AAAAAA
Results:
1-7
|
Results: 7
Authors:
Picard, C
Brisset, C
Hoffman, A
Charles, JP
Joffre, F
Adams, L
Siedle, AH
Citation: C. Picard et al., Use of electrical stress and isochronal annealing on power mosfets in order to characterize the effects of Co-60 irradiation., MICROEL REL, 40(8-10), 2000, pp. 1647-1652
Authors:
Armani, JM
Brisset, C
Joffre, F
Dentan, M
Citation: Jm. Armani et al., Response of MOSFETS from DMILL technology to high total dose levels, IEEE NUCL S, 47(3), 2000, pp. 592-597
Authors:
Brisset, C
Noblanc, O
Picard, C
Joffre, F
Brylinski, C
Citation: C. Brisset et al., 4H-SiC MESFETs behavior after high dose irradiation, IEEE NUCL S, 47(3), 2000, pp. 598-603
Authors:
Picard, C
Brisset, C
Quittard, O
Marceau, M
Hoffmann, A
Joffre, F
Charles, JP
Citation: C. Picard et al., Use of commercial VDMOSFETs in electronic systems subjected to radiation, IEEE NUCL S, 47(3), 2000, pp. 627-633
Authors:
Picard, C
Brisset, C
Quittard, O
Hoffmann, A
Joffre, F
Charles, JP
Citation: C. Picard et al., Radiation hardening of power MOSFETs using electrical stress, IEEE NUCL S, 47(3), 2000, pp. 641-646
Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 mu m SRAMs
Authors:
Quittard, O
Joffre, F
Brisset, C
Oudea, C
Saigne, F
Dusseau, L
Fesquet, J
Gasiot, J
Citation: O. Quittard et al., Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 mu m SRAMs, IEEE NUCL S, 46(6), 1999, pp. 1633-1639
Authors:
Marceau, M
Brisset, C
Da Costa, M
Citation: M. Marceau et al., Study of dose effects on IGBT-type devices subjected to gamma irradiation, IEEE NUCL S, 46(6), 1999, pp. 1680-1685
Risultati:
1-7
|