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Results: 1-22 |
Results: 22
DEFECTS IN GE-IMPLANTED SI STUDIED BY SLOW POSITRON IMPLANTATION SPECTROSCOPY()
Authors: KUNA SAE COLEMAN PG NEJIM A CRISTIANO F HEMMENT PLF
Citation: Sae. Kuna et al., DEFECTS IN GE-IMPLANTED SI STUDIED BY SLOW POSITRON IMPLANTATION SPECTROSCOPY(), Semiconductor science and technology, 13(4), 1998, pp. 394-398
MECHANICAL STRAIN AND DEFECTS IN THE END-OF-RANGE REGION IN SILICON IMPLANTED WITH GE-IMPLANTED WITH C+ IONS( AND CO)
Authors: SUPRUNBELEVICH Y CRISTIANO F NEJIM A HEMMENT PLF SEALY BJ
Citation: Y. Suprunbelevich et al., MECHANICAL STRAIN AND DEFECTS IN THE END-OF-RANGE REGION IN SILICON IMPLANTED WITH GE-IMPLANTED WITH C+ IONS( AND CO), Semiconductor science and technology, 13(2), 1998, pp. 220-225
EVOLUTION OF MECHANICAL STRAIN AND EXTENDED DEFECTS IN ANNEALED (100)SILICON SAMPLES IMPLANTED WITH GE+ IONS
Authors: SUPRUNBELEVICH Y CRISTIANO F NEJIM A HEMMENT PLF SEALY BJ
Citation: Y. Suprunbelevich et al., EVOLUTION OF MECHANICAL STRAIN AND EXTENDED DEFECTS IN ANNEALED (100)SILICON SAMPLES IMPLANTED WITH GE+ IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 140(1-2), 1998, pp. 91-98
RESIDUAL POST ANNEAL DAMAGE OF GE-COIMPLANTATION AND C-COIMPLANTATIONOF SI DETERMINED BY QUANTITATIVE RBS-CHANNELING
Authors: NEJIM A BARRADAS NP JEYNES C CRISTIANO F WENDLER E GARTNER K SEALY BJ
Citation: A. Nejim et al., RESIDUAL POST ANNEAL DAMAGE OF GE-COIMPLANTATION AND C-COIMPLANTATIONOF SI DETERMINED BY QUANTITATIVE RBS-CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 244-248
INTERSTITIAL TRAPPING EFFICIENCY OF C- CONTROL OF EOR DEFECTS( IMPLANTED INTO PREAMORPHISED SILICON )
Authors: CRISTIANO F BONAFOS C NEJIM A LOMBARDO S OMRI M ALQUIER D MARTINEZ A CAMPISANO SU HEMMENT PLF CLAVERIE A
Citation: F. Cristiano et al., INTERSTITIAL TRAPPING EFFICIENCY OF C- CONTROL OF EOR DEFECTS( IMPLANTED INTO PREAMORPHISED SILICON ), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 22-26
MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX
Authors: LARSEN AN ORAIFEARTAIGH C BARKLIE RC HOLM B PRIOLO F FRANZO G LULLI G BIANCONI M NIPOTI R LINDNER JKN MESLI A GROB JJ CRISTIANO F HEMMENT PLF
Citation: An. Larsen et al., MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX, Journal of applied physics, 81(5), 1997, pp. 2208-2218
ELEVATION IN THE RATIO OF CU ZN-SUPEROXIDE DISMUTASE TO GLUTATHIONE-PEROXIDASE ACTIVITY INDUCES FEATURES OF CELLULAR SENESCENCE AND THIS EFFECT IS MEDIATED BY HYDROGEN-PEROXIDE/
Authors: DEHAAN JB CRISTIANO F IANNELLO R BLADIER C KELNER MJ KOLA I
Citation: Jb. Dehaan et al., ELEVATION IN THE RATIO OF CU ZN-SUPEROXIDE DISMUTASE TO GLUTATHIONE-PEROXIDASE ACTIVITY INDUCES FEATURES OF CELLULAR SENESCENCE AND THIS EFFECT IS MEDIATED BY HYDROGEN-PEROXIDE/, Human molecular genetics, 5(2), 1996, pp. 283-292
