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Results:
1-7
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Results: 7
Authors:
Park, JM
Kim, ED
Kim, SC
Kim, NK
Bahng, W
Song, GH
Han, SB
Citation: Jm. Park et al., A monolithic IGBT gate driver for intelligent power modules implemented in0.8 mu m high voltage (50 V) CMOS process, MICROELEC J, 32(5-6), 2001, pp. 537-541
Authors:
Yamaguchi, H
Nishizawa, S
Kato, T
Oyanagi, N
Bahng, W
Yoshida, S
Arai, K
Machitani, Y
Kikuchi, T
Citation: H. Yamaguchi et al., In situ x-ray topography of silicon carbide during crystal growth by sublimation method, REV SCI INS, 71(7), 2000, pp. 2829-2832
Authors:
Khan, MN
Nishizawa, S
Bahng, W
Arai, K
Citation: Mn. Khan et al., Liquid-phase epitaxy on 6H-SiC Acheson seed crystals in closed vessel, J CRYST GR, 220(1-2), 2000, pp. 75-81
Authors:
Jeong, JK
Na, HJ
Choi, J
Hwang, CS
Kim, HJ
Bahng, W
Citation: Jk. Jeong et al., Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilymethane precursor, J CRYST GR, 210(4), 2000, pp. 629-636
Authors:
Bahng, W
Kitou, Y
Nishizawa, S
Yamaguchi, H
Khan, MN
Oyanagi, N
Nishino, S
Arai, K
Citation: W. Bahng et al., Rapid enlargement of SiC single crystal using a cone-shaped platform, J CRYST GR, 209(4), 2000, pp. 767-772
Authors:
Yamaguchi, H
Nishizawa, S
Bahng, W
Fukuda, K
Yoshida, S
Arai, K
Takano, Y
Citation: H. Yamaguchi et al., Reflection and transmission X-ray topographic study of a SiC crystal and epitaxial wafer, MAT SCI E B, 61-2, 1999, pp. 221-224
Authors:
Jeong, JK
Na, HJ
Choi, YS
Kim, HJ
Bahng, W
Citation: Jk. Jeong et al., Homoepitaxial growth of high-quality 6H-SiC thin films by using chemical-vapor deposition with bis-trimethylsilylmethane at a low temperature, J KOR PHYS, 35, 1999, pp. S391-S394
Risultati:
1-7
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