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Results: 1-25 | 26-43
Results: 1-25/43
BAND ALIGNMENT AND BARRIER HEIGHT CONSIDERATIONS FOR THE QUANTUM-CONFINED STARK-EFFECT
Authors: YIP RYF DESJARDINS P ISNARD L AITOUALI A BENSAADA A MARCHAND H BREBNER JL CURRIE JF MASUT RA
Citation: Ryf. Yip et al., BAND ALIGNMENT AND BARRIER HEIGHT CONSIDERATIONS FOR THE QUANTUM-CONFINED STARK-EFFECT, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 801-804
ION-IMPLANTATION INDUCED PHOTOSENSITIVITY IN GE-DOPED SILICA - EFFECTOF INDUCED DEFECTS ON REFRACTIVE-INDEX CHANGES
Authors: ESSID M BREBNER JL ALBERT J AWAZU K
Citation: M. Essid et al., ION-IMPLANTATION INDUCED PHOTOSENSITIVITY IN GE-DOPED SILICA - EFFECTOF INDUCED DEFECTS ON REFRACTIVE-INDEX CHANGES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 616-619
DIFFERENCE IN THE BEHAVIOR OF OXYGEN-DEFICIENT DEFECTS IN GE-DOPED SILICA OPTICAL-FIBER PREFORMS UNDER ARF AND KRF EXCIMER-LASER IRRADIATION
Authors: ESSID M BREBNER JL ALBERT J AWAZU K
Citation: M. Essid et al., DIFFERENCE IN THE BEHAVIOR OF OXYGEN-DEFICIENT DEFECTS IN GE-DOPED SILICA OPTICAL-FIBER PREFORMS UNDER ARF AND KRF EXCIMER-LASER IRRADIATION, Journal of applied physics, 84(8), 1998, pp. 4193-4197
LOCALIZATION OF EXCITONS BY POTENTIAL FLUCTUATIONS AND ITS EFFECT ON THE STOKES SHIFT IN INGAP INP QUANTUM-CONFINED HETEROSTRUCTURES/
Authors: AITOUALI A CHENNOUF A YIP RYF BREBNER JL LEONELLI R MASUT RA
Citation: A. Aitouali et al., LOCALIZATION OF EXCITONS BY POTENTIAL FLUCTUATIONS AND ITS EFFECT ON THE STOKES SHIFT IN INGAP INP QUANTUM-CONFINED HETEROSTRUCTURES/, Journal of applied physics, 84(10), 1998, pp. 5639-5642
STRAIN RELAXATION AND EXCITON LOCALIZATION EFFECTS ON THE STOKES SHIFT IN INASXP1-X INP MULTIPLE-QUANTUM WELLS/
Authors: AITOUALI A YIP RYF BREBNER JL MASUT RA
Citation: A. Aitouali et al., STRAIN RELAXATION AND EXCITON LOCALIZATION EFFECTS ON THE STOKES SHIFT IN INASXP1-X INP MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 83(6), 1998, pp. 3153-3160
BAND ALIGNMENT ENGINEERING FOR HIGH-SPEED, LOW DRIVE FIELD QUANTUM-CONFINED STARK-EFFECT DEVICES
Authors: YIP RYF DESJARDINS P ISNARD L AITOUALI A MARCHAND H BREBNER JL CURRIE JF MASUT RA
Citation: Ryf. Yip et al., BAND ALIGNMENT ENGINEERING FOR HIGH-SPEED, LOW DRIVE FIELD QUANTUM-CONFINED STARK-EFFECT DEVICES, Journal of applied physics, 83(3), 1998, pp. 1758-1769
ANNEALING OF DEFECTS INDUCED BY GE IRRADIATION OF SILICA PROBED WITH VARIABLE-ENERGY POSITRONS
Authors: KNIGHTS AP ALLARD LB BREBNER JL SIMPSON PJ
Citation: Ap. Knights et al., ANNEALING OF DEFECTS INDUCED BY GE IRRADIATION OF SILICA PROBED WITH VARIABLE-ENERGY POSITRONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 86-89
PHOTOINDUCED OPTICAL-ABSORPTION AND 400-NM LUMINESCENCE IN LOW-GERMANIUM-CONTENT OPTICAL-FIBER PREFORMS IRRADIATED WITH ARF AND KRF EXCIMER-LASER LIGHT
Authors: ALLARD IB ALBERT J BREBNER JL ATKINS GR
