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Results: 1-25 | 26-50 | 51-51
Results: 1-25/51
X-RAY-DIFFRACTION ANALYSIS OF SIGE SI HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES/
Authors: MOONEY PM OTT JA CHU JO JORDANSWEET JL
Citation: Pm. Mooney et al., X-RAY-DIFFRACTION ANALYSIS OF SIGE SI HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES/, Applied physics letters, 73(7), 1998, pp. 924-926
NEW COMPLIMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY WITH SELF-ALIGNED SCHOTTKY SOURCE DRAIN AND LOW-RESISTANCE T-GATES/
Authors: RISHTON SA ISMAIL K CHU JO CHAN KK LEE KY
Citation: Sa. Rishton et al., NEW COMPLIMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY WITH SELF-ALIGNED SCHOTTKY SOURCE DRAIN AND LOW-RESISTANCE T-GATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2795-2798
OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL CONDUCTANCE TRANSISTOR FABRICATED IN A STRAINED SI QUANTUM-WELL
Authors: KOESTER SJ ISMAIL K LEE KY CHU JO
Citation: Sj. Koester et al., OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL CONDUCTANCE TRANSISTOR FABRICATED IN A STRAINED SI QUANTUM-WELL, IEEE electron device letters, 18(9), 1997, pp. 432-434
INTEGRATED ENHANCEMENT-MODE AND DEPLETION-MODE FET IN MODULATION-DOPED SI SIGE HETEROSTRUCTURES/
Authors: ISMAIL K CHU JO ARAFA M
Citation: K. Ismail et al., INTEGRATED ENHANCEMENT-MODE AND DEPLETION-MODE FET IN MODULATION-DOPED SI SIGE HETEROSTRUCTURES/, IEEE electron device letters, 18(9), 1997, pp. 435-437
DETERMINATION OF SPIN-SPLIT AND VALLEY-SPLIT ENERGY-LEVELS IN STRAINED SI QUANTUM-WELLS
Authors: KOESTER SJ ISMAIL K CHU JO
Citation: Sj. Koester et al., DETERMINATION OF SPIN-SPLIT AND VALLEY-SPLIT ENERGY-LEVELS IN STRAINED SI QUANTUM-WELLS, Semiconductor science and technology, 12(4), 1997, pp. 384-388
ELECTRICAL CHARACTERIZATION OF SI SI0.7GE0.3 QUANTUM-WELL WIRES FABRICATED BY LOW DAMAGE CF4 REACTIVE ION ETCHING/
Authors: LEE KY KOESTER SJ ISMAIL K CHU JO
Citation: Ky. Lee et al., ELECTRICAL CHARACTERIZATION OF SI SI0.7GE0.3 QUANTUM-WELL WIRES FABRICATED BY LOW DAMAGE CF4 REACTIVE ION ETCHING/, Microelectronic engineering, 35(1-4), 1997, pp. 33-36
SUBMICROMETER P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS FOR HIGH-SPEED APPLICATIONS
Authors: ADESIDA I ARAFA M ISMAIL K CHU JO MEYERSON BS
Citation: I. Adesida et al., SUBMICROMETER P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS FOR HIGH-SPEED APPLICATIONS, Microelectronic engineering, 35(1-4), 1997, pp. 257-260
AN MOS-TRANSISTOR WITH SCHOTTKY SOURCE DRAIN CONTACTS AND A SELF-ALIGNED LOW-RESISTANCE T-GATE/
Authors: RISHTON SA ISMAIL K CHU JO CHAN K
