Authors:
MELCHER RL
ALT PM
DOVE DB
CIPOLLA TM
COLGAN EG
DOANY FE
ENAMI K
HO KC
LOVAS I
NARAYAN C
OLYHA RS
POWELL CG
ROSENBLUTH AE
SANFORD JL
SCHLIG ES
SINGH RN
TOMOOKA T
UDA M
YANG KH
Citation: Rl. Melcher et al., DESIGN AND FABRICATION OF A PROTOTYPE PROJECTION DATA MONITOR WITH HIGH INFORMATION-CONTENT, IBM journal of research and development, 42(3-4), 1998, pp. 321-338
Citation: Eg. Colgan et M. Uda, ON-CHIP METALLIZATION LAYERS FOR REFLECTIVE LIGHT VALVES, IBM journal of research and development, 42(3-4), 1998, pp. 339-345
Authors:
COLGAN EG
ALT PM
WISNIEFF RL
FRYER PM
GALLIGAN EA
GRAHAM WS
GREIER PF
HORTON RR
IFILL H
JENKINS LC
JOHN RA
KAUFMAN RI
KUO Y
LANZETTA AP
LATZKO KF
LIBSCH FR
LIEN SCA
MILLMAN SE
NYWENING RW
POLASTRE RJ
POWELL CG
RAND RA
RITSKO JJ
ROTHWELL MB
STAPLES JL
WARREN KW
WILSON JS
WRIGHT SL
Citation: Eg. Colgan et al., A 10.5-IN-DIAGONAL SXGA ACTIVE-MATRIX DISPLAY, IBM journal of research and development, 42(3-4), 1998, pp. 427-444
Authors:
COLGAN EG
POLASTRE RJ
TAKEICHI M
WISNIEFF RL
Citation: Eg. Colgan et al., THIN-FILM-TRANSISTOR PROCESS-CHARACTERIZATION TEST STRUCTURES, IBM journal of research and development, 42(3-4), 1998, pp. 481-490
Authors:
TAKATSUJI H
COLGAN EG
CABRAL C
HARPER JME
Citation: H. Takatsuji et al., EVALUATION OF AL(ND)-ALLOY FILMS FOR APPLICATION TO THIN-FILM-TRANSISTOR LIQUID-CRYSTAL DISPLAYS, IBM journal of research and development, 42(3-4), 1998, pp. 501-508
Authors:
GAMBINO JP
COLGAN EG
DOMENICUCCI AG
CUNNINGHAM B
Citation: Jp. Gambino et al., THE THERMAL-STABILITY OF COSI2 ON POLYCRYSTALLINE SILICON - THE EFFECT OF SILICON GRAIN-SIZE AND METAL THICKNESS, Journal of the Electrochemical Society, 145(4), 1998, pp. 1384-1389
Citation: Jme. Harper et al., CONTROL OF INPLANE TEXTURE OF BODY-CENTERED-CUBIC METAL THIN-FILMS, Journal of applied physics, 82(9), 1997, pp. 4319-4326
Citation: Eg. Colgan et al., FORMATION AND STABILITY OF SILICIDES ON POLYCRYSTALLINE SILICON, Materials science & engineering. R, Reports, 16(2), 1996, pp. 43-96
Citation: Eg. Colgan et al., NICKEL SILICIDE THERMAL-STABILITY ON POLYCRYSTALLINE AND SINGLE-CRYSTALLINE SILICON, Materials chemistry and physics, 46(2-3), 1996, pp. 209-214
Citation: Eg. Colgan, ACTIVATION-ENERGY FOR NI2SI AND NISI FORMATION MEASURED OVER A WIDE-RANGE OF RAMP RATES, Thin solid films, 279(1-2), 1996, pp. 193-198
Citation: Eg. Colgan et Fm. Dheurle, KINETICS OF SILICIDE FORMATION MEASURED BY IN-SITU RAMPED RESISTANCE MEASUREMENTS, Journal of applied physics, 79(8), 1996, pp. 4087-4095
Authors:
HU CK
LEE KY
LEE KL
CABRAL C
COLGAN EG
STANIS C
Citation: Ck. Hu et al., ELECTROMIGRATION DRIFT VELOCITY IN AL-ALLOY AND CU-ALLOY LINES, Journal of the Electrochemical Society, 143(3), 1996, pp. 1001-1006
Citation: Eg. Colgan, ACTIVATION-ENERGY FOR PT2SI AND PTSI FORMATION MEASURED OVER A WIDE-RANGE OF RAMP RATES, Journal of materials research, 10(8), 1995, pp. 1953-1957
Citation: Eg. Colgan et al., ACTIVATION-ENERGY FOR COSI AND COSI2 FORMATION MEASURED DURING RAPID THERMAL ANNEALING, Journal of applied physics, 77(2), 1995, pp. 614-619
Citation: Tj. Licata et al., INTERCONNECT FABRICATION PROCESSES AND THE DEVELOPMENT OF LOW-COST WIRING FOR CMOS PRODUCTS, IBM journal of research and development, 39(4), 1995, pp. 419-435
Citation: Eg. Colgan et al., KINETICS OF AL GRAIN-GROWTH, AL2CU PRECIPITATION, AND DISSOLUTION IN BLANKET THIN-FILMS AND FINE LINES, Journal of applied physics, 76(5), 1994, pp. 2781-2790
Citation: Eg. Colgan et Kp. Rodbell, THE ROLE OF CU DISTRIBUTION AND AL2CU PRECIPITATION ON THE ELECTROMIGRATION RELIABILITY OF SUBMICROMETER AL(CU) LINES, Journal of applied physics, 75(7), 1994, pp. 3423-3434
Citation: Eg. Colgan et al., ACTIVATION-ENERGY FOR C94 AND C54 TISI2 FORMATION MEASURED DURING RAPID THERMAL ANNEALING, Applied physics letters, 65(16), 1994, pp. 2009-2011
Citation: Eg. Colgan, ACTIVATION-ENERGY FOR OSTWALD RIPENING OF AL2CU IN AL(4 WT-PERCENT CU) THIN-FILMS USING A LATERAL DIFFUSION COUPLE, Applied physics letters, 64(22), 1994, pp. 2952-2954