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Results:
1-10
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Results: 10
Authors:
Boudart, B
Gaquiere, C
Guhel, Y
de Jaeger, JC
Poisson, MA
Citation: B. Boudart et al., Electrical effects of SiNx deposition on GaN MESFETs, ELECTR LETT, 37(8), 2001, pp. 527-528
Authors:
Hoel, V
Guhel, Y
Boudart, B
Gaquiere, C
De Jaeger, JC
Lahreche, H
Gibart, P
Citation: V. Hoel et al., Static measurements of GaN MESFETs on (111) Si substrates, ELECTR LETT, 37(17), 2001, pp. 1095-1096
Authors:
Gaquiere, C
Trassaert, S
Boudart, B
Crosnier, Y
Citation: C. Gaquiere et al., High-power GaN MESFET on sapphire substrate, IEEE MICR G, 10(1), 2000, pp. 19-20
Authors:
Boudart, B
Pesant, JC
de Jaeger, JC
Dhamelincourt, PA
Citation: B. Boudart et al., Raman characterization of GaN synthesized by N implantation in GaAs substrate, J RAMAN SP, 31(7), 2000, pp. 615-618
Authors:
Boudart, B
Trassaert, S
Wallart, X
Pesant, JC
Yaradou, O
Theron, D
Crosnier, Y
Lahreche, H
Omnes, F
Citation: B. Boudart et al., Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN, J ELEC MAT, 29(5), 2000, pp. 603-606
Authors:
Gaquiere, C
Boudart, B
Dhamelincourt, PA
Citation: C. Gaquiere et al., Spatial mapping of electroluminescence due to impact ionization in high electron mobility transistors, APPL SPECTR, 54(10), 2000, pp. 1423-1428
Authors:
Hue, X
Boudart, B
Bonte, B
Crosnier, Y
Citation: X. Hue et al., Uniformity improvement of linear power pHEMTs using a very high selective wet etching, MICROW OPT, 23(3), 1999, pp. 192-194
Authors:
Boudart, B
Gaquiere, C
Constant, M
Lorriaux, A
Lefebvre, N
Citation: B. Boudart et al., Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate, J RAMAN SP, 30(8), 1999, pp. 715-719
Authors:
Trassaert, S
Boudart, B
Gaquiere, C
Theron, D
Crosnier, Y
Huet, F
Poisson, MA
Citation: S. Trassaert et al., Trap effects studies in GaN MESFETs by pulsed measurements, ELECTR LETT, 35(16), 1999, pp. 1386-1388
Authors:
Boudart, B
Gaquiere, C
Trassaert, S
Constant, M
Lorriaux, A
Lefebvre, N
Citation: B. Boudart et al., Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n(+) Ga0.47In0.53As layers for InP high electron mobility transistor applications, APPL PHYS L, 74(21), 1999, pp. 3221-3223
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