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Results:
1-13
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Results: 13
Authors:
CURRENT MI
LOPES D
FOAD MA
ENGLAND JG
JONES C
SU D
Citation: Mi. Current et al., 200 EV 10 KEV BORON IMPLANTATION AND RAPID THERMAL ANNEALING - SECONDARY-ION MASS-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 327-333
Authors:
CURRENT MI
LOPES D
FOAD M
BOYD W
Citation: Mi. Current et al., ULTRA-SHALLOW JUNCTION TECHNOLOGY FOR 100 NM CMOS - XR LEAP IMPLANTERAND RTP-CENTURA RAPID THERMAL ANNEALER, Materials chemistry and physics, 54(1-3), 1998, pp. 33-36
Authors:
CURRENT MI
OHNO N
HARA T
Citation: Mi. Current et al., SHALLOW JUNCTION FORMATION IN SI-DEVICES - DAMAGE ACCUMULATION AND THE ROLE OF PHOTOACOUSTIC PROBES AND MULTISPECIES IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 262-266
Authors:
CHASON E
PICRAUX ST
POATE JM
BORLAND JO
CURRENT MI
DELARUBIA TD
EAGLESHAM DJ
HOLLAND OW
LAW ME
MAGEE CW
MAYER JW
MELNGAILIS J
TASCH AF
Citation: