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Results: 1-12 |
Results: 12
A NOVEL HIGH-SPEED, 3-ELEMENT SI-BASED STATIC RANDOM-ACCESS MEMORY (SRAM) CELL
Authors: CARNS TK ZHENG X WANG KL
Citation: Tk. Carns et al., A NOVEL HIGH-SPEED, 3-ELEMENT SI-BASED STATIC RANDOM-ACCESS MEMORY (SRAM) CELL, IEEE electron device letters, 16(6), 1995, pp. 256-258
DEPENDENCE OF DAMAGE AND STRAIN ON THE TEMPERATURE OF SI IRRADIATION IN EPITAXIAL GE0.10SI0.90 FILMS ON SI(100)
Authors: LIE DYC SONG JH VANTOMME A EISEN F NICOLET MA THEODORE ND CARNS TK WANG KL
Citation: Dyc. Lie et al., DEPENDENCE OF DAMAGE AND STRAIN ON THE TEMPERATURE OF SI IRRADIATION IN EPITAXIAL GE0.10SI0.90 FILMS ON SI(100), Journal of applied physics, 77(6), 1995, pp. 2329-2338
CHEMICAL ETCHING OF SI1-XGEX IN HF-H2O2-CH3COOH
Authors: CARNS TK TANNER MO WANG KL
Citation: Tk. Carns et al., CHEMICAL ETCHING OF SI1-XGEX IN HF-H2O2-CH3COOH, Journal of the Electrochemical Society, 142(4), 1995, pp. 1260-1266
GESI SI BISTABLE DIODE EXHIBITING A LARGE ON/OFF CONDUCTANCE RATIO/
Authors: ZHENG X CARNS TK WANG KL
Citation: X. Zheng et al., GESI SI BISTABLE DIODE EXHIBITING A LARGE ON/OFF CONDUCTANCE RATIO/, Applied physics letters, 66(18), 1995, pp. 2403-2405
BORON DELTA-DOPING IN SI AND SIGE AND ITS APPLICATION TOWARD FIELD-EFFECT TRANSISTOR DEVICES
Authors: CARNS TK ZHENG X WANG KL WU SL WANG SJ
Citation: Tk. Carns et al., BORON DELTA-DOPING IN SI AND SIGE AND ITS APPLICATION TOWARD FIELD-EFFECT TRANSISTOR DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1203-1206
A P-CHANNEL COUPLED DELTA-DOPED SILICON MESFET GROWN BY MOLECULAR-BEAM EPITAXY
Authors: WANG SJ WU SL CHUNG HD CARNS TK ZHENG X WANG KL
Citation: Sj. Wang et al., A P-CHANNEL COUPLED DELTA-DOPED SILICON MESFET GROWN BY MOLECULAR-BEAM EPITAXY, IEEE electron device letters, 15(6), 1994, pp. 206-208
EPITAXIAL GE LAYERS ON SI VIA GEXSI1-XO2 REDUCTION - THE ROLES OF THEHYDROGEN PARTIAL-PRESSURE AND THE GE CONTENT
Authors: LIU WS NICOLET MA CARNS TK WANG KL
Citation: Ws. Liu et al., EPITAXIAL GE LAYERS ON SI VIA GEXSI1-XO2 REDUCTION - THE ROLES OF THEHYDROGEN PARTIAL-PRESSURE AND THE GE CONTENT, Journal of electronic materials, 23(5), 1994, pp. 437-440
DAMAGE AND STRAIN IN PSEUDOMORPHIC VS RELAXED GEXSI1-X LAYERS ON SI(100) GENERATED BY SI ION IRRADIATION
Authors: LIE DYC VANTOMME A EISEN F VREELAND T NICOLET MA CARNS TK WANG KL HOLLANDER B
Citation: Dyc. Lie et al., DAMAGE AND STRAIN IN PSEUDOMORPHIC VS RELAXED GEXSI1-X LAYERS ON SI(100) GENERATED BY SI ION IRRADIATION, Journal of electronic materials, 23(4), 1994, pp. 369-373
HOLE MOBILITY MEASUREMENTS IN HEAVILY-DOPED SI1-XGEX STRAINED LAYERS
Authors: CARNS TK CHUN SK TANNER MO WANG KL KAMINS TI TURNER JE LIE DYC NICOLET MA WILSON RG
Citation: Tk. Carns et al., HOLE MOBILITY MEASUREMENTS IN HEAVILY-DOPED SI1-XGEX STRAINED LAYERS, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1273-1281
DAMAGE AND STRAIN IN EPITAXIAL GEXSI1-X FILMS IRRADIATED WITH SI
Authors: LIE DYC VANTOMME A EISEN F VREELAND T NICOLET MA CARNS TK ARBETENGELS V WANG KL
Citation: Dyc. Lie et al., DAMAGE AND STRAIN IN EPITAXIAL GEXSI1-X FILMS IRRADIATED WITH SI, Journal of applied physics, 74(10), 1993, pp. 6039-6045
BORON DELTA-DOPED SI METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY
Authors: WU SL CARNS TK WANG SJ WANG KL
Citation: Sl. Wu et al., BORON DELTA-DOPED SI METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 63(10), 1993, pp. 1363-1365
ENHANCEMENT OF SI HOLE MOBILITY IN COUPLED DELTA-DOPED WELLS
Authors: CARNS TK ZHENG X WANG KL
Citation: Tk. Carns et al., ENHANCEMENT OF SI HOLE MOBILITY IN COUPLED DELTA-DOPED WELLS, Applied physics letters, 62(26), 1993, pp. 3455-3457
Risultati: 1-12 |