HCV GENOTYPES AND SERUM RNA LEVELS IN HCV-RELATED CIRRHOSIS WITH OR WITHOUT HEPATOCELLULAR-CARCINOMA (HCC)
Authors: ADINOLFI LE UTILI R ANDREANA A RAGONE E CRISTIANO F TONZIELLO A MORMONE G GAMBARDELLA M BELLOPEDE P ROSARIO P MARRONE A RUGGIERO G
Citation: Le. Adinolfi et al., HCV GENOTYPES AND SERUM RNA LEVELS IN HCV-RELATED CIRRHOSIS WITH OR WITHOUT HEPATOCELLULAR-CARCINOMA (HCC), Hepatology, 24(4), 1996, pp. 107-107
IS THERE AN EFFECT OF THE PROXIMITY OF A FREE-SURFACE ON THE FORMATION OF END-OF-RANGE DEFECTS
Authors: OMRI M BONAFOS C CLAVERIE A NEJIM A CRISTIANO F ALQUIER D MARTINEZ A COWERN NEB
Citation: M. Omri et al., IS THERE AN EFFECT OF THE PROXIMITY OF A FREE-SURFACE ON THE FORMATION OF END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 5-8
CHARACTERIZATION OF EXTENDED DEFECTS IN SIGE ALLOYS FORMED BY HIGH-DOSE GE+ IMPLANTATION INTO SI
Authors: CRISTIANO F NEJIM A DEMAUDUIT B CLAVERIE A HEMMENT PLF
Citation: F. Cristiano et al., CHARACTERIZATION OF EXTENDED DEFECTS IN SIGE ALLOYS FORMED BY HIGH-DOSE GE+ IMPLANTATION INTO SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 156-160
2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX
Authors: ORAIFEARTAIGH C BARKLIE RC LARSEN AN PRIOLO F FRANZO G LULLI G BIANCONI M LINDNER JKN CRISTIANO F HEMMENT PLF
Citation: C. Oraifeartaigh et al., 2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 165-168
A STUDY OF BASE CONTACT FORMATION IN EPITAXIAL SI SI0.88GE0.12 HBT STRUCTURES/
Authors: NEJIM A CRISTIANO F HEMMENT PLF HOPE DAO GLASPER JL PICKERING C LEONG WY ROBBINS DJ
Citation: A. Nejim et al., A STUDY OF BASE CONTACT FORMATION IN EPITAXIAL SI SI0.88GE0.12 HBT STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 305-310
STRUCTURAL STUDIES OF ION-BEAM SYNTHESIZED SIGE SI HETEROSTRUCTURES FOR HBT APPLICATIONS/
Authors: CRISTIANO F NEJIM A HOPE DAO HOULTON MR HEMMENT PLF
Citation: F. Cristiano et al., STRUCTURAL STUDIES OF ION-BEAM SYNTHESIZED SIGE SI HETEROSTRUCTURES FOR HBT APPLICATIONS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 311-315
TRANSMISSION ELECTRON-MICROSCOPY AND SPECTROSCOPIC ELLIPSOMETRY STUDIES OF DAMAGE LAYER INDUCED BY LARGE TILT ANGLE ION-IMPLANTATION
Authors: HE ZP CRISTIANO F ZHOU ZY QIAN YH CHEN LY LIN CL HEMMENT PLF ZOU SC
Citation: Zp. He et al., TRANSMISSION ELECTRON-MICROSCOPY AND SPECTROSCOPIC ELLIPSOMETRY STUDIES OF DAMAGE LAYER INDUCED BY LARGE TILT ANGLE ION-IMPLANTATION, Journal of the Electrochemical Society, 143(8), 1996, pp. 2636-2640
CU ZN-SUPEROXIDE DISMUTASE AND GLUTATHIONE-PEROXIDASE DURING AGING/
Authors: DEHAAN JB CRISTIANO F IANNELLO RC KOLA I
