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TRANSMISSION ELECTRON-MICROSCOPY AND RELATED TECHNIQUES FOR SILICON-BASED MATERIALS CHARACTERIZATION
Authors:
CLAVERIE A
CASANOVE MJ
Citation: A. Claverie et Mj. Casanove, TRANSMISSION ELECTRON-MICROSCOPY AND RELATED TECHNIQUES FOR SILICON-BASED MATERIALS CHARACTERIZATION, Microelectronic engineering, 40(3-4), 1998, pp. 239-250
Authors:
BONAFOS C
MATHIOT D
CLAVERIE A
Citation: C. Bonafos et al., OSTWALD RIPENING OF END-OF-RANGE DEFECTS IN SILICON, Journal of applied physics, 83(6), 1998, pp. 3008-3017
Authors:
LAPORTE A
SARRABAYROUSE G
BENAMARA M
CLAVERIE A
ROCHER A
PEYRELAVIGNE A
Citation: A. Laporte et al., CHARGED DEFECTS AT THE INTERFACE BETWEEN DIRECTLY BONDED SILICON-WAFERS, JPN J A P 1, 36(9A), 1997, pp. 5502-5506
Authors:
CRISTIANO F
BONAFOS C
NEJIM A
LOMBARDO S
OMRI M
ALQUIER D
MARTINEZ A
CAMPISANO SU
HEMMENT PLF
CLAVERIE A
Citation: F. Cristiano et al., INTERSTITIAL TRAPPING EFFICIENCY OF C- CONTROL OF EOR DEFECTS( IMPLANTED INTO PREAMORPHISED SILICON ), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 22-26
Authors:
RIDGWAY MC
BELAY KB
LLEWELLYN DJ
CLAVERIE A
Citation: Mc. Ridgway et al., SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHISED GAAS IN THE PRESENCE OF IMPLANTATION-INDUCED MICROSCOPIC NONSTOICHIOMETRY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 423-427
Authors:
ASPAR B
BRUEL M
MORICEAU H
MALEVILLE C
POUMEYROL T
PAPON AM
CLAVERIE A
BENASSAYAG G
AUBERTONHERVE AJ
BARGE T
Citation: B. Aspar et al., BASIC MECHANISMS INVOLVED IN THE SMART-CUT(R) PROCESS, Microelectronic engineering, 36(1-4), 1997, pp. 233-240
Authors:
BONAFOS C
OMRI M
DEMAUDUIT B
BENASSAYAG G
CLAVERIE A
ALQUIER D
MARTINEZ A
MATHIOT D
Citation: C. Bonafos et al., TRANSIENT ENHANCED DIFFUSION OF BORON IN PRESENCE OF END-OF-RANGE DEFECTS, Journal of applied physics, 82(6), 1997, pp. 2855-2861
Authors:
BONAFOS C
CLAVERIE A
ALQUIER D
BERGAUD C
MARTINEZ A
LAANAB L
MATHIOT D
Citation: C. Bonafos et al., THE EFFECT OF THE BORON DOPING LEVEL ON THE THERMAL-BEHAVIOR OF END-OF-RANGE DEFECTS IN SILICON, Applied physics letters, 71(3), 1997, pp. 365-367
Authors:
BENAMARA M
ROCHER A
SOPENA P
CLAVERIE A
LAPORTE A
SARRABAYROUSE G
LESCOUZERES L
PEYRELAVIGNE A
Citation: M. Benamara et al., STRUCTURAL AND ELECTRICAL INVESTIGATIONS OF SILICON-WAFER BONDING INTERFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 164-167
Authors:
FAYE MM
ALTIBELLI A
BONAFOS C
CLAVERIE A
Citation: Mm. Faye et al., STOICHIOMETRIC DISTURBANCES IN MULTI-ATOMIC MULTILAYERED STRUCTURES DUE TO ION-IMPLANTATION THROUGH MASK OPENINGS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 52-55
Authors:
OMRI M
BONAFOS C
CLAVERIE A
NEJIM A
CRISTIANO F
ALQUIER D
MARTINEZ A
COWERN NEB
Citation: M. Omri et al., IS THERE AN EFFECT OF THE PROXIMITY OF A FREE-SURFACE ON THE FORMATION OF END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 5-8
Authors:
CRISTIANO F
NEJIM A
DEMAUDUIT B
CLAVERIE A
HEMMENT PLF
Citation: F. Cristiano et al., CHARACTERIZATION OF EXTENDED DEFECTS IN SIGE ALLOYS FORMED BY HIGH-DOSE GE+ IMPLANTATION INTO SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 156-160
Authors:
BONAFOS C
ALQUIER D
MARTINEZ A
MATHIOT D
CLAVERIE A
Citation: C. Bonafos et al., TED OF BORON IN THE PRESENCE OF EOR DEFECTS - THE USE OF THE THEORY OF OSTWALD RIPENING TO CALCULATE SI-INTERSTITIAL SUPERSATURATION IN THEVICINITY OF EXTRINSIC DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 129-132
Authors:
SIMON L
KUBLER L
BISCHOFF JL
BOLMONT D
FAURE J
CLAVERIE A
BALLADORE JL
Citation: L. Simon et al., EPITAXIAL-GROWTH OF SI1-YCY ALLOYS CHARACTERIZED AS SELF-ORGANIZED, ORDERED, NANOMETER-SIZED C-RICH AGGREGATES IN MONOCRYSTALLINE SI, Physical review. B, Condensed matter, 54(15), 1996, pp. 10559-10564
Authors:
FAYE MM
VIEU C
BENASSAYAG G
SALLES P
CLAVERIE A
Citation: Mm. Faye et al., LATERAL DAMAGE EXTENSION DURING MASKED ION-IMPLANTATION INTO GAAS, Journal of applied physics, 80(8), 1996, pp. 4303-4307
Authors:
DIANI M
MESLI A
KUBLER L
CLAVERIE A
BALLADORE JL
AUBEL D
PEYRE S
HEISER T
BISCHOFF JL
Citation: M. Diani et al., OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001), Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 110-113
Authors:
CLAVERIE A
LAANAB L
BONAFOS C
BERGAUD C
MARTINEZ A
MATHIOT D
Citation: A. Claverie et al., ON THE RELATION BETWEEN DOPANT ANOMALOUS DIFFUSION IN SI AND END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 202-209
Authors:
LAANAB L
BERGAUD C
BONAFOS C
MARTINEZ A
CLAVERIE A
Citation: L. Laanab et al., VARIATION OF END-OF-RANGE DENSITY WITH ION-BEAM ENERGY AND THE PREDICTIONS OF THE EXCESS INTERSTITIALS MODEL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 236-240
Authors:
CLAVERIE A
FUJIOKA H
LAANAB L
LILIENTALWEBER Z
WEBER ER
Citation: A. Claverie et al., SYNTHESIS OF SEMIINSULATING GAAS BY AS IMPLANTATION AND THERMAL ANNEALING - STRUCTURAL AND ELECTRICAL-PROPERTIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 327-330
Authors:
BONAFOS C
MARTINEZ A
FAYE MM
BERGAUD C
MATHIOT D
CLAVERIE A
Citation: C. Bonafos et al., TRANSIENT ENHANCED DIFFUSION OF DOPANT IN PREAMORPHISED SI - THE ROLEOF EOR DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 222-226
Authors:
CLAVERIE A
FAURE J
BALLADORE JL
SIMON L
MESLI A
DIANI M
KUBLER L
AUBEL D
Citation: A. Claverie et al., A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 157(1-4), 1995, pp. 420-425
Authors:
PICHLER P
RYSSEL H
PLOSS R
BONAFOS C
CLAVERIE A
Citation: P. Pichler et al., PHOSPHORUS-ENHANCED DIFFUSION OF ANTIMONY DUE TO GENERATION OF SELF-INTERSTITIALS, Journal of applied physics, 78(3), 1995, pp. 1623-1629
Authors:
PIZANI PS
MLAYAH A
GROENEN J
CARLES R
CLAVERIE A
Citation: Ps. Pizani et al., HIGH-STRAIN EFFECTS EVIDENCED BY RAMAN-SCATTERING IN ARSENIC CLUSTERSIN AS-IMPLANTED GAAS, Applied physics letters, 66(15), 1995, pp. 1927-1929
Authors:
FAURE J
CLAVERIE A
LAANAB L
BONHOMME P
Citation: J. Faure et al., RECRYSTALLIZATION OF BORON-DOPED AND UNDOPED PREAMORPHIZED SILICON LAYERS BY RAPID AND CONVENTIONAL THERMAL ANNEALING, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 128-132
Authors:
BENAMARA M
ROCHER A
LAANAB L
CLAVERIE A
LAPORTE A
SARRABAYROUSSE G
LESCOUZERES L
PEYRELAVIGNE A
Citation: M. Benamara et al., INTERFACIAL STRUCTURE OF BONDED SILICON O N SILICON-WAFERS, Comptes rendus de l'Academie des sciences. Serie 2, Mecanique, physique, chimie, sciences de l'univers, sciences de la terre, 318(11), 1994, pp. 1459-1464