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Results: 1-25 | 26-35 |
Results: 26-35/35
STUDY OF C2F6 OVERETCH INDUCED DAMAGE AND THE EFFECTS OF OVERETCH ON SUBSEQUENT SICL4 ETCH OF GAAS ALGAAS/
Authors: OOI BS HICKS SE BRYCE AC WILKINSON CDW MARSH JH
Citation: Bs. Ooi et al., STUDY OF C2F6 OVERETCH INDUCED DAMAGE AND THE EFFECTS OF OVERETCH ON SUBSEQUENT SICL4 ETCH OF GAAS ALGAAS/, Journal of applied physics, 77(10), 1995, pp. 4961-4966
FAR-FIELD BEHAVIOR OF 980NM BROAD AREA LASERS INCORPORATING BANDGAP WIDENED EXTENDED SLAB WAVE-GUIDES
Authors: MCILVANEY K CARSON J BRYCE AC MARSH JH NICKLIN R
Citation: K. Mcilvaney et al., FAR-FIELD BEHAVIOR OF 980NM BROAD AREA LASERS INCORPORATING BANDGAP WIDENED EXTENDED SLAB WAVE-GUIDES, Electronics Letters, 31(7), 1995, pp. 553-554
INTEGRATION PROCESS FOR PHOTONIC INTEGRATED-CIRCUITS USING PLASMA DAMAGE-INDUCED LAYER INTERMIXING
Authors: OOI BS BRYCE AC MARSH JH
Citation: Bs. Ooi et al., INTEGRATION PROCESS FOR PHOTONIC INTEGRATED-CIRCUITS USING PLASMA DAMAGE-INDUCED LAYER INTERMIXING, Electronics Letters, 31(6), 1995, pp. 449-451
QUANTUM-WELL INTERMIXING WITH HIGH SPATIAL SELECTIVITY USING A PULSED-LASER TECHNIQUE
Authors: MCLEAN CJ MCKEE A LULLO G BRYCE AC DELARUE RM MARSH JH
Citation: Cj. Mclean et al., QUANTUM-WELL INTERMIXING WITH HIGH SPATIAL SELECTIVITY USING A PULSED-LASER TECHNIQUE, Electronics Letters, 31(15), 1995, pp. 1285-1286
FABRICATION OF PHOTONIC INTEGRATED-CIRCUITS USING QUANTUM-WELL INTERMIXING
Authors: MARSH JH BRYCE AC
Citation: Jh. Marsh et Ac. Bryce, FABRICATION OF PHOTONIC INTEGRATED-CIRCUITS USING QUANTUM-WELL INTERMIXING, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 272-278
A COMPARISON OF CARBON AND ZINC DOPING IN GAAS ALGAAS LASERS BANDGAP-TUNED BY IMPURITY-FREE VACANCY DISORDERING/
Authors: AYLING SG BRYCE AC GONTIJO I MARSH JH ROBERTS JS
Citation: Sg. Ayling et al., A COMPARISON OF CARBON AND ZINC DOPING IN GAAS ALGAAS LASERS BANDGAP-TUNED BY IMPURITY-FREE VACANCY DISORDERING/, Semiconductor science and technology, 9(11), 1994, pp. 2149-2151
FABRICATION OF ELECTROABSORPTION OPTICAL MODULATORS USING LASER DISORDERED GAINAS GAINASP MULTIQUANTUM-WELL STRUCTURES/
Authors: LULLO G MCKEE A MCLEAN CJ BRYCE AC BUTTON C MARSH JH
Citation: G. Lullo et al., FABRICATION OF ELECTROABSORPTION OPTICAL MODULATORS USING LASER DISORDERED GAINAS GAINASP MULTIQUANTUM-WELL STRUCTURES/, Electronics Letters, 30(19), 1994, pp. 1623-1625
HIGH-QUALITY WAVELENGTH TUNED MULTIQUANTUM-WELL GAINAS GAINASP LASERSFABRICATED USING PHOTOABSORPTION INDUCED DISORDERING/
Authors: MCKEE A MCLEAN CJ BRYCE AC DELARUE RM MARSH JH BUTTON C
Citation: A. Mckee et al., HIGH-QUALITY WAVELENGTH TUNED MULTIQUANTUM-WELL GAINAS GAINASP LASERSFABRICATED USING PHOTOABSORPTION INDUCED DISORDERING/, Applied physics letters, 65(18), 1994, pp. 2263-2265
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF FLUORINE AND BORON-IMPLANTED AND ANNEALED GAAS ALGAAS/
Authors: OOI BS BRYCE AC MARSH JH MARTIN J
Citation: Bs. Ooi et al., TRANSMISSION ELECTRON-MICROSCOPY STUDY OF FLUORINE AND BORON-IMPLANTED AND ANNEALED GAAS ALGAAS/, Applied physics letters, 65(1), 1994, pp. 85-87
STUDY OF REACTIVE ION ETCHING-INDUCED DAMAGE IN GAAS ALGAAS STRUCTURES USING A QUANTUM-WELL INTERMIXING PROBE/
Authors: OOI BS BRYCE AC WILKINSON CDW MARSH JH
Citation: Bs. Ooi et al., STUDY OF REACTIVE ION ETCHING-INDUCED DAMAGE IN GAAS ALGAAS STRUCTURES USING A QUANTUM-WELL INTERMIXING PROBE/, Applied physics letters, 64(5), 1994, pp. 598-600
Risultati: 1-25 | 26-35 |