(111)7X7 RECONSTRUCTED SURFACE AT LOW-COVERAGE
Authors: STAUFFER L EZZEHAR H BOLMONT D CHELLY R KOULMANN JJ MINOT C
Citation: L. Stauffer et al., CHEMISORPTION OF ATOMIC-HYDROGEN ON THE SI(111)7X7 RECONSTRUCTED SURFACE AT LOW-COVERAGE, Surface science, 342(1-3), 1995, pp. 206-214
INITIAL GROWTH MODE OF CR ON CU(100) AND AG(100) - A COMPARISON
Authors: ROUYER D KREMBEL C HANF MC BOLMONT D GEWINNER G
Citation: D. Rouyer et al., INITIAL GROWTH MODE OF CR ON CU(100) AND AG(100) - A COMPARISON, Surface science, 333, 1995, pp. 957-960
INTERACTION OF GEH4 WITH THE GE(100)2X1 SURFACE
Authors: KOULMANN JJ STEINMETZ D VAN S RINGEISEN F BOLMONT D
Citation: Jj. Koulmann et al., INTERACTION OF GEH4 WITH THE GE(100)2X1 SURFACE, Surface science, 333, 1995, pp. 409-413
SURFACE ELECTRONIC-STRUCTURE OF EPITAXIAL ROOT-3X-ROOT-3 R30-DEGREES ER SILICIDE ON SI(111)
Authors: SAINTENOY S WETZEL P PIRRI C BOLMONT D GEWINNER G
Citation: S. Saintenoy et al., SURFACE ELECTRONIC-STRUCTURE OF EPITAXIAL ROOT-3X-ROOT-3 R30-DEGREES ER SILICIDE ON SI(111), Surface science, 333, 1995, pp. 546-551
METASTABLE FILM GROWTH OF CR ON CU(001)
Authors: ROUYER D KREMBEL C HANF MC PERUCHETTI JC BOLMONT D GEWINNER G
Citation: D. Rouyer et al., METASTABLE FILM GROWTH OF CR ON CU(001), Surface science, 322(1-3), 1995, pp. 34-40
HYDROGEN ADSORPTION ON ERBIUM SILICIDE SURFACE
Authors: SAINTENOY S WETZEL P PIRRI C PERUCHETTI JC BOLMONT D GEWINNER G
Citation: S. Saintenoy et al., HYDROGEN ADSORPTION ON ERBIUM SILICIDE SURFACE, Solid state communications, 94(9), 1995, pp. 719-723
SYMMETRY PROPERTIES OF THE ERSI(1.7)-VALENCE BAND STATES
Authors: WETZEL P SAINTENOY S PIRRI C BOLMONT D GEWINNER G
Citation: P. Wetzel et al., SYMMETRY PROPERTIES OF THE ERSI(1.7)-VALENCE BAND STATES, Solid state communications, 93(7), 1995, pp. 557-561
SELECTIVE THERMAL - AS OPPOSED TO NONSELECTIVE PLASMA - NITRIDATION OF SI-GE RELATED MATERIALS EXAMINED BY IN-SITU PHOTOEMISSION TECHNIQUES
Authors: AUBEL D DIANI M KUBLER L BISCHOFF JL BOLMONT D
Citation: D. Aubel et al., SELECTIVE THERMAL - AS OPPOSED TO NONSELECTIVE PLASMA - NITRIDATION OF SI-GE RELATED MATERIALS EXAMINED BY IN-SITU PHOTOEMISSION TECHNIQUES, Journal of non-crystalline solids, 187, 1995, pp. 319-323
FORMATION OF EPITAXIAL 1-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) SILICIDES ON SI(111)(X (0)
Authors: HONG S WETZEL P GEWINNER G BOLMONT D PIRRI C
Citation: S. Hong et al., FORMATION OF EPITAXIAL 1-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) SILICIDES ON SI(111)(X (0), Journal of applied physics, 78(9), 1995, pp. 5404-5411
GROWTH OF EPITAXIAL SI1-XGEX LAYERS ON SI(001) SURFACE, BY CATALYTICAL DECOMPOSITION OF DISILANE AND GERMANE - PHOTOEMISSION-STUDIES
Authors: CHELLY R ANGOT T BOLMONT D KOULMANN JJ
Citation: R. Chelly et al., GROWTH OF EPITAXIAL SI1-XGEX LAYERS ON SI(001) SURFACE, BY CATALYTICAL DECOMPOSITION OF DISILANE AND GERMANE - PHOTOEMISSION-STUDIES, Applied physics letters, 67(12), 1995, pp. 1733-1735
IN-SITU SURFACE TECHNIQUE ANALYSES AND EX-SITU CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN ON SI(001)-2X1 BY MOLECULAR-BEAM EPITAXY
Authors: AUBEL D DIANI M STOEHR M BISCHOFF JL KUBLER L BOLMONT D FRAISSE B FOURCADE R MULLER D
Citation: D. Aubel et al., IN-SITU SURFACE TECHNIQUE ANALYSES AND EX-SITU CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN ON SI(001)-2X1 BY MOLECULAR-BEAM EPITAXY, Journal de physique. III, 4(4), 1994, pp. 733-740
STRICT THERMAL NITRIDATION SELECTIVITY BETWEEN SI AND GE USED AS A CHEMICAL PROBE OF THE OUTERMOST LAYER OF SI1-XGEX ALLOYS AND GE SI(001) OR SI/GE(001) HETEROSTRUCTURES/
Authors: AUBEL D DIANI M BISCHOFF JL BOLMONT D KUBLER L
Citation: D. Aubel et al., STRICT THERMAL NITRIDATION SELECTIVITY BETWEEN SI AND GE USED AS A CHEMICAL PROBE OF THE OUTERMOST LAYER OF SI1-XGEX ALLOYS AND GE SI(001) OR SI/GE(001) HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2699-2704
