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Results:
1-17
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Results: 17
Authors:
Bouarissa, N
Citation: N. Bouarissa, Optoelectronic properties of InAs1-xPx semiconducting alloys, MAT SCI E B, 86(1), 2001, pp. 53-59
Authors:
Bouarissa, N
Bachiri, R
Charifi, Z
Citation: N. Bouarissa et al., Electronic properties of AlxGa1-xAsySb1-y alloys lattice-matched to InAs, PHYS ST S-B, 226(2), 2001, pp. 293-304
Authors:
Bouarissa, N
Citation: N. Bouarissa, Energy gaps and refractive indices of AlxGa1-xAs, MATER CH PH, 72(3), 2001, pp. 387-394
Authors:
Baaziz, H
Charifi, Z
Bouarissa, N
Citation: H. Baaziz et al., Ionicity and transverse effective charge in GaxIn1-xSb1-y quaternary alloysemiconductors, MATER CH PH, 68(1-3), 2001, pp. 197-203
Authors:
Bouarissa, N
Citation: N. Bouarissa, Theoretical investigation of disorder effect on positron states in GaxIn1-xAsySb1-y/GaSb, J PHYS CH S, 62(6), 2001, pp. 1163-1170
Authors:
Bouarissa, N
Citation: N. Bouarissa, Composition dependence of positron states in zincblende Ga1-xInxN, PHIL MAG B, 80(10), 2000, pp. 1743-1756
Authors:
Bouarissa, N
Citation: N. Bouarissa, The behaviour of electron valence and conduction charge densities in InP under pressure, MATER CH PH, 65(1), 2000, pp. 107-112
Authors:
Bouarissa, N
Walker, AB
Citation: N. Bouarissa et Ab. Walker, A computer simulation of slow-positron implantation depths in aluminum, INT J MOD B, 14(15), 2000, pp. 1603-1612
Authors:
Kassali, K
Bouarissa, N
Citation: K. Kassali et N. Bouarissa, Effect of nitrogen concentration on electronic energy bands of Ga1-xInxNyAs1-y alloys, MICROEL ENG, 54(3-4), 2000, pp. 277-286
Pseudopotential calculations of electronic properties of Ga1-xInxN alloys with zinc-blende structure
Authors:
Kassali, K
Bouarissa, N
Citation: K. Kassali et N. Bouarissa, Pseudopotential calculations of electronic properties of Ga1-xInxN alloys with zinc-blende structure, SOL ST ELEC, 44(3), 2000, pp. 501-507
Authors:
Bouarissa, N
Citation: N. Bouarissa, The effect of hydrostatic pressure on the electronic and optical properties of InP, SOL ST ELEC, 44(12), 2000, pp. 2193-2198
Authors:
Bouarissa, N
Citation: N. Bouarissa, Positron behaviour in GaSb under pressure, J PHYS CH S, 61(1), 2000, pp. 109-114
Authors:
Bouarissa, N
Citation: N. Bouarissa, Substrate effect on the electronic structure in GaxIn1-xAsySb1-y/GaSb and GaxIn1-xAsySb1-y/InAs, INFR PHYS T, 40(5), 1999, pp. 423-429
Authors:
Bouarissa, N
Aourag, H
Citation: N. Bouarissa et H. Aourag, Effective masses of electrons and heavy holes in InAs, InSb, GaSb, GaAs and some of their ternary compounds, INFR PHYS T, 40(4), 1999, pp. 343-349
Authors:
Bouarissa, N
Citation: N. Bouarissa, Pseudopotential study of bonding and ionicity in InP at various pressures, INFR PHYS T, 40(2), 1999, pp. 117-121
Authors:
Bouarissa, N
Citation: N. Bouarissa, The effect of compositional disorder on electronic band structure in GaxIn1-xAsySb1-y alloys lattice matched to GaSb, SUPERLATT M, 26(4), 1999, pp. 279-287
Authors:
Bouarissa, N
Citation: N. Bouarissa, Electron momentum densities in GaxIn1-xAsySb1-y probed by positrons, MOD PHY L B, 13(17), 1999, pp. 599-610
Risultati:
1-17
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