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Results: 1-8 |
Results: 8
Fabrication of ATLAS pixel detector prototypes at IRST
Authors: Boscardin, M Dalla Betta, GF Gregori, P Zen, M Zorzi, N
Citation: M. Boscardin et al., Fabrication of ATLAS pixel detector prototypes at IRST, NUCL INST A, 465(1), 2001, pp. 83-87
Development of ALICE microstrip detectors at IRST
Authors: Boscardin, M Bosisio, L Dalla Betta, GF Gregori, P Rachevskaia, I Zorzi, N
Citation: M. Boscardin et al., Development of ALICE microstrip detectors at IRST, NUCL INST A, 461(1-3), 2001, pp. 188-191
Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors
Authors: Dalla Betta, GF Boscardin, M Bosisio, L Rachevskaia, I Zen, M Zorzi, N
Citation: Gf. Dalla Betta et al., Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors, NUCL INST A, 460(2-3), 2001, pp. 306-315
Monolithic integration of Si-PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy
Authors: Betta, GFD Pignatel, GU Verzellesi, G Boscardin, M Fazzi, A Bosisio, L
Citation: Gfd. Betta et al., Monolithic integration of Si-PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy, NUCL INST A, 458(1-2), 2001, pp. 275-280
Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET
Authors: Fazzi, A Pignatel, GU Dalla Betta, GF Boscardin, M Varoli, V Verzellesi, G
Citation: A. Fazzi et al., Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET, IEEE NUCL S, 47(3), 2000, pp. 829-833
Feasibility study for double-sided silicon microstrip detector fabricationat IRST
Authors: Dalla Betta, GF Boscardin, M Bosisio, L Carmel-Barnea, N Ferrario, L Pignatel, GU Rachevskaia, I Zen, M Zorzi, N
Citation: Gf. Dalla Betta et al., Feasibility study for double-sided silicon microstrip detector fabricationat IRST, NUCL INST A, 431(1-2), 1999, pp. 83-91
An all-implanted p-channel Si JFET fully compatible with CMOS technology
Authors: Dalla Betta, GF Bellutti, P Boscardin, M Ferrario, L Soncini, G Zorzi, N
Citation: Gf. Dalla Betta et al., An all-implanted p-channel Si JFET fully compatible with CMOS technology, MICROELEC J, 30(3), 1999, pp. 281-285
On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes
Authors: Verzellesi, G Dalla Betta, GF Bosisio, L Boscardin, M Pignatel, GU Soncini, G
Citation: G. Verzellesi et al., On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes, IEEE DEVICE, 46(4), 1999, pp. 817-820
Risultati: 1-8 |