Citation: Sa. Rishton et al., AN MOS-TRANSISTOR WITH SCHOTTKY SOURCE DRAIN CONTACTS AND A SELF-ALIGNED LOW-RESISTANCE T-GATE/, Microelectronic engineering, 35(1-4), 1997, pp. 361-363
QUANTUM-CONFINED BIEXCITONS IN SI1-XGEX GROWN ON SI(001)
Authors: SHUM K MOONEY PM TILLY LP CHU JO
Citation: K. Shum et al., QUANTUM-CONFINED BIEXCITONS IN SI1-XGEX GROWN ON SI(001), Physical review. B, Condensed matter, 55(19), 1997, pp. 13058-13061
DEFECT STATES IN STRAIN-RELAXED SI0.7GE0.3 LAYERS GROWN AT LOW-TEMPERATURE
Authors: MOONEY PM TILLY L DEMIC CP CHU JO CARDONE F LEGOUES FK MEYERSON BS
Citation: Pm. Mooney et al., DEFECT STATES IN STRAIN-RELAXED SI0.7GE0.3 LAYERS GROWN AT LOW-TEMPERATURE, Journal of applied physics, 82(2), 1997, pp. 688-695
DISLOCATION-RELATED PHOTOLUMINESCENCE PEAK SHIFT DUE TO ATOMIC INTERDIFFUSION IN SIGE SI/
Authors: SHUM K MOONEY PM CHU JO
Citation: K. Shum et al., DISLOCATION-RELATED PHOTOLUMINESCENCE PEAK SHIFT DUE TO ATOMIC INTERDIFFUSION IN SIGE SI/, Applied physics letters, 71(8), 1997, pp. 1074-1076
NEGATIVE DIFFERENTIAL CONDUCTANCE IN STRAINED SI POINT CONTACTS AND WIRES
Authors: KOESTER SJ ISMAIL K LEE KY CHU JO
Citation: Sj. Koester et al., NEGATIVE DIFFERENTIAL CONDUCTANCE IN STRAINED SI POINT CONTACTS AND WIRES, Applied physics letters, 71(11), 1997, pp. 1528-1530
NEGATIVE DIFFERENTIAL CONDUCTANCE IN LATERAL DOUBLE-BARRIER TRANSISTORS FABRICATED IN STRAINED SI QUANTUM-WELLS
Authors: KOESTER SJ ISMAIL K LEE KY CHU JO
Citation: Sj. Koester et al., NEGATIVE DIFFERENTIAL CONDUCTANCE IN LATERAL DOUBLE-BARRIER TRANSISTORS FABRICATED IN STRAINED SI QUANTUM-WELLS, Applied physics letters, 70(18), 1997, pp. 2422-2424
LOW-TEMPERATURE TRANSPORT AND PHOTOCONDUCTIVITY RESPONSE OF HIGH-MOBILITY SI-SIGE HETEROSTRUCTURES IN STRONG MAGNETIC-FIELDS
Authors: CLARK RG DUNFORD RB FANG FF STADNIK VA MITCHELL EE NEWBURY R MCKENZIE RH STARRETT RP SKOUGAREVSKY AV CHU JO ISMAIL KE MEYERSON BS
Citation: Rg. Clark et al., LOW-TEMPERATURE TRANSPORT AND PHOTOCONDUCTIVITY RESPONSE OF HIGH-MOBILITY SI-SIGE HETEROSTRUCTURES IN STRONG MAGNETIC-FIELDS, Physica. B, Condensed matter, 216(3-4), 1996, pp. 388-392
DC AND RF PERFORMANCE OF 0.25 MU-M P-TYPE SIGE MODFET
Authors: ARAFA M FAY P ISMAIL K CHU JO MEYERSON BS ADESIDA I
Citation: M. Arafa et al., DC AND RF PERFORMANCE OF 0.25 MU-M P-TYPE SIGE MODFET, IEEE electron device letters, 17(9), 1996, pp. 449-451
HIGH-SPEED P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS
Authors: ARAFA M FAY P ISMAIL K CHU JO MEYERSON BS ADESIDA I
Citation: M. Arafa et al., HIGH-SPEED P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS, IEEE electron device letters, 17(3), 1996, pp. 124-126
A 70-GHZ F(T) LOW OPERATING BIAS SELF-ALIGNED P-TYPE SIGE MODFET
Authors: ARAFA M ISMAIL K CHU JO MEYERSON BS ADESIDA I
