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Results: 1-25 | 26-26
Results: 1-25/26
Ion nitriding of Al: growth kinetics and characterisation of the nitride layer
Authors: Telbizova, T Parascandola, S Prokert, F Barradas, NP Richter, E Moller, W
Citation: T. Telbizova et al., Ion nitriding of Al: growth kinetics and characterisation of the nitride layer, SURF COAT, 142, 2001, pp. 1028-1033
Artificial neural network analysis of RBS data of Er-implanted sapphire
Authors: Barradas, NP Vieira, A Alves, E
Citation: Np. Barradas et al., Artificial neural network analysis of RBS data of Er-implanted sapphire, NUCL INST B, 175, 2001, pp. 108-112
Composition of NiTaC films on Si using neural networks analysis of elasticbackscattering data
Authors: Vieira, A Barradas, NP
Citation: A. Vieira et Np. Barradas, Composition of NiTaC films on Si using neural networks analysis of elasticbackscattering data, NUCL INST B, 174(3), 2001, pp. 367-372
Error performance analysis of artificial neural networks applied to Rutherford backscattering
Authors: Vieira, A Barradas, NP Jeynes, C
Citation: A. Vieira et al., Error performance analysis of artificial neural networks applied to Rutherford backscattering, SURF INT AN, 31(1), 2001, pp. 35-38
Rutherford backscattering analysis of thin films and superlattices with roughness
Authors: Barradas, NP
Citation: Np. Barradas, Rutherford backscattering analysis of thin films and superlattices with roughness, J PHYS D, 34(14), 2001, pp. 2109-2116
Rutherford backscattering spectrometry and computer simulation for the in-depth analysis of chemically modified poly(vinylidene fluoride)
Authors: Ross, GJ Barradas, NP Hill, MP Jeynes, C Morrissey, P Watts, JF
Citation: Gj. Ross et al., Rutherford backscattering spectrometry and computer simulation for the in-depth analysis of chemically modified poly(vinylidene fluoride), J MATER SCI, 36(19), 2001, pp. 4731-4738
Tunnel junctions with AlN barriers and FeTaN electrodes
Authors: Wang, JG Cardoso, S Freitas, PP Wei, P Barradas, NP Soares, JC
Citation: Jg. Wang et al., Tunnel junctions with AlN barriers and FeTaN electrodes, J APPL PHYS, 89(11), 2001, pp. 6868-6870
Resistance decrease in spin tunnel junctions by control of natural oxidation conditions
Authors: Zhang, ZG Freitas, PP Ramos, AR Barradas, NP Soares, JC
Citation: Zg. Zhang et al., Resistance decrease in spin tunnel junctions by control of natural oxidation conditions, APPL PHYS L, 79(14), 2001, pp. 2219-2221
Artificial neural network algorithm for analysis of Rutherford backscattering data
Authors: Barradas, NP Vieira, A
Citation: Np. Barradas et A. Vieira, Artificial neural network algorithm for analysis of Rutherford backscattering data, PHYS REV E, 62(4), 2000, pp. 5818-5829
Neural network analysis of Rutherford backscattering data
Authors: Vieira, A Barradas, NP
Citation: A. Vieira et Np. Barradas, Neural network analysis of Rutherford backscattering data, NUCL INST B, 170(1-2), 2000, pp. 235-238
Composition of Ni-Ta-C thick films using simulated annealing analysis of elastic backscattering spectrometry data
Authors: Jeynes, C Barradas, NP Wilde, JR Greer, AL
Citation: C. Jeynes et al., Composition of Ni-Ta-C thick films using simulated annealing analysis of elastic backscattering spectrometry data, NUCL INST B, 161, 2000, pp. 287-292
Simultaneous and consistent analysis of NRA, RES and ERDA data with the IBA DataFurnace
Authors: Barradas, NP Parascandola, S Sealy, BJ Grotzschel, R Kreissig, U
Citation: Np. Barradas et al., Simultaneous and consistent analysis of NRA, RES and ERDA data with the IBA DataFurnace, NUCL INST B, 161, 2000, pp. 308-313
Growth and characterisation of amorphous carbon films doped with nitrogen
Authors: Barradas, NP Khan, RUA Anguita, JV Silva, SRP Kreissig, U Grotzschel, R Moller, W
Citation: Np. Barradas et al., Growth and characterisation of amorphous carbon films doped with nitrogen, NUCL INST B, 161, 2000, pp. 969-974
Accurate depth profiling of complex optical coatings
Authors: Jeynes, C Barradas, NP Rafla-Yuan, H Hichwa, BP Close, R
Citation: C. Jeynes et al., Accurate depth profiling of complex optical coatings, SURF INT AN, 30(1), 2000, pp. 237-242
Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers
Authors: Veloso, A Freitas, PP Wei, P Barradas, NP Soares, JC Almeida, B Sousa, JB
Citation: A. Veloso et al., Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers, APPL PHYS L, 77(7), 2000, pp. 1020-1022
Bayesian inference analysis of ellipsometry data
Authors: Barradas, NP Keddie, JL Sackin, R
Citation: Np. Barradas et al., Bayesian inference analysis of ellipsometry data, PHYS REV E, 59(5), 1999, pp. 6138-6151
Growth of microcrystalline beta-SiC films on silicon by ECR plasma CVD
Authors: Toal, SJ Reehal, HS Barradas, NP Jeynes, C
Citation: Sj. Toal et al., Growth of microcrystalline beta-SiC films on silicon by ECR plasma CVD, APPL SURF S, 139, 1999, pp. 424-428
Unambiguous automatic evaluation of multiple Ion Beam Analysis data with Simulated Annealing
Authors: Barradas, NP Jeynes, C Webb, RP Kreissig, U Grotzschel, R
Citation: Np. Barradas et al., Unambiguous automatic evaluation of multiple Ion Beam Analysis data with Simulated Annealing, NUCL INST B, 149(1-2), 1999, pp. 233-237
Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy
Authors: Knights, AP Nejim, A Barradas, NP Coleman, PG
Citation: Ap. Knights et al., Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy, NUCL INST B, 148(1-4), 1999, pp. 340-344
RES and ERDA study of ion beam synthesised amorphous gallium nitride
Authors: Barradas, NP Almeida, SA Jeynes, C Knights, AP Silva, SRP Sealy, BJ
Citation: Np. Barradas et al., RES and ERDA study of ion beam synthesised amorphous gallium nitride, NUCL INST B, 148(1-4), 1999, pp. 463-467
The influence of implantation and annealing conditions on optical activityof Er3+ ions in 6H SiC
Authors: Kozanecki, A Jeynes, C Barradas, NP Sealy, BJ Jantsch, W
Citation: A. Kozanecki et al., The influence of implantation and annealing conditions on optical activityof Er3+ ions in 6H SiC, NUCL INST B, 148(1-4), 1999, pp. 512-516
High-depth-resolution Rutherford backscattering data and error analysis ofSiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms
Authors: Barradas, NP Knights, AP Jeynes, C Mironov, OA Grasby, TJ Parker, EHC
Citation: Np. Barradas et al., High-depth-resolution Rutherford backscattering data and error analysis ofSiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms, PHYS REV B, 59(7), 1999, pp. 5097-5105
Bayesian error analysis of Rutherford backscattering spectra
Authors: Barradas, NP Jeynes, C Jenkin, M Marriott, PK
Citation: Np. Barradas et al., Bayesian error analysis of Rutherford backscattering spectra, THIN SOL FI, 344, 1999, pp. 31-34
Structural analysis of nanocrystalline SiC thin films grown on silicon by ECR plasma CVD
Authors: Toal, SJ Reehal, HS Webb, SJ Barradas, NP Jeynes, C
Citation: Sj. Toal et al., Structural analysis of nanocrystalline SiC thin films grown on silicon by ECR plasma CVD, THIN SOL FI, 344, 1999, pp. 292-294
Processing and characterisation of sol-gel deposited Ta2O5 and TiO2-Ta2O5 dielectric thin films
Authors: Cappellani, A Keddie, JL Barradas, NP Jackson, SM
Citation: A. Cappellani et al., Processing and characterisation of sol-gel deposited Ta2O5 and TiO2-Ta2O5 dielectric thin films, SOL ST ELEC, 43(6), 1999, pp. 1095-1099
Risultati: 1-25 | 26-26