Citation: C. Gaquiere et al., Spatial mapping of electroluminescence due to impact ionization in high electron mobility transistors, APPL SPECTR, 54(10), 2000, pp. 1423-1428
Authors:
Boudart, B
Gaquiere, C
Constant, M
Lorriaux, A
Lefebvre, N
Citation: B. Boudart et al., Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate, J RAMAN SP, 30(8), 1999, pp. 715-719
Authors:
Boudart, B
Gaquiere, C
Trassaert, S
Constant, M
Lorriaux, A
Lefebvre, N
Citation: B. Boudart et al., Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n(+) Ga0.47In0.53As layers for InP high electron mobility transistor applications, APPL PHYS L, 74(21), 1999, pp. 3221-3223