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Results: 1-12 |
Results: 12
Spectroscopy and mechanical modification of single strain-induced quantum dots
Authors: Bracker, AS Tischler, JG Gammon, D Nosho, BZ
Citation: As. Bracker et al., Spectroscopy and mechanical modification of single strain-induced quantum dots, PHYS ST S-B, 224(1), 2001, pp. 133-137
Barrier roughness effects in resonant interband tunnel diodes
Authors: Magno, R Bracker, AS Bennett, BR Nosho, BZ Whitman, LJ
Citation: R. Magno et al., Barrier roughness effects in resonant interband tunnel diodes, J APPL PHYS, 90(12), 2001, pp. 6177-6181
Resonant interband tunnel diodes with AlGaSb barriers
Authors: Magno, R Bracker, AS Bennett, BR
Citation: R. Magno et al., Resonant interband tunnel diodes with AlGaSb barriers, J APPL PHYS, 89(10), 2001, pp. 5791-5793
Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode-giant magnetoresistance circuits
Authors: Hanbicki, AT Magno, R Cheng, SF Park, YD Bracker, AS Jonker, BT
Citation: At. Hanbicki et al., Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode-giant magnetoresistance circuits, APPL PHYS L, 79(8), 2001, pp. 1190-1192
Stoichiometry-induced roughness on antimonide growth surfaces
Authors: Bracker, AS Nosho, BZ Barvosa-Carter, W Whitman, LJ Bennett, BR Shanabrook, BV Culbertson, JC
Citation: As. Bracker et al., Stoichiometry-induced roughness on antimonide growth surfaces, APPL PHYS L, 78(17), 2001, pp. 2440-2442
Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes
Authors: Magno, R Weaver, BD Bracker, AS Bennett, BR
Citation: R. Magno et al., Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes, APPL PHYS L, 78(17), 2001, pp. 2581-2583
Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system
Authors: Bennett, BR Bracker, AS Magno, R Boos, JB Bass, R Park, D
Citation: Br. Bennett et al., Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system, J VAC SCI B, 18(3), 2000, pp. 1650-1652
Structure of III-Sb(001) growth surfaces: The role of heterodimers
Authors: Barvosa-Carter, W Bracker, AS Culbertson, JC Nosho, BZ Shanabrook, BV Whitman, LJ Kim, H Modine, NA Kaxiras, E
Citation: W. Barvosa-carter et al., Structure of III-Sb(001) growth surfaces: The role of heterodimers, PHYS REV L, 84(20), 2000, pp. 4649-4652
Surface reconstruction phase diagrams for InAs, AlSb, and GaSb
Authors: Bracker, AS Yang, MJ Bennett, BR Culbertson, JC Moore, WJ
Citation: As. Bracker et al., Surface reconstruction phase diagrams for InAs, AlSb, and GaSb, J CRYST GR, 220(4), 2000, pp. 384-392
Characterization of AlSb/InAs surfaces and resonant tunneling devices
Authors: Nosho, BZ Weinberg, WH Barvosa-Carter, W Bracker, AS Magno, R Bennett, BR Culbertson, JC Shanabrook, BV Whitman, LJ
Citation: Bz. Nosho et al., Characterization of AlSb/InAs surfaces and resonant tunneling devices, J VAC SCI B, 17(4), 1999, pp. 1786-1790
Coherence in polyatomic photodissociation: Aligned O(P-3) from photodissociation of NO2 at 212.8 nm
Authors: Ahmed, M Peterka, DS Bracker, AS Vasyutinskii, OS Suits, AG
Citation: M. Ahmed et al., Coherence in polyatomic photodissociation: Aligned O(P-3) from photodissociation of NO2 at 212.8 nm, J CHEM PHYS, 110(9), 1999, pp. 4115-4118
Imaging the alignment angular distribution: State symmetries, coherence effects, and nonadiabatic interactions in photodissociation
Authors: Bracker, AS Wouters, ER Suits, AG Vasyutinskii, OS
Citation: As. Bracker et al., Imaging the alignment angular distribution: State symmetries, coherence effects, and nonadiabatic interactions in photodissociation, J CHEM PHYS, 110(14), 1999, pp. 6749-6765
Risultati: 1-12 |