Citation: Ib. Allard et al., PHOTOINDUCED OPTICAL-ABSORPTION AND 400-NM LUMINESCENCE IN LOW-GERMANIUM-CONTENT OPTICAL-FIBER PREFORMS IRRADIATED WITH ARF AND KRF EXCIMER-LASER LIGHT, Optics letters, 22(11), 1997, pp. 819-821
BAND-TO-BAND TRANSITIONS AND FREE-EXCITON STATES IN LOW-SYMMETRY CRYSTALLINE GATE
Authors: WAN JZ POLLAK FH BREBNER JL LEONELLI R
Citation: Jz. Wan et al., BAND-TO-BAND TRANSITIONS AND FREE-EXCITON STATES IN LOW-SYMMETRY CRYSTALLINE GATE, Solid state communications, 102(1), 1997, pp. 17-21
STRAIN AND RELAXATION EFFECTS IN INASP INP MULTIPLE-QUANTUM-WELL OPTICAL MODULATOR DEVICES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY (VOL 81, PG 1905, 1997)/
Authors: YIP RYF AITOUALI A BENSAADA A DESJARDINS P BEAUDOIN M ISNARD L BREBNER JL CURRIE JF MASUT RA
Citation: Ryf. Yip et al., STRAIN AND RELAXATION EFFECTS IN INASP INP MULTIPLE-QUANTUM-WELL OPTICAL MODULATOR DEVICES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY (VOL 81, PG 1905, 1997)/, Journal of applied physics, 82(12), 1997, pp. 6372-6372
STRAIN AND RELAXATION EFFECTS IN INASP INP MULTIPLE-QUANTUM-WELL OPTICAL MODULATOR DEVICES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY/
Authors: YIP RYF AITOUALI A BENSAADA A DESJARDINS P BEAUDOIN M ISNARD L BREBNER JL CURRIE JF MASUT RA
Citation: Ryf. Yip et al., STRAIN AND RELAXATION EFFECTS IN INASP INP MULTIPLE-QUANTUM-WELL OPTICAL MODULATOR DEVICES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY/, Journal of applied physics, 81(4), 1997, pp. 1905-1915
LUMINESCENCE LINEWIDTH STUDY OF 2 FREE-EXCITON PEAKS IN CRYSTALLINE GATE
Authors: WAN JZ LEONELLI R BREBNER JL
Citation: Jz. Wan et al., LUMINESCENCE LINEWIDTH STUDY OF 2 FREE-EXCITON PEAKS IN CRYSTALLINE GATE, Physics letters. A, 219(5-6), 1996, pp. 345-348
POSSIBILITY OF COHERENT-LIGHT EMISSION FROM EXCITONS IN CRYSTALLINE GATE
Authors: WAN JZ BREBNER JL LEONELLI R
Citation: Jz. Wan et al., POSSIBILITY OF COHERENT-LIGHT EMISSION FROM EXCITONS IN CRYSTALLINE GATE, Physical review. B, Condensed matter, 53(23), 1996, pp. 15413-15416
EFFECT OF RAPID THERMAL ANNEALING ON THE OPTICAL AND STRUCTURAL-PROPERTIES OF HIGHLY STRAINED INAS INP QUANTUM-WELL STRUCTURES/
Authors: XING QJ BREBNER JL LUO XM BEAUDOIN M CHENNOUF A AHMAD G CHEN CW
Citation: Qj. Xing et al., EFFECT OF RAPID THERMAL ANNEALING ON THE OPTICAL AND STRUCTURAL-PROPERTIES OF HIGHLY STRAINED INAS INP QUANTUM-WELL STRUCTURES/, Solid state communications, 98(11), 1996, pp. 1009-1013
PHOTOCONDUCTIVITY OF INSB GAAS HETEROSTRUCTURES AT LOW-TEMPERATURE/
Authors: BEAULIEU Y WEBB JB BREBNER JL
Citation: Y. Beaulieu et al., PHOTOCONDUCTIVITY OF INSB GAAS HETEROSTRUCTURES AT LOW-TEMPERATURE/, Journal of applied physics, 79(3), 1996, pp. 1772-1778
SI ION IMPLANTATION-INDUCED DAMAGE IN FUSED-SILICA PROBED BY VARIABLE-ENERGY POSITRONS
Authors: KNIGHTS AP SIMPSON PJ ALLARD LB BREBNER JL ALBERT J
Citation: Ap. Knights et al., SI ION IMPLANTATION-INDUCED DAMAGE IN FUSED-SILICA PROBED BY VARIABLE-ENERGY POSITRONS, Journal of applied physics, 79(12), 1996, pp. 9022-9028
EFFICIENCY OF TIN DIFFUSION BARRIER BETWEEN AL AND SI PREPARED BY REACTIVE EVAPORATION AND RAPID THERMAL ANNEALING
Authors: GAGNON G CURRIE JF BREBNER JL DARWALL T
Citation: G. Gagnon et al., EFFICIENCY OF TIN DIFFUSION BARRIER BETWEEN AL AND SI PREPARED BY REACTIVE EVAPORATION AND RAPID THERMAL ANNEALING, Journal of applied physics, 79(10), 1996, pp. 7612-7620
ION IMPLANTATION-INDUCED STRONG PHOTOSENSITIVITY IN HIGH-PURITY FUSED-SILICA - CORRELATION OF INDEX CHANGES WITH VUV COLOR-CENTERS
Authors: VERHAEGEN M BREBNER JL ALLARD LB ALBERT J
Citation: M. Verhaegen et al., ION IMPLANTATION-INDUCED STRONG PHOTOSENSITIVITY IN HIGH-PURITY FUSED-SILICA - CORRELATION OF INDEX CHANGES WITH VUV COLOR-CENTERS, Applied physics letters, 68(22), 1996, pp. 3084-3086
PHOTOREFRACTIVE WAVE-GUIDES PRODUCED BY ION-IMPLANTATION OF FUSED-SILICA
Authors: VERHAEGEN M ALLARD LB BREBNER JL ESSID M ROORDA S ALBERT J
Citation: M. Verhaegen et al., PHOTOREFRACTIVE WAVE-GUIDES PRODUCED BY ION-IMPLANTATION OF FUSED-SILICA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 438-441
FREE-EXCITON STATES IN CRYSTALLINE GATE
Authors: WAN JZ BREBNER JL LEONELLI R
Citation: Jz. Wan et al., FREE-EXCITON STATES IN CRYSTALLINE GATE, Physical review. B, Condensed matter, 52(23), 1995, pp. 16561-16566
EFFECT OF PERSISTENT PHOTOCONDUCTIVITY ON PHOTOCONDUCTIVITY SPECTRA IN GAXIN1-XP INP-FE (X-LESS-THAN-0.18)/
Authors: ZHAO YG HUANG XL CHEN WX WANG SM MASUT RA BREBNER JL
Citation: Yg. Zhao et al., EFFECT OF PERSISTENT PHOTOCONDUCTIVITY ON PHOTOCONDUCTIVITY SPECTRA IN GAXIN1-XP INP-FE (X-LESS-THAN-0.18)/, Solid state communications, 96(11), 1995, pp. 843-846
E(1)-GAP RESONANT ENHANCEMENT OF THE RAMAN-SCATTERING FROM HIGHLY STRAINED INAS INP SHORT-PERIOD SUPERLATTICES
Authors: TRAN CA BREBNER JL LEONELLI R JOUANNE M MASUT RA
Citation: Ca. Tran et al., E(1)-GAP RESONANT ENHANCEMENT OF THE RAMAN-SCATTERING FROM HIGHLY STRAINED INAS INP SHORT-PERIOD SUPERLATTICES, Superlattices and microstructures, 15(4), 1994, pp. 391-397
INTERFACES OF INASP INP MULTIPLE-QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/
Authors: TRAN CA GRAHAM JT BREBNER JL MASUT RA
Citation: Ca. Tran et al., INTERFACES OF INASP INP MULTIPLE-QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of electronic materials, 23(12), 1994, pp. 1291-1296
DETERMINATION BY RAMAN-SCATTERING OF THE IN-DEPTH DAMAGE PROFILE IN HIGH-ENERGY ION-IMPLANTATION
Authors: ARES R TRUDEAU YB BREBNER JL KAJRYS GE JOUANNE M
Citation: R. Ares et al., DETERMINATION BY RAMAN-SCATTERING OF THE IN-DEPTH DAMAGE PROFILE IN HIGH-ENERGY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 419-423
OPTICAL PHONONS IN STRAINED SINGLE INAS INP QUANTUM-WELLS - A RAMAN-STUDY/
Authors: TRAN CA BREBNER JL LEONELLI R JOUANNE M MASUT RA
Citation: Ca. Tran et al., OPTICAL PHONONS IN STRAINED SINGLE INAS INP QUANTUM-WELLS - A RAMAN-STUDY/, Physical review. B, Condensed matter, 49(16), 1994, pp. 11268-11271
Risultati: 1-25 | 26-43