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Results: 1-15 |
Results: 15
DOPANT ELECTROMIGRATION IN SEMICONDUCTORS
Authors: CAHEN D CHERNYAK L
Citation: D. Cahen et L. Chernyak, DOPANT ELECTROMIGRATION IN SEMICONDUCTORS, Advanced materials, 9(11), 1997, pp. 861
THE INTEGRAL AS AN ANALOGY OF REASON - TE LEOLOGY IN KANT
Authors: CHERNYAK L
Citation: L. Chernyak, THE INTEGRAL AS AN ANALOGY OF REASON - TE LEOLOGY IN KANT, Voprosy filosofii, (1), 1997, pp. 120-137
DIRECT EVIDENCE FOR DIFFUSION AND ELECTROMIGRATION OF CU IN CUINSE2
Authors: GARTSMAN K CHERNYAK L LYAHOVITSKAYA V CAHEN D DIDIK V KOZLOVSKY V MALKOVICH R SKORYATINA E USACHEVA V
Citation: K. Gartsman et al., DIRECT EVIDENCE FOR DIFFUSION AND ELECTROMIGRATION OF CU IN CUINSE2, Journal of applied physics, 82(9), 1997, pp. 4282-4285
TRANSPORT ANISOTROPY IN SPONTANEOUSLY ORDERED GAINP2 ALLOYS
Authors: CHERNYAK L OSINSKY A TEMKIN H MINTAIROV A MALKINA IG ZVONKOV BN SAFANOV YN
Citation: L. Chernyak et al., TRANSPORT ANISOTROPY IN SPONTANEOUSLY ORDERED GAINP2 ALLOYS, Applied physics letters, 70(18), 1997, pp. 2425-2427
VOLTAGE-DRIVEN DOPING OF MIXED IONIC ELECTRONIC SEMICONDUCTORS
Authors: CHERNYAK L VEDEL J CAHEN D
Citation: L. Chernyak et al., VOLTAGE-DRIVEN DOPING OF MIXED IONIC ELECTRONIC SEMICONDUCTORS, Solid state ionics, 83(1-2), 1996, pp. 29-33
ELECTRONIC EFFECTS OF ION MOBILITY IN SEMICONDUCTORS - MIXED ELECTRONIC-IONIC BEHAVIOR AND DEVICE CREATION IN SI-LI
Authors: CHERNYAK L LYAKHOVITSKAYA V RICHTER S JAKUBOWICZ A MANASSEN Y COHEN SR CAHEN D
Citation: L. Chernyak et al., ELECTRONIC EFFECTS OF ION MOBILITY IN SEMICONDUCTORS - MIXED ELECTRONIC-IONIC BEHAVIOR AND DEVICE CREATION IN SI-LI, Journal of applied physics, 80(5), 1996, pp. 2749-2762
JUNCTION SHARPNESS IN FIELD-INDUCED TRANSISTOR STRUCTURES IN CUXAG1-XINSE2
Authors: MCALPINE NS MCCONVILLE P HANEMAN D CHERNYAK L CAHEN D
Citation: Ns. Mcalpine et al., JUNCTION SHARPNESS IN FIELD-INDUCED TRANSISTOR STRUCTURES IN CUXAG1-XINSE2, Journal of applied physics, 79(9), 1996, pp. 7370-7372
HIGH-QUALITY GAN-INGAN HETEROSTRUCTURES GROWN ON (111)SILICON SUBSTRATES
Authors: YANG JW SUN CJ CHEN Q ANWAR MZ KHAN MA NIKISHIN SA SERYOGIN GA OSINSKY AV CHERNYAK L TEMKIN H HU CM MAHAJAN S
Citation: Jw. Yang et al., HIGH-QUALITY GAN-INGAN HETEROSTRUCTURES GROWN ON (111)SILICON SUBSTRATES, Applied physics letters, 69(23), 1996, pp. 3566-3568
EFFECT OF SULFUR DOPING ON OPTICAL ANISOTROPY OF CDSIAS2
Authors: OSINSKY A CHERNYAK L TEMKIN H WEN YC PARKINSON BA
Citation: A. Osinsky et al., EFFECT OF SULFUR DOPING ON OPTICAL ANISOTROPY OF CDSIAS2, Applied physics letters, 69(19), 1996, pp. 2867-2869
ELECTRON-BEAM-INDUCED CURRENT MEASUREMENTS OF MINORITY-CARRIER DIFFUSION LENGTH IN GALLIUM NITRIDE
Authors: CHERNYAK L OSINSKY A TEMKIN H YANG JW CHEN Q KHAN MA
Citation: L. Chernyak et al., ELECTRON-BEAM-INDUCED CURRENT MEASUREMENTS OF MINORITY-CARRIER DIFFUSION LENGTH IN GALLIUM NITRIDE, Applied physics letters, 69(17), 1996, pp. 2531-2533
JUNCTION ELECTROLUMINESCENCE FROM MICROSCOPIC DIODE STRUCTURES IN CUINSE2, PREPARED BY ELECTRIC FIELD-ASSISTED DOPING
Authors: CHERNYAK L JAKUBOWICZ A CAHEN D
Citation: L. Chernyak et al., JUNCTION ELECTROLUMINESCENCE FROM MICROSCOPIC DIODE STRUCTURES IN CUINSE2, PREPARED BY ELECTRIC FIELD-ASSISTED DOPING, Advanced materials, 7(1), 1995, pp. 45-48
ELECTRONIC EFFECTS OF ION MOBILITY IN SEMICONDUCTORS - SEMIONIC BEHAVIOR OF CUINSE2
Authors: CHERNYAK L GARTSMAN K CAHEN D STAFSUDD OM
Citation: L. Chernyak et al., ELECTRONIC EFFECTS OF ION MOBILITY IN SEMICONDUCTORS - SEMIONIC BEHAVIOR OF CUINSE2, Journal of physics and chemistry of solids, 56(9), 1995, pp. 1165-1191
LOW-TEMPERATURE DEVICE CREATION IN SI VIA FAST LI ELECTROMIGRATION
Authors: CHERNYAK L LYAKHOVITSKAYA V CAHEN D
Citation: L. Chernyak et al., LOW-TEMPERATURE DEVICE CREATION IN SI VIA FAST LI ELECTROMIGRATION, Applied physics letters, 66(6), 1995, pp. 709-711
LOCAL TEMPERATURE INCREASES DURING ELECTRIC-FIELD-INDUCED TRANSISTOR FORMATION IN CUINSE2
Authors: CHERNYAK L CAHEN D ZHAO S HANEMAN D
Citation: L. Chernyak et al., LOCAL TEMPERATURE INCREASES DURING ELECTRIC-FIELD-INDUCED TRANSISTOR FORMATION IN CUINSE2, Applied physics letters, 65(4), 1994, pp. 427-429
ROOM-TEMPERATURE TAILORING OF ELECTRICAL-PROPERTIES OF TERNARY AND MULTINARY CHALCOGENIDE SEMICONDUCTORS
Authors: CAHEN D CHERNYAK L GARTSMAN K LYUBOMIRSKY I TRIBOULET R
Citation: D. Cahen et al., ROOM-TEMPERATURE TAILORING OF ELECTRICAL-PROPERTIES OF TERNARY AND MULTINARY CHALCOGENIDE SEMICONDUCTORS, JPN J A P 1, 32, 1993, pp. 660-661
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