Citation: M. Arafa et al., A 70-GHZ F(T) LOW OPERATING BIAS SELF-ALIGNED P-TYPE SIGE MODFET, IEEE electron device letters, 17(12), 1996, pp. 586-588
WEAK-LOCALIZATION IN BACK-GATED SI SI0.7GE0.3 QUANTUM-WELL WIRES FABRICATED BY REACTIVE ION ETCHING/
Authors: KOESTER SJ ISMAIL K LEE KY CHU JO
Citation: Sj. Koester et al., WEAK-LOCALIZATION IN BACK-GATED SI SI0.7GE0.3 QUANTUM-WELL WIRES FABRICATED BY REACTIVE ION ETCHING/, Physical review. B, Condensed matter, 54(15), 1996, pp. 10604-10608
LOW-TEMPERATURE MAGNETOTRANSPORT OF 2D ELECTRON AND HOLE SYSTEMS IN HIGH-MOBILITY SI-SI1-XGEX HETEROCTRUCTURES
Authors: DUNFORD RB NEWBURY R STADNIK VA FANG FF CLARK RG MCKENZIE RH STARRETT RP MITCHELL EE WANG PJ CHU JO ISMAIL KE MEYERSON BS
Citation: Rb. Dunford et al., LOW-TEMPERATURE MAGNETOTRANSPORT OF 2D ELECTRON AND HOLE SYSTEMS IN HIGH-MOBILITY SI-SI1-XGEX HETEROCTRUCTURES, Surface science, 362(1-3), 1996, pp. 550-555
UNIQUE X-RAY-DIFFRACTION PATTERN AT GRAZING-INCIDENCE FROM MISFIT DISLOCATIONS IN SIGE THIN-FILMS
Authors: JORDANSWEET JL MOONEY PM LUTZ MA FEENSTRA RM CHU JO LEGOUES FK
Citation: Jl. Jordansweet et al., UNIQUE X-RAY-DIFFRACTION PATTERN AT GRAZING-INCIDENCE FROM MISFIT DISLOCATIONS IN SIGE THIN-FILMS, Journal of applied physics, 80(1), 1996, pp. 89-96
THERMAL-STABILITY OF UNDOPED STRAINED SI CHANNEL SIGE HETEROSTRUCTURES
Authors: KLAUK H JACKSON TN NELSON SF CHU JO
Citation: H. Klauk et al., THERMAL-STABILITY OF UNDOPED STRAINED SI CHANNEL SIGE HETEROSTRUCTURES, Applied physics letters, 68(14), 1996, pp. 1975-1977
ROUGHNESS ANALYSIS OF SI SIGE HETEROSTRUCTURES/
Authors: FEENSTRA RM LUTZ MA STERN F ISMAIL K MOONEY PM LEGOUES FK STANIS C CHU JO MEYERSON BS
Citation: Rm. Feenstra et al., ROUGHNESS ANALYSIS OF SI SIGE HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1608-1612
FABRICATION OF AHARONOV-BOHM RINGS IN SI SIGE HETEROSTRUCTURE/
Authors: LEE KY ISMAIL K CHU JO GAO WX WASHBURN S
Citation: Ky. Lee et al., FABRICATION OF AHARONOV-BOHM RINGS IN SI SIGE HETEROSTRUCTURE/, Microelectronic engineering, 27(1-4), 1995, pp. 79-82
SCANNING-TUNNELING-MICROSCOPY OF IN-SITU CLEAVED AND HYDROGEN PASSIVATED SI(110) CROSS-SECTIONAL SURFACES
Authors: LUTZ MA FEENSTRA RM CHU JO
Citation: Ma. Lutz et al., SCANNING-TUNNELING-MICROSCOPY OF IN-SITU CLEAVED AND HYDROGEN PASSIVATED SI(110) CROSS-SECTIONAL SURFACES, Surface science, 328(3), 1995, pp. 215-226
FQHE STATES OF HIGH-MOBILITY N-SI SI1-XGEX HETEROSTRUCTURES IN PULSEDMAGNETIC-FIELDS/
Authors: DUNFORD RB NEWBURY R FANG FF CLARK RG STARRETT RP CHU JO ISMAIL KE MEYERSON BS
Citation: Rb. Dunford et al., FQHE STATES OF HIGH-MOBILITY N-SI SI1-XGEX HETEROSTRUCTURES IN PULSEDMAGNETIC-FIELDS/, Solid state communications, 96(2), 1995, pp. 57-60
Risultati: 1-25 | 26-50 | 51-51