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Results: 1-25/41
Authors:
CHOW DH
HAFIZI M
STANCHINA WE
ROTH JA
ZINCK JJ
DUBRAY JJ
DUNLAP HL
Citation: Dh. Chow et al., MONOLITHIC INTEGRATION OF RESONANT-TUNNELING DIODES AND HETEROJUNCTION BIPOLAR-TRANSISTORS ON PATTERNED INP SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1413-1416
Authors:
BOLOGNESI CR
DVORAK MW
CHOW DH
Citation: Cr. Bolognesi et al., HIGH-TRANSCONDUCTANCE DELTA-DOPED INAS ALSB HFETS WITH ULTRATHIN SILICON-DOPED INAS QUANTUM-WELL DONOR LAYER/, IEEE electron device letters, 19(3), 1998, pp. 83-85
Authors:
BOLOGNESI CR
DVORAK MW
CHOW DH
Citation: Cr. Bolognesi et al., INAS ALSB HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS USING A SI-DOPED INAS/ALSB SHORT-PERIOD SUPERLATTICE MODULATION DOPING BARRIER/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 843-845
Authors:
BOLOGNESI CR
DVORAK MW
CHOW DH
Citation: Cr. Bolognesi et al., GATE METALLURGY EFFECTS IN INAS ALSB HFETS - PRELIMINARY-RESULTS AND DEMONSTRATION OF SURFACE FERMI-LEVEL SHIFTS/, Journal of electronic materials, 27(8), 1998, pp. 54-57
Authors:
YOUNG MH
CHOW DH
HUNTER AT
MILES RH
Citation: Mh. Young et al., RECENT ADVANCES IN GA1-XINXSB INAS SUPERLATTICE IR DETECTOR MATERIALS/, Applied surface science, 123, 1998, pp. 395-399
Authors:
OLESBERG JT
ANSON SA
MCCAHON SW
FLATTE ME
BOGGESS TF
CHOW DH
HASENBERG TC
Citation: Jt. Olesberg et al., EXPERIMENTAL AND THEORETICAL DENSITY-DEPENDENT ABSORPTION-SPECTRA IN (GAINSB INAS)/ALGASB SUPERLATTICE MULTIPLE-QUANTUM WELLS/, Applied physics letters, 72(2), 1998, pp. 229-231
Authors:
BOLOGNESI CR
DVORAK MW
CHOW DH
Citation: Cr. Bolognesi et al., SIDEGATING-INDUCED NEGATIVE DIFFERENTIAL RESISTANCE IN MBE-GROWN INASALSB HFETS/, JPN J A P 1, 36(3B), 1997, pp. 1789-1794
Authors:
DELYON TJ
ROTH JA
CHOW DH
Citation: Tj. Delyon et al., SUBSTRATE-TEMPERATURE MEASUREMENT BY ABSORPTION-EDGE SPECTROSCOPY DURING MOLECULAR-BEAM EPITAXY OF NARROW-BAND GAP SEMICONDUCTOR-FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 329-336
Authors:
ZINCK JJ
CHOW DH
Citation: Jj. Zinck et Dh. Chow, EFFECTS OF MORPHOLOGY ON PHOTOEMISSION OSCILLATION MEASUREMENTS DURING GROWTH OF RESONANT-TUNNELING DEVICES, Journal of crystal growth, 175, 1997, pp. 323-327
Authors:
WILLIAMSON W
ENQUIST SB
CHOW DH
DUNLAP HL
SUBRAMANIAM S
LEI PM
BERNSTEIN GH
GILBERT BK
Citation: W. Williamson et al., 12 GHZ CLOCKED OPERATION OF ULTRALOW POWER INTERBAND RESONANT-TUNNELING DIODE PIPELINED LOGIC GATES, IEEE journal of solid-state circuits, 32(2), 1997, pp. 222-231
Authors:
FELIX CL
BEWLEY WW
VURGAFTMAN I
MEYER JR
GOLDBERG L
CHOW DH
SELVIG E
Citation: Cl. Felix et al., MIDINFRARED VERTICAL-CAVITY SURFACE-EMITTING LASER, Applied physics letters, 71(24), 1997, pp. 3483-3485
Authors:
WALACHOVA J
ZELINKA J
VANIS J
CHOW DH
SCHULMAN JN
KARAMAZOV S
CUKR M
ZICH P
KRAL J
MCGILL TC
Citation: J. Walachova et al., PROBING OF INAS ALSB DOUBLE-BARRIER HETEROSTRUCTURES BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY/, Applied physics letters, 70(26), 1997, pp. 3588-3590
Authors:
LEI PM
SUBRAMANIAM S
BERNSTEIN GH
WILLIAMSON W
GILBERT BK
CHOW DH
Citation: Pm. Lei et al., PROCESS TECHNOLOGY FOR MONOLITHIC HIGH-SPEED SCHOTTKY RESONANT TUNNELING DIODE LOGIC INTEGRATED-CIRCUITS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3497-3501
Authors:
ZINCK JJ
CHOW DH
SCHULMAN J
Citation: Jj. Zinck et al., PHOTOEMISSION OSCILLATIONS AS AN IN-SITU MONITOR OF LAYER THICKNESS WITH MONOLAYER RESOLUTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2163-2165
Authors:
BREWER PD
CHOW DH
MILES RH
Citation: Pd. Brewer et al., ATOMIC ANTIMONY FOR MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY III-V SEMICONDUCTOR ALLOYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2335-2338
Authors:
SCHULMAN JN
SANTOS HJD
CHOW DH
Citation: Jn. Schulman et al., PHYSICS-BASED RTD CURRENT-VOLTAGE EQUATION, IEEE electron device letters, 17(5), 1996, pp. 220-222
Authors:
CHOW DH
DUNLAP HL
WILLIAMSON W
ENQUIST S
GILBERT BK
SUBRAMANIAM S
LEI PM
BERNSTEIN GH
Citation: Dh. Chow et al., INAS ALSB/GASB RESONANT INTERBAND TUNNELING DIODES AND AU-ON-INAS/ALSB-SUPERLATTICE SCHOTTKY DIODES FOR LOGIC-CIRCUITS/, IEEE electron device letters, 17(2), 1996, pp. 69-71
Authors:
BOLOGNESI CR
CHOW DH
Citation: Cr. Bolognesi et Dh. Chow, INAS ALSB DUAL-GATE HFETS, IEEE electron device letters, 17(11), 1996, pp. 534-536
Authors:
DVORAK MW
BOLOGNESI CR
CHOW DH
Citation: Mw. Dvorak et al., DEMONSTRATION OF NAND LOGIC SWITCHING IN INAS ALSB DUAL-GATE HFETS/, Electronics Letters, 32(24), 1996, pp. 2273-2274
Authors:
BOLOGNESI CR
BRYCE JE
CHOW DH
Citation: Cr. Bolognesi et al., INAS CHANNEL HETEROSTRUCTURE-FIELD EFFECT TRANSISTORS WITH INAS AISB SHORT-PERIOD SUPERLATTICE BARRIERS/, Applied physics letters, 69(23), 1996, pp. 3531-3533
Authors:
MCCAHON SW
ANSON SA
JANG DJ
FLATTE ME
BOGGESS TF
CHOW DH
HASENBERG TC
GREIN CH
Citation: Sw. Mccahon et al., CARRIER RECOMBINATION DYNAMICS IN A (GAINSB INAS)/ALGASB SUPERLATTICEMULTIPLE-QUANTUM-WELL/, Applied physics letters, 68(15), 1996, pp. 2135-2137
Authors:
ZINCK JJ
CHOW DH
SCHULMAN JN
DUNLAP HL
Citation: Jj. Zinck et al., PHOTOEMISSION OSCILLATION MEASUREMENT OF BARRIER THICKNESS FOR INAS ALSB RESONANT-TUNNELING DIODES/, Applied physics letters, 68(10), 1996, pp. 1406-1408
Authors:
ZHANG YH
MILES RH
CHOW DH
Citation: Yh. Zhang et al., INAS-INASXSB1-X TYPE-II SUPERLATTICE MIDWAVE INFRARED-LASERS GROWN ONINAS SUBSTRATES, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 749-756
Authors:
MEYER JR
HOFFMAN CA
OMAGGIO JP
YOUNGDALE ER
BARTOLI FJ
MILES RH
CHOW DH
RAMMOHAN LR
Citation: Jr. Meyer et al., BAND-STRUCTURE, MAGNETOTRANSPORT, AND MAGNETOOPTICAL PROPERTIES OF INAS-GA1-XINXSB SUPERLATTICES, Journal of electronic materials, 24(5), 1995, pp. 551-557
Authors:
ALLEN SJ
CRAIG K
GALDRIKIAN B
HEYMAN JN
KAMINSKI JP
SCOTT JS
SHERWIN MS
UNTERRAINER K
WANKE M
CAMPMAN K
HOPKINS PF
GOSSARD AC
CHOW DH
LUI M
LUI TK
Citation: Sj. Allen et al., MATERIALS SCIENCE IN THE FAR-IR WITH ELECTROSTATIC BASED FELS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 358(1-3), 1995, pp. 536-539