AAAAAA

   
Results: 1-12 |
Results: 12
STUDY OF RECOMBINATION PROPERTIES OF NEUTRON TRANSMUTATION DOPED SILICON-WAFERS
Authors: GAUBAS E VANHELLEMONT J SIMOEN E CLAUWS P KRANER HW VILKELIS G SMILGA AP
Citation: E. Gaubas et al., STUDY OF RECOMBINATION PROPERTIES OF NEUTRON TRANSMUTATION DOPED SILICON-WAFERS, Semiconductor science and technology, 12(9), 1997, pp. 1092-1099
A STUDY OF ELECTRICALLY ACTIVE DEFECTS CREATED IN P-INP BY CH4-H-2 REACTIVE ION ETCHING
Authors: GOUBERT L VANMEIRHAEGHE RL CLAUWS P CARDON F VANDAELE P
Citation: L. Goubert et al., A STUDY OF ELECTRICALLY ACTIVE DEFECTS CREATED IN P-INP BY CH4-H-2 REACTIVE ION ETCHING, Journal of applied physics, 82(4), 1997, pp. 1696-1699
OPTICAL DEEP-LEVEL TRANSIENT SPECTROSCOPY OF MINORITY-CARRIER TRAPS IN N-TYPE HIGH-PURITY GERMANIUM
Authors: BLONDEEL A CLAUWS P VYNCKE D
Citation: A. Blondeel et al., OPTICAL DEEP-LEVEL TRANSIENT SPECTROSCOPY OF MINORITY-CARRIER TRAPS IN N-TYPE HIGH-PURITY GERMANIUM, Journal of applied physics, 81(10), 1997, pp. 6767-6772
INFLUENCE OF OXYGEN AND CARBON ON THE GENERATION AND ANNIHILATION OF RADIATION DEFECTS IN SILICON
Authors: TRAUWAERT MA VANHELLEMONT J MAES HE VANBAVEL AM LANGOUCHE G STESMANS A CLAUWS P
Citation: Ma. Trauwaert et al., INFLUENCE OF OXYGEN AND CARBON ON THE GENERATION AND ANNIHILATION OF RADIATION DEFECTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 196-199
OXYGEN RELATED DEFECTS IN GERMANIUM
Authors: CLAUWS P
Citation: P. Clauws, OXYGEN RELATED DEFECTS IN GERMANIUM, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 213-220
IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE
Authors: OHYAMA H VANHELLEMONT J TAKAMI Y HAYAMA K SUNAGA H POORTMANS J CAYMAX M CLAUWS P
Citation: H. Ohyama et al., IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE, Materials science and technology, 11(4), 1995, pp. 429-435
LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES
Authors: TRAUWAERT MA VANHELLEMONT J MAES HE VANBAVEL AM LANGOUCHE G CLAUWS P
Citation: Ma. Trauwaert et al., LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES, Applied physics letters, 66(22), 1995, pp. 3057-3058
INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION
Authors: OHYAMA H VANHELLEMONT J SUNAGA H POORTMANS J CAYMAX M CLAUWS P
Citation: H. Ohyama et al., INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION, Physica status solidi. a, Applied research, 143(1), 1994, pp. 183-193
ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES
Authors: VANHELLEMONT J SIMOEN E CLAEYS C KANIAVA A GAUBAS E BOSMAN G JOHLANDER B ADAMS L CLAUWS P
Citation: J. Vanhellemont et al., ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1924-1931
GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEXEPITAXIAL DEVICES
Authors: OHYAMA H VANHELLEMONT J TAKAMI Y HAYAMA K SUNAGA H POORTMANS J CAYMAX M CLAUWS P
Citation: H. Ohyama et al., GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEXEPITAXIAL DEVICES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2437-2442
GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES
Authors: VANHELLEMONT J KANIAVA A SIMOEN E TRAUWAERT MA CLAEYS C JOHLANDER B HARBOESORENSEN R ADAMS L CLAUWS P
Citation: J. Vanhellemont et al., GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES, IEEE transactions on nuclear science, 41(3), 1994, pp. 479-486
ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES
Authors: OHYAMA H VANHELLEMONT J SUNAGA H POORTMANS J CAYMAX M CLAUWS P
Citation: H. Ohyama et al., ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES, IEEE transactions on nuclear science, 41(3), 1994, pp. 487-494
Risultati: 1-12 |