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Results: 1-11 |
Results: 11
SURFACE-BARRIER HEIGHT IN METAL-SIC STRUCTURES OF 6H, 4H AND 3C POLYTYPES
Authors: SYRKIN AL BLUET JM BASTIDE G BRETAGNON T LEBEDEV AA RASTEGAEVA MG SAVKINA NS CHELNOKOV VE
Citation: Al. Syrkin et al., SURFACE-BARRIER HEIGHT IN METAL-SIC STRUCTURES OF 6H, 4H AND 3C POLYTYPES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 236-239
POSITRON-ANNIHILATION INVESTIGATIONS OF VACANCIES IN INP PRODUCED BY ELECTRON-IRRADIATION AT ROOM-TEMPERATURE
Authors: BRETAGNON T DANNEFAER S KERR D
Citation: T. Bretagnon et al., POSITRON-ANNIHILATION INVESTIGATIONS OF VACANCIES IN INP PRODUCED BY ELECTRON-IRRADIATION AT ROOM-TEMPERATURE, Journal of applied physics, 81(8), 1997, pp. 3446-3452
VACANCIES IN POLYCRYSTALLINE DIAMOND FILMS
Authors: DANNEFAER S ZHU W BRETAGNON T KERR D
Citation: S. Dannefaer et al., VACANCIES IN POLYCRYSTALLINE DIAMOND FILMS, Physical review. B, Condensed matter, 53(4), 1996, pp. 1979-1984
A POSITRON LIFETIME INVESTIGATION OF INP ELECTRON-IRRADIATED AT 100 K
Authors: DANNEFAER S BRETAGNON T KERR D
Citation: S. Dannefaer et al., A POSITRON LIFETIME INVESTIGATION OF INP ELECTRON-IRRADIATED AT 100 K, Journal of applied physics, 80(7), 1996, pp. 3750-3756
A POSITRON-ANNIHILATION INVESTIGATION OF POROUS SILICON
Authors: DANNEFAER S KERR D CRAIGEN D BRETAGNON T TELIERCIO T FOUCARAN A
Citation: S. Dannefaer et al., A POSITRON-ANNIHILATION INVESTIGATION OF POROUS SILICON, Journal of applied physics, 79(12), 1996, pp. 9110-9117
POROUS SILICON MEMBRANES FOR GAS-SENSOR APPLICATIONS
Authors: TALIERCIO T DILHAN M MASSONE E FOUCARAN A GUE AM BRETAGNON T FRAISSE B MONTES L
Citation: T. Taliercio et al., POROUS SILICON MEMBRANES FOR GAS-SENSOR APPLICATIONS, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 43-46
POSITRON LIFETIME SPECTROSCOPY OF N-TYPE AND P-TYPE POROUS SILICON
Authors: DANNEFAER S BRETAGNON T FOUCARAN A TALIERCIO T KERR D
Citation: S. Dannefaer et al., POSITRON LIFETIME SPECTROSCOPY OF N-TYPE AND P-TYPE POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 171-173
CHARACTER AND DISTRIBUTION OF VACANCIES IN CZOCHRALSKI-GROWN SILICON INGOTS
Authors: DANNEFAER S BRETAGNON T
Citation: S. Dannefaer et T. Bretagnon, CHARACTER AND DISTRIBUTION OF VACANCIES IN CZOCHRALSKI-GROWN SILICON INGOTS, Journal of applied physics, 77(11), 1995, pp. 5584-5588
POSITRON LIFETIME INVESTIGATIONS OF DIAMOND FILMS
Authors: DANNEFAER S BRETAGNON T KERR D
Citation: S. Dannefaer et al., POSITRON LIFETIME INVESTIGATIONS OF DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 2(12), 1993, pp. 1479-1482
VACANCY-TYPE DEFECTS IN CRYSTALLINE AND AMORPHOUS SIO2
Authors: DANNEFAER S BRETAGNON T KERR D
Citation: S. Dannefaer et al., VACANCY-TYPE DEFECTS IN CRYSTALLINE AND AMORPHOUS SIO2, Journal of applied physics, 74(2), 1993, pp. 884-890
INDIUM VACANCY IN AS-GROWN INP - A POSITRON-ANNIHILATION STUDY
Authors: BRETAGNON T DANNEFAER S KERR D
Citation: T. Bretagnon et al., INDIUM VACANCY IN AS-GROWN INP - A POSITRON-ANNIHILATION STUDY, Journal of applied physics, 73(9), 1993, pp. 4697-4699
Risultati: 1-11 |