SEARCH FOR CARBON NITRIDE CNX COMPOUNDS WITH A HIGH-NITROGEN CONTENT BY ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION
Authors: DIANI M MANSOUR A KUBLER L BISCHOFF JL BOLMONT D
Citation: M. Diani et al., SEARCH FOR CARBON NITRIDE CNX COMPOUNDS WITH A HIGH-NITROGEN CONTENT BY ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION, DIAMOND AND RELATED MATERIALS, 3(3), 1994, pp. 264-269
SEARCH FOR CARBON NITRIDE CNX COMPOUNDS WITH A HIGH-NITROGEN CONTENT BY ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION - REPLY
Authors: DIANI M MANSOUR A KUBLER L BISCHOFF JL BOLMONT D
Citation: M. Diani et al., SEARCH FOR CARBON NITRIDE CNX COMPOUNDS WITH A HIGH-NITROGEN CONTENT BY ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION - REPLY, DIAMOND AND RELATED MATERIALS, 3(10), 1994, pp. 1279-1279
GROWTH OF A GE SI/GE(100) HETEROSTRUCTURE BY VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4 GASES - PHOTOEMISSION AND LOW-ENERGY-ELECTRON DIFFRACTION STUDIES/
Authors: RINGEISEN F STEINMETZ D VAN S BOLMONT D KOULMANN JJ
Citation: F. Ringeisen et al., GROWTH OF A GE SI/GE(100) HETEROSTRUCTURE BY VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4 GASES - PHOTOEMISSION AND LOW-ENERGY-ELECTRON DIFFRACTION STUDIES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 14-17
A COMPARATIVE-STUDY OF INTERGRANULAR PINNING STRENGTHS IN HIGH-TEMPERATURE SUPERCONDUCTORS
Authors: BERLING D BOLMONT D MEHDAOUI A LOEGEL B
Citation: D. Berling et al., A COMPARATIVE-STUDY OF INTERGRANULAR PINNING STRENGTHS IN HIGH-TEMPERATURE SUPERCONDUCTORS, Physica. C, Superconductivity, 235, 1994, pp. 2737-2738
EFFECT OF ANNEALING ON A GE THIN-FILM ON A SI(111)7X7 SURFACE - A STUDY USING ARUPS, XPD, AND LEED
Authors: VAN S STEINMETZ D BOLMONT D KOULMANN JJ
Citation: S. Van et al., EFFECT OF ANNEALING ON A GE THIN-FILM ON A SI(111)7X7 SURFACE - A STUDY USING ARUPS, XPD, AND LEED, Physical review. B, Condensed matter, 50(7), 1994, pp. 4424-4429
INTERFACIAL STRUCTURE OF 2-DIMENSIONAL EPITAXIAL ER SILICIDE ON SI(111)
Authors: TUILIER MH WETZEL P PIRRI C BOLMONT D GEWINNER G
Citation: Mh. Tuilier et al., INTERFACIAL STRUCTURE OF 2-DIMENSIONAL EPITAXIAL ER SILICIDE ON SI(111), Physical review. B, Condensed matter, 50(4), 1994, pp. 2333-2338
SURFACE-STATES AND RECONSTRUCTION OF EPITAXIAL ROOT-3-X-ROOT-3R 30-DEGREES ER SILICIDE ON SI(111)
Authors: WETZEL P SAINTENOY S PIRRI C BOLMONT D GEWINNER G
Citation: P. Wetzel et al., SURFACE-STATES AND RECONSTRUCTION OF EPITAXIAL ROOT-3-X-ROOT-3R 30-DEGREES ER SILICIDE ON SI(111), Physical review. B, Condensed matter, 50(15), 1994, pp. 10886-10892
SURFACE-STATES AND RECONSTRUCTION OF EPITAXIAL ROOT-3-X-ROOT-3R 30-DEGREES ER SILICIDE ON SI(111)
Authors: WETZEL P SAINTENOY S PIRRI C BOLMONT D GEWINNER G
Citation: P. Wetzel et al., SURFACE-STATES AND RECONSTRUCTION OF EPITAXIAL ROOT-3-X-ROOT-3R 30-DEGREES ER SILICIDE ON SI(111), Physical review. B, Condensed matter, 50(15), 1994, pp. 10886-10892
ELECTRON-CYCLOTRON-RESONANCE PLASMA ION-BEAM EFFECTS ON THE FORMATIONOF SIC ON SI(001) CHARACTERIZED BY IN-SITU PHOTOEMISSION
Authors: DIANI M AUBEL D BISCHOFF JL KUBLER L BOLMONT D
Citation: M. Diani et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA ION-BEAM EFFECTS ON THE FORMATIONOF SIC ON SI(001) CHARACTERIZED BY IN-SITU PHOTOEMISSION, Thin solid films, 241(1-2), 1994, pp. 305-309
THERMAL AND CATALYTIC DECOMPOSITION OF SI2H6 ON A GE(100)2X1 SURFACE - PHOTOEMISSION AND LEED STUDIES
Authors: STEINMETZ D VAN S RINGEISEN F BOLMONT D KOULMANN JJ
Citation: D. Steinmetz et al., THERMAL AND CATALYTIC DECOMPOSITION OF SI2H6 ON A GE(100)2X1 SURFACE - PHOTOEMISSION AND LEED STUDIES, Surface science, 309, 1994, pp. 253-257
Risultati: 1-25 | 26-50 | 51-63