Authors:
Picard, C
Brisset, C
Hoffman, A
Charles, JP
Joffre, F
Adams, L
Siedle, AH
Citation: C. Picard et al., Use of electrical stress and isochronal annealing on power mosfets in order to characterize the effects of Co-60 irradiation., MICROEL REL, 40(8-10), 2000, pp. 1647-1652
Authors:
Quittard, O
Joffre, F
Brisset, C
Oudea, C
Saigne, F
Dusseau, L
Fesquet, J
Gasiot, J
Citation: O. Quittard et al., Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 mu m SRAMs, IEEE NUCL S, 46(6), 1999, pp. 1633-1639