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Results:
1-24
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Results: 24
Authors:
HYLAND JT
KENNEDY GT
MILLER A
BUTTON CC
Citation: Jt. Hyland et al., PICOSECOND ALL-OPTICAL POLARIZATION SWITCHING IN INGAASP MQWS AT 1.52MU-M, IEEE photonics technology letters, 10(10), 1998, pp. 1419-1421
Authors:
YOW HK
HOUSTON PA
BUTTON CC
DAVID JPR
NG CMS
Citation: Hk. Yow et al., EFFECTS OF HIGH-TEMPERATURE ANNEALING ON THE DEVICE CHARACTERISTICS OF GA0.52IN0.48P GAAS AND AL0.52IN0.48P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of electronic materials, 27(1), 1998, pp. 17-23
Authors:
HALL DJ
HOSEA TJC
BUTTON CC
Citation: Dj. Hall et al., ANALYSIS OF STRAINED INGAAS INGAASP SINGLE QUANTUM-WELLS USING ROOM-TEMPERATURE PHOTOREFLECTANCE/, Semiconductor science and technology, 13(3), 1998, pp. 302-309
Authors:
LYE BC
HOUSTON PA
BUTTON CC
DAVID JPR
Citation: Bc. Lye et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF HEAVILY-DOPED GAAS-C BASESOF HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 42(1), 1998, pp. 115-120
Authors:
FLITCROFT RM
DAVID JPR
HOUSTON PA
BUTTON CC
Citation: Rm. Flitcroft et al., AVALANCHE MULTIPLICATION IN GAINP GAAS SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1207-1212
Authors:
LYE BC
HOUSTON PA
YOW HK
BUTTON CC
Citation: Bc. Lye et al., GAINP ALGAAS/GAINP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH ZERO CONDUCTION-BAND SPIKE AT THE COLLECTOR/, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2417-2421
Authors:
HAMILTON CJ
KOWALSKI OP
MCILVANEY K
BRYCE A
MARSH JH
BUTTON CC
Citation: Cj. Hamilton et al., BANDGAP TUNING OF VISIBLE LASER MATERIAL, Electronics Letters, 34(7), 1998, pp. 665-666
Authors:
DORR U
KALT H
SEND W
GERTHSEN D
MOWBRAY DJ
BUTTON CC
Citation: U. Dorr et al., NANOSTRUCTURE OF ORDERING VARIANTS IN (ALXGA1-X)(0.52)IN0.48P GROWN ON DIFFERENT VICINAL GAAS SUBSTRATES, Applied physics letters, 73(12), 1998, pp. 1679-1681
Authors:
DORR U
KALT H
MOWBRAY DJ
BUTTON CC
Citation: U. Dorr et al., STIMULATED-EMISSION FROM LOCALIZED STATES IN PARTIALLY ORDERED (ALXGA1-X)(0.52)IN0.48P, Applied physics letters, 72(7), 1998, pp. 821-823
Authors:
KOWALSKI OP
HAMILTON CJ
MCDOUGALL SD
MARSH JH
BRYCE AC
DELARUE RM
VOGELE B
STANLEY CR
BUTTON CC
ROBERTS JS
Citation: Op. Kowalski et al., A UNIVERSAL DAMAGE-INDUCED TECHNIQUE FOR QUANTUM-WELL INTERMIXING, Applied physics letters, 72(5), 1998, pp. 581-583
Authors:
CHEN YH
WILKINSON CI
WOODHEAD J
DAVID JPR
BUTTON CC
ROBSON PN
Citation: Yh. Chen et al., INFLUENCE OF ORDERING ON THE POLARIZATION CHARACTERISTICS OF GAINP VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 9(2), 1997, pp. 143-145
Authors:
CHEN YH
WILKINSON CI
WOODHEAD J
DAVID JPR
BUTTON CC
ROBSON PN
Citation: Yh. Chen et al., POLARIZATION CHARACTERISTICS OF VISIBLE VCSELS, Journal of crystal growth, 170(1-4), 1997, pp. 394-398