Citation: Jb. Dehaan et al., CU ZN-SUPEROXIDE DISMUTASE AND GLUTATHIONE-PEROXIDASE DURING AGING/, Biochemistry and molecular biology international, 35(6), 1995, pp. 1281-1297
DOPANT ACTIVATION IN SB-IMPLANTED RELAXED SI1-XGEX ALLOY LAYERS GROWNON COMPOSITIONALLY GRADED BUFFERS
Authors: ORAIFEARTAIGH C LARSEN AN CRISTIANO F HEMMENT PLF
Citation: C. Oraifeartaigh et al., DOPANT ACTIVATION IN SB-IMPLANTED RELAXED SI1-XGEX ALLOY LAYERS GROWNON COMPOSITIONALLY GRADED BUFFERS, Applied physics A: Materials science & processing, 61(6), 1995, pp. 579-585
CONTROL OF DEFECTS IN C-PHASE REGROWTH(, GE+, AND ER+ IMPLANTED SI USING POST AMORPHIZATION AND SOLID)
Authors: CRISTIANO F ZHANG JP WILSON RJ GILLIN WP HEMMENT PLF
Citation: F. Cristiano et al., CONTROL OF DEFECTS IN C-PHASE REGROWTH(, GE+, AND ER+ IMPLANTED SI USING POST AMORPHIZATION AND SOLID), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 265-270
VISIBLE PHOTOLUMINESCENCE AT ROOM-TEMPERATURE FROM MICROCRYSTALLINE SILICON PRECIPITATES IN SIO2 FORMED BY ION-IMPLANTATION
Authors: KOMODA T KELLY J CRISTIANO F NEJIM A HEMMENT PLF HOMEWOOD KP GWILLIAM R MYNARD JE SEALY BJ
Citation: T. Komoda et al., VISIBLE PHOTOLUMINESCENCE AT ROOM-TEMPERATURE FROM MICROCRYSTALLINE SILICON PRECIPITATES IN SIO2 FORMED BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 387-391
CHANGES IN THE LEVELS OF ENZYMES WHICH MODULATE THE ANTIOXIDANT BALANCE OCCUR DURING AGING AND CORRELATE WITH CELLULAR-DAMAGE
Authors: CRISTIANO F DEHAAN JB IANNELLO RC KOLA I
Citation: F. Cristiano et al., CHANGES IN THE LEVELS OF ENZYMES WHICH MODULATE THE ANTIOXIDANT BALANCE OCCUR DURING AGING AND CORRELATE WITH CELLULAR-DAMAGE, Mechanism of ageing and development, 80(2), 1995, pp. 93-105
GE+ ION-IMPLANTATION - A COMPETING TECHNOLOGY
Authors: HEMMENT PLF CRISTIANO F NEJIM A LOMBARDO S LARSSEN KK PRIOLO F BARKLIE RC
Citation: Plf. Hemment et al., GE+ ION-IMPLANTATION - A COMPETING TECHNOLOGY, Journal of crystal growth, 157(1-4), 1995, pp. 147-160
REGROWTH BEHAVIOR OF SI1-XGEX SI STRUCTURES FORMED BY GE+ ION-IMPLANTATION AND POST AMORPHIZATION/
Authors: ZHANG JP WILSON RJ HEMMENT PLF CLAVERIE A CRISTIANO F SALLES P WEN JQ EVANS JH PEAKER AR PARKER GJ
Citation: Jp. Zhang et al., REGROWTH BEHAVIOR OF SI1-XGEX SI STRUCTURES FORMED BY GE+ ION-IMPLANTATION AND POST AMORPHIZATION/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 222-228
EXPRESSION OF COPPER-ZINC SUPEROXIDE-DISMUTASE AND GLUTATHIONE-PEROXIDASE IN ORGANS OF DEVELOPING MOUSE EMBRYOS, FETUSES, AND NEONATES
Authors: DEHAAN JB TYMMS MJ CRISTIANO F KOLA I
Citation: Jb. Dehaan et al., EXPRESSION OF COPPER-ZINC SUPEROXIDE-DISMUTASE AND GLUTATHIONE-PEROXIDASE IN ORGANS OF DEVELOPING MOUSE EMBRYOS, FETUSES, AND NEONATES, Pediatric research, 35(2), 1994, pp. 188-196
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