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Results:
1-12
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Results: 12
Authors:
Cassette, S
Delage, SL
Chartier, E
Floriot, D
Poisson, MA
Garcia, JC
Grattepain, C
Arroyo, JM
Plana, R
Bland, SW
Citation: S. Cassette et al., Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability, MAT SCI E B, 80(1-3), 2001, pp. 279-283
Authors:
Moriarty, GR
Murtagh, M
Cherkaoui, K
Gouez, G
Kelly, PV
Crean, GM
Bland, SW
Citation: Gr. Moriarty et al., Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers, MAT SCI E B, 80(1-3), 2001, pp. 284-288
Authors:
Mimila-Arroyo, J
Bland, SW
Citation: J. Mimila-arroyo et Sw. Bland, Hydrogen co-doping in III-V semiconductors: Dopant passivation and carbon reactivation kinetics in C-GaAs, MOD PHY L B, 15(17-19), 2001, pp. 585-592
Authors:
Mimila-Arroyo, J
Lusson, A
Chevallier, J
Barbe, M
Theys, B
Jomard, F
Bland, SW
Citation: J. Mimila-arroyo et al., Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition, APPL PHYS L, 79(19), 2001, pp. 3095-3097
Authors:
Burns, D
Hetterich, M
Ferguson, AI
Bente, E
Dawson, MD
Davies, JI
Bland, SW
Citation: D. Burns et al., High-average-power (> 20-W) Nd : YVO4 lasers mode locked by strain-compensated saturable Bragg reflectors, J OPT SOC B, 17(6), 2000, pp. 919-926
Authors:
Griffin, IJ
Wolverson, D
Davies, JJ
Emam-Ismail, M
Heffernan, J
Kean, AH
Bland, SW
Duggan, G
Citation: Ij. Griffin et al., Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy, SEMIC SCI T, 15(11), 2000, pp. 1030-1034
Authors:
Murtagh, M
Beechinor, JT
Cordero, N
Kelly, PV
Crean, GM
Farrell, IL
O'Connor, GM
Bland, SW
Citation: M. Murtagh et al., InGaP/GaAs heterojunction bipolar transistor optical and electronic band structure characterization, THIN SOL FI, 364(1-2), 2000, pp. 58-63
Authors:
Moriarty, GR
Kildemo, M
Beechinor, JT
Murtagh, M
Kelly, PV
Crean, GM
Bland, SW
Citation: Gr. Moriarty et al., Optical and structural properties of InGaP heterostructures, THIN SOL FI, 364(1-2), 2000, pp. 244-248
Authors:
Mimila-Arroyo, J
Bland, SW
Citation: J. Mimila-arroyo et Sw. Bland, Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers, APPL PHYS L, 77(8), 2000, pp. 1164-1166
Authors:
Jones, G
Cain, N
Peggs, DW
Petrie, RP
Bland, SW
Mowbray, DJ
Citation: G. Jones et al., An optical study of the properties of (AlxGa1-x)(0.5)In0.49P epitaxial layers with varying composition, hydrostatic pressure and GaAs substrate orientation, MAT SCI E B, 66(1-3), 1999, pp. 126-130
Authors:
Murtagh, M
Beechinor, JT
Cordero, N
Kelly, PV
Crean, GM
Bland, SW
Citation: M. Murtagh et al., InGaP/GaAs based heterojunction bipolar transistor characterisation using non-contact optical spectroscopy, MAT SCI E B, 66(1-3), 1999, pp. 185-188
Authors:
Amin, FA
Rezazadeh, AA
Bland, SW
Citation: Fa. Amin et al., Non-alloyed ohmic contacts using MOCVD grown n(+)-InxGa1-xAs on n-GaAs, MAT SCI E B, 66(1-3), 1999, pp. 194-198
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