Authors:
MCKEE A
MCLEAN CJ
LULLO G
BRYCE AC
DELARUE RM
MARSH JH
BUTTON CC
Citation: A. Mckee et al., MONOLITHIC INTEGRATION IN INGAAS-INGAASP MULTIPLE-QUANTUM-WELL STRUCTURES USING LASER INTERMIXING, IEEE journal of quantum electronics, 33(1), 1997, pp. 45-55
Authors:
DAVIDSON BR
HART L
NEWMAN RC
JOYCE TB
BULLOUGH TJ
BUTTON CC
Citation: Br. Davidson et al., CARBON DELTA-DOPING GAAS SUPERLATTICES, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 355-360
Authors:
CHEN YH
WILKINSON CI
WOODHEAD J
BUTTON CC
DAVID JPR
PATE MA
ROBSON PN
Citation: Yh. Chen et al., POLARIZATION CHARACTERISTICS OF INGAALP ALGAAS VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS/, Electronics Letters, 32(6), 1996, pp. 559-560
Authors:
LYE BC
YOW HK
HOUSTON PA
BUTTON CC
Citation: Bc. Lye et al., ELECTRON-MOBILITY ENHANCEMENT IN HEAVILY-DOPED GAAS-C HETEROJUNCTION BIPOLAR-TRANSISTORS, Electronics Letters, 32(25), 1996, pp. 2351-2352
Authors:
KOWALSKI OP
WEGERER RM
MOWBRAY DJ
SKOLNICK MS
BUTTON CC
ROBERTS JS
HOPKINSON M
DAVID JPR
HILL G
Citation: Op. Kowalski et al., OPTICAL SPECTROSCOPIC OBSERVATION OF SPONTANEOUS LONG-RANGE ORDERING IN ALGAINP, Applied physics letters, 68(23), 1996, pp. 3266-3268
Authors:
CHEN YH
WOODHEAD J
DAVID JPR
BUTTON CC
HOPKINSON M
ROBERTS JS
SALE TE
ROBSON PN
Citation: Yh. Chen et al., VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS AT LAMBDA-LESS-THAN-650 NM, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 12-16
Authors:
MOTTAHEDEH R
PARRY G
WHITEHEAD M
ROBERTS JS
BUTTON CC
Citation: R. Mottahedeh et al., HIGH-POWER PERFORMANCE OF ASYMMETRIC FABRY-PEROT MQW MODULATORS, IEEE photonics technology letters, 6(6), 1994, pp. 703-705
Authors:
THIRSTRUP C
ROBSON PN
WA PLK
PATE MA
BUTTON CC
ROBERTS JS
Citation: C. Thirstrup et al., ELECTROOPTICAL MODULATION IN MULTIPLE-QUANTUM-WELL HETERO-NIPI WAVE-GUIDES, Journal of lightwave technology, 12(3), 1994, pp. 425-429
Authors:
ROBERTS JS
BUTTON CC
CHEW A
Citation: Js. Roberts et al., THE INCORPORATION OF OXYGEN INTO INALAS, THE ROLE OF TRIMETHYLINDIUM (TMI), Journal of crystal growth, 135(1-2), 1994, pp. 365-366
Authors:
YOW HK
HOUSTON PA
BUTTON CC
LEE TW
ROBERTS JS
Citation: Hk. Yow et al., HETEROJUNCTION BIPOLAR-TRANSISTORS IN ALGAINP GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of applied physics, 76(12), 1994, pp. 8135-8141
Authors:
YOW HK
LEE TW
HOUSTON PA
LEE HY
BUTTON CC
ROBERTS JS
Citation: Hk. Yow et al., DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS USING ALGAINP GAAS/GAINP/, Electronics Letters, 30(2), 1994, pp. 167-169
Authors:
PETTERSSON H
GRIMMEISS HG
POWELL AL
BUTTON CC
ROBERTS JS
ROCKETT PI
Citation: H. Pettersson et al., PERSISTENT DECREASE OF DARK CONDUCTIVITY DUE TO ILLUMINATION IN ALGAAS GAAS MODULATION-DOPED HETEROSTRUCTURES/, Journal of applied physics, 74(9), 1993, pp. 5596-5601
Risultati:
1-24
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