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Results: 1-9 |
Results: 9
(InGa)(NAs)/GaAs structures emitting in 1-1.6 mu m wavelength range
Authors: Mereuta, A Saint-Girons, G Bouchoule, S Sagnes, I Alexandre, F Le Roux, G Decobert, J Ougazzaden, A
Citation: A. Mereuta et al., (InGa)(NAs)/GaAs structures emitting in 1-1.6 mu m wavelength range, OPT MATER, 17(1-2), 2001, pp. 185-188
Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
Authors: Mereuta, A Bouchoule, S Alexandre, F Sagnes, I Decobert, J Ougazzaden, A
Citation: A. Mereuta et al., Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE, ELECTR LETT, 36(5), 2000, pp. 436-437
Dense WDM (0.27bit/s/Hz) 4 x 40Gbit/s dispersion-managed transmission over10000km with in-line optical regeneration by channel pairs
Authors: Leclerc, O Brindel, P Rouvillain, D Dany, B Pincemin, E Desurvire, E Duchet, C Shen, A Blache, F Devaux, F Coquelin, A Goix, M Bouchoule, S Nouchi, P
Citation: O. Leclerc et al., Dense WDM (0.27bit/s/Hz) 4 x 40Gbit/s dispersion-managed transmission over10000km with in-line optical regeneration by channel pairs, ELECTR LETT, 36(4), 2000, pp. 337-338
Simultaneously regenerated 4 x 40Gbit/s dense WDM transmission over 10,000km using single 40GHz InP Mach-Zehnder modulator
Authors: Leclerc, O Dany, B Rouvillain, D Brindel, P Desurvire, E Duchet, C Shen, A Devaux, F Coquelin, A Goix, M Bouchoule, S Fleury, L Nouchi, P
Citation: O. Leclerc et al., Simultaneously regenerated 4 x 40Gbit/s dense WDM transmission over 10,000km using single 40GHz InP Mach-Zehnder modulator, ELECTR LETT, 36(18), 2000, pp. 1574-1575
2 x 40Gbit/s WDM optically regenerated dispersion-managed transmission over 10000 km with narrow channel spacing
Authors: Leclerc, O Brindel, P Rouvillain, D Dany, B Pincemin, E Desurvire, E Duchet, C Shen, A Blache, F Grard, E Coquelin, A Goix, M Bouchoule, S Nouchi, P
Citation: O. Leclerc et al., 2 x 40Gbit/s WDM optically regenerated dispersion-managed transmission over 10000 km with narrow channel spacing, ELECTR LETT, 36(1), 2000, pp. 58-59
Photonic technologies for ultra-high-speed information highways - I. 40 Gbit/s TDM components and subsystems
Authors: Bouchoule, S Lefevre, R Legros, E Devaux, F Melchior, H Duelk, M Hess, R Lach, E Bulow, H Veith, G Burie, JR Cadiou, JF Brillouet, F Hourany, J Hoffman, D Sartorius, B Jepsen, KS Clausen, AT Buxens, A Poulsen, HN Stubkjaer, KE Burkhard, H Scholl, HJ Nesset, D Kelly, AE Marcenac, D Penty, RV White, IH
Citation: S. Bouchoule et al., Photonic technologies for ultra-high-speed information highways - I. 40 Gbit/s TDM components and subsystems, OPT FIBER T, 5(3), 1999, pp. 275-300
40Gbit/s polarisation-insensitive and wavelength-independent InP Mach-Zehnder modulator for all-optical regeneration
Authors: Leclerc, O Brindel, P Rouvillain, D Pincemin, E Dany, B Desurvire, E Duchet, C Boucherez, E Bouchoule, S
Citation: O. Leclerc et al., 40Gbit/s polarisation-insensitive and wavelength-independent InP Mach-Zehnder modulator for all-optical regeneration, ELECTR LETT, 35(9), 1999, pp. 730-731
Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N-2 as carrier gas
Authors: Ougazzaden, A Bouchoule, S Mereuta, A Rao, EVK Decobert, J
Citation: A. Ougazzaden et al., Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N-2 as carrier gas, ELECTR LETT, 35(6), 1999, pp. 474-475
Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP
Authors: Sik, H Le Bellego, Y Win, P Bouchoule, S Patriarche, G Boulet, P Le Mestreallan, G Ougazzaden, A
Citation: H. Sik et al., Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP, J CRYST GR, 195(1-4), 1998, pp. 479-484
Risultati: 1-9 |