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Results: 1-25/35
Authors:
Anwand, W
Brauer, G
Hasegawa, M
Dersch, O
Rauch, F
Citation: W. Anwand et al., A study of positron properties in quartz crystals and synthetic silica glass, ACT PHY P A, 99(3-4), 2001, pp. 321-328
Authors:
Nancheva, N
Docheva, P
Anwand, W
Brauer, G
Citation: N. Nancheva et al., Characterization of Sn films on silicon by slow positron implantation spectroscopy, ACT PHY P A, 99(3-4), 2001, pp. 435-440
Authors:
Nicht, EM
Brauer, G
Tempus, G
Citation: Em. Nicht et al., Long-time aging behaviour of the alloy Al-2024 characterized by positron annihilation spectroscopy, ACT PHY P A, 99(3-4), 2001, pp. 441-445
Authors:
Thome, T
Fradin, J
Grynszpan, RI
Anwand, W
Brauer, G
Citation: T. Thome et al., Positron implantation depth profiles in alpha-irradiated 18 carets gold, NUCL INST B, 178, 2001, pp. 342-345
Authors:
Fradin, J
Thome, T
Grynszpan, RI
Thome, L
Anwand, W
Brauer, G
Citation: J. Fradin et al., Precursory stage of damage production in argon irradiated cubic zirconia, NUCL INST B, 175, 2001, pp. 516-520
Authors:
Vergohl, M
Malkomes, N
Matthee, T
Brauer, G
Richter, U
Nickol, FW
Bruch, J
Citation: M. Vergohl et al., In situ monitoring of optical coatings on architectural glass and comparison of the accuracy of the layer thickness attainable with ellipsometry and photometry, THIN SOL FI, 392(2), 2001, pp. 258-264
Authors:
Muller, J
Schope, G
Kluth, O
Rech, B
Ruske, M
Trube, J
Szyszka, B
Jiang, X
Brauer, G
Citation: J. Muller et al., Upscaling of texture-etched zinc oxide substrates for silicon thin film solar cells, THIN SOL FI, 392(2), 2001, pp. 327-333
Authors:
Peeva, A
Koegler, R
Brauer, G
Werner, P
Skorupa, W
Citation: A. Peeva et al., Metallic impurity gettering to defects remaining in the R-P/2 region of MeV-ion implanted and annealed silicon, MAT SC S PR, 3(4), 2000, pp. 297-301
Authors:
Vergohl, M
Malkomes, N
Szyszka, B
Neumann, F
Matthee, T
Brauer, G
Citation: M. Vergohl et al., Optimization of the reflectivity of magnetron sputter deposited silver films, J VAC SCI A, 18(4), 2000, pp. 1632-1637
Authors:
Brauer, G
Anwand, W
Nicht, EM
Kuriplach, J
Prochazka, I
Becvar, F
Osipowicz, A
Coleman, PG
Citation: G. Brauer et al., Characterization of rf-sputtered platinum films by positron annihilation spectroscopy, PHYS REV B, 62(8), 2000, pp. 5199-5206
Authors:
Panda, BK
Brauer, G
Skorupa, W
Kuriplach, J
Citation: Bk. Panda et al., Positron energy levels in semiconductors, PHYS REV B, 61(23), 2000, pp. 15848-15853
Authors:
Heister, U
Krempel-Hesse, J
Szczyrbowski, J
Teschner, G
Bruch, J
Brauer, G
Citation: U. Heister et al., TwinMag II: Improving an advanced sputtering tool, VACUUM, 59(2-3), 2000, pp. 424-430
Authors:
Vergohl, M
Malkomes, N
Matthee, T
Brauer, G
Citation: M. Vergohl et al., Real time control of reactive magnetron-sputter deposited optical filters by in situ spectroscopic ellipsometry, THIN SOL FI, 377, 2000, pp. 43-47
Authors:
Brauer, G
Citation: G. Brauer, The paleolithic of Moravia and Silesia, HOMO, 51(2-3), 2000, pp. 274-274
Authors:
Brauer, G
Citation: G. Brauer, The first people of Europe, HOMO, 51(2-3), 2000, pp. 274-274
Authors:
Kogler, R
Peeva, A
Anwand, W
Brauer, G
Skorupa, W
Werner, P
Gosele, U
Citation: R. Kogler et al., Reply to "Comment on 'Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon' " [Appl. Phys. Lett. 77, 151 (2000)], APPL PHYS L, 77(1), 2000, pp. 153-153
Authors:
Brauer, G
Citation: G. Brauer, Neandertals and modern humans in Western Asia, ANTHROP SCI, 107(2), 1999, pp. 193-194
Authors:
Nancheva, N
Docheva, P
Anwand, W
Brauer, G
Coleman, PG
Citation: N. Nancheva et al., Magnetron sputtered SnOx films on tin probed by slow positron implantationspectroscopy, ACT PHY P A, 95(4), 1999, pp. 623-626
Authors:
Panda, BK
Brauer, G
Citation: Bk. Panda et G. Brauer, Positron affinities and deformation potentials in cubic semiconductors, ACT PHY P A, 95(4), 1999, pp. 641-646
Authors:
Szczyrbowski, J
Brauer, G
Ruske, M
Bartella, J
Schroeder, J
Zmelty, A
Citation: J. Szczyrbowski et al., Some properties of TiO2 layers prepared by medium frequency reactive sputtering, SURF COAT, 112(1-3), 1999, pp. 261-266
Authors:
Brauer, G
Citation: G. Brauer, Large area glass coating, SURF COAT, 112(1-3), 1999, pp. 358-365
Authors:
Sendezera, EJ
Davidson, AT
Fischer, CG
Connel, SH
Sellschop, JPF
Anwand, W
Brauer, G
Nicht, EM
Citation: Ej. Sendezera et al., Characterisation of Al+-implanted LiF by a monoenergetic positron beam, APPL SURF S, 149(1-4), 1999, pp. 125-129
Authors:
Anwand, W
Brauer, G
Coleman, PG
Yankov, R
Skorupa, W
Citation: W. Anwand et al., Characterization of vacancy-type defects in Al+ and N+ co-implanted SiC byslow positron implantation spectroscopy, APPL SURF S, 149(1-4), 1999, pp. 140-143
Authors:
Anwand, W
Brauer, G
Coleman, PG
Voelskow, M
Skorupa, W
Citation: W. Anwand et al., Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering, APPL SURF S, 149(1-4), 1999, pp. 148-150
Authors:
Kuriplach, J
Sob, M
Brauer, G
Anwand, W
Nicht, EM
Coleman, PG
Wagner, N
Citation: J. Kuriplach et al., Positron affinity in semiconductors: Theoretical and experimental studies, PHYS REV B, 59(3), 1999, pp. 1948-1955