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Results: 1-13 |
Results: 13
Suppression of electron injection into a finite superlattice in an appliedmagnetic field - art. no. 195323
Authors: Krokhin, AA Fromhold, TM Belyaev, AE Murphy, HM Eaves, L Sherwood, D Main, PC Henini, M
Citation: Aa. Krokhin et al., Suppression of electron injection into a finite superlattice in an appliedmagnetic field - art. no. 195323, PHYS REV B, 6319(19), 2001, pp. 5323
Resonant spectroscopy of electric-field-induced superlattices
Authors: Vitusevich, SA Forster, A Luth, H Belyaev, AE Danylyuk, SV Konakova, RV Sheka, DI
Citation: Sa. Vitusevich et al., Resonant spectroscopy of electric-field-induced superlattices, J APPL PHYS, 90(6), 2001, pp. 2857-2861
Tunneling through X-valley-related impurity states in GaAs/AlAs resonant-tunneling diodes
Authors: Vitusevich, SA Forster, A Indlekofer, KM Luth, H Belyaev, AE Glavin, BA Konakova, RV
Citation: Sa. Vitusevich et al., Tunneling through X-valley-related impurity states in GaAs/AlAs resonant-tunneling diodes, PHYS REV B, 61(16), 2000, pp. 10898-10904
Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode
Authors: Vitusevich, SA Forster, A Reetz, W Luth, H Belyaev, AE Danylyuk, SV
Citation: Sa. Vitusevich et al., Fine structure of photoresponse spectra in a double-barrier resonant tunnelling diode, NANOTECHNOL, 11(4), 2000, pp. 305-308
Modulation of the luminescence spectra of InAs self-assembled quantum dotsby resonant tunneling through a quantum well
Authors: Patane, A Polimeni, A Eaves, L Main, PC Henini, M Belyaev, AE Dubrovskii, YV Brounkov, PN Vdovin, EE Khanin, YN Hill, G
Citation: A. Patane et al., Modulation of the luminescence spectra of InAs self-assembled quantum dotsby resonant tunneling through a quantum well, PHYS REV B, 62(20), 2000, pp. 13595-13598
Novel approach to description of optical and magnetotransport data in dilute magnetic semiconductors near semimetal-semiconductor transition
Authors: Tarasov, GG Mazur, YI Kuz'menko, EV Belyaev, AE Hoerstel, W Kraak, W Masselink, WT
Citation: Gg. Tarasov et al., Novel approach to description of optical and magnetotransport data in dilute magnetic semiconductors near semimetal-semiconductor transition, J CRYST GR, 214, 2000, pp. 436-440
Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots
Authors: Patane, A Polimeni, A Eaves, L Main, PC Henini, M Dubrovskii, YV Belyaev, AE Brounkov, PN Vdovin, EE Khanin, YN Hill, G
Citation: A. Patane et al., Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots, J APPL PHYS, 88(4), 2000, pp. 2005-2012
Spectral responsivity of single-quantum-well photodetectors
Authors: Vitusevich, SA Forster, A Reetz, W Luth, H Belyaev, AE Danylyuk, SV
Citation: Sa. Vitusevich et al., Spectral responsivity of single-quantum-well photodetectors, APPL PHYS L, 77(1), 2000, pp. 16-18
Positively charged defects associated with self-assembled quantum dot formation
Authors: Belyaev, AE Stoddart, ST Martin, PM Main, PC Eaves, L Henini, M
Citation: Ae. Belyaev et al., Positively charged defects associated with self-assembled quantum dot formation, APPL PHYS L, 76(24), 2000, pp. 3570-3572
Carrier dynamics in double barrier diodes incorporating quantum dots
Authors: Patane, A Polimeni, A Eaves, L Main, PC Marshall, RK Henini, M Dubrovskii, YV Belyaev, AE Hill, G
Citation: A. Patane et al., Carrier dynamics in double barrier diodes incorporating quantum dots, PHYSICA B, 272(1-4), 1999, pp. 21-23
Peculiarities of the exchange interaction in narrow-gap Hg1-x-yCdxMnySe
Authors: Hoerstel, W Kraak, W Masselink, WT Mazur, YI Tarasov, GG Belyaev, AE Kuzmenko, EV
Citation: W. Hoerstel et al., Peculiarities of the exchange interaction in narrow-gap Hg1-x-yCdxMnySe, SEMIC SCI T, 14(9), 1999, pp. 820-828
Resonant tunnelling effect in delta doped p-n GaAs junction
Authors: Vitusevich, SA Forster, A Belyaev, AE Indlekofer, KM Luth, H Konakova, RV
Citation: Sa. Vitusevich et al., Resonant tunnelling effect in delta doped p-n GaAs junction, MICROEL ENG, 46(1-4), 1999, pp. 169-172
Influence of microwave treatment on the electrophysical characteristics oftechnically important semiconductors and surface-barrier structures
Authors: Belyaev, AA Belyaev, AE Ermolovich, IB Komirenko, SM Konakova, RV Lyapin, VG Milenin, VV Solov'ev, EA Shevelev, MV
Citation: Aa. Belyaev et al., Influence of microwave treatment on the electrophysical characteristics oftechnically important semiconductors and surface-barrier structures, TECH PHYS, 43(12), 1998, pp. 1445-1449
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