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Results: 1-13 |

Results: 13

TRANSIENT ANALYSIS OF SILICON DEVICES USING THE HYDRODYNAMIC MODEL

Authors: COLALONGO L VALDINOCI M GNUDI A RUDAN M

Citation: L. Colalongo et al., TRANSIENT ANALYSIS OF SILICON DEVICES USING THE HYDRODYNAMIC MODEL, VLSI design (Print), 6(1-4), 1998, pp. 283-286

DETERMINATION OF HOT-CARRIER-INDUCED INTERFACE STATE DENSITY IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

Authors: MARIUCCI L FORTUNATO G CARLUCCIO R PECORA A GIOVANNINI S MASSUSSI F COLALONGO L VALDINOCI M

Citation: L. Mariucci et al., DETERMINATION OF HOT-CARRIER-INDUCED INTERFACE STATE DENSITY IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Journal of applied physics, 84(4), 1998, pp. 2341-2348

DYNAMIC MODELING OF AMORPHOUS-SILICON AND POLYCRYSTALLINE-SILICON DEVICES

Authors: COLALONGO L VALDINOCI M PELLEGRINI A RUDAN M

Citation: L. Colalongo et al., DYNAMIC MODELING OF AMORPHOUS-SILICON AND POLYCRYSTALLINE-SILICON DEVICES, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 826-833

NUMERICAL-ANALYSIS OF ELECTRICAL CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER CRYSTALLIZATION

Authors: MARIUCCI L GIACOMETTI F PECORA A MASSUSSI F FORTUNATO G VALDINOCI M COLALONGO L

Citation: L. Mariucci et al., NUMERICAL-ANALYSIS OF ELECTRICAL CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER CRYSTALLIZATION, Electronics Letters, 34(9), 1998, pp. 924-926

NUMERICAL-ANALYSIS OF ISFET AND LAPS DEVICES

Authors: VERZELLESI G COLALONGO L PASSERI D MARGESIN B RUDAN M SONCINI G CIAMPOLINI P

Citation: G. Verzellesi et al., NUMERICAL-ANALYSIS OF ISFET AND LAPS DEVICES, Sensors and actuators. B, Chemical, 44(1-3), 1997, pp. 402-408

ANALYSIS OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS UNDER STATIC AND DYNAMIC CONDITIONS

Authors: VALDINOCI M COLALONGO L BACCARANI G PECORA A POLICICCHIO I FORTUNATO G PLAIS F LEGAGNEUX P REITA C PRIBAT D

Citation: M. Valdinoci et al., ANALYSIS OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS UNDER STATIC AND DYNAMIC CONDITIONS, Solid-state electronics, 41(9), 1997, pp. 1363-1369

NUMERICAL-ANALYSIS OF POLY-TFTS UNDER OFF CONDITIONS

Authors: COLALONGO L VALDINOCI M BACCARANI G MIGLIORATO P TALLARIDA G REITA C

Citation: L. Colalongo et al., NUMERICAL-ANALYSIS OF POLY-TFTS UNDER OFF CONDITIONS, Solid-state electronics, 41(4), 1997, pp. 627-633

DYNAMIC-MODEL OF SILICON DEVICES WITH ENERGY-LOCALIZED TRAP CENTERS

Authors: VALDINOCI M COLALONGO L RUDAN M COFFA S

Citation: M. Valdinoci et al., DYNAMIC-MODEL OF SILICON DEVICES WITH ENERGY-LOCALIZED TRAP CENTERS, Microelectronics, 28(1), 1997, pp. 93-100

FLOATING BODY EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS

Authors: VALDINOCI M COLALONGO L BACCARANI G FORTUNATO G PECORA A POLICICCHIO I

Citation: M. Valdinoci et al., FLOATING BODY EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2234-2241

MODELING OF LIGHT-ADDRESSABLE POTENTIOMETRIC SENSORS

Authors: COLALONGO L VERZELLESI G PASSERI D LUI A CIAMPOLINI P RUDAN MV

Citation: L. Colalongo et al., MODELING OF LIGHT-ADDRESSABLE POTENTIOMETRIC SENSORS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2083-2090

INVESTIGATION ON ANOMALOUS LEAKAGE CURRENTS IN POLY-TFTS INCLUDING DYNAMIC EFFECTS

Authors: COLALONGO L VALDINOCI M BACCARANI G

Citation: L. Colalongo et al., INVESTIGATION ON ANOMALOUS LEAKAGE CURRENTS IN POLY-TFTS INCLUDING DYNAMIC EFFECTS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2106-2112

AC ANALYSIS OF AMORPHOUS-SILICON DEVICES

Authors: PELLEGRINI A COLALONGO L VALDINOCI M RUDAN M

Citation: A. Pellegrini et al., AC ANALYSIS OF AMORPHOUS-SILICON DEVICES, IEEE transactions on computer-aided design of integrated circuits and systems, 15(11), 1996, pp. 1324-1331

ANALYSIS OF CONDUCTIVITY DEGRADATION IN GOLD PLATINUM-DOPED SILICON/

Authors: VALDINOCI M COLALONGO L PELLEGRINI A RUDAN M

Citation: M. Valdinoci et al., ANALYSIS OF CONDUCTIVITY DEGRADATION IN GOLD PLATINUM-DOPED SILICON/, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2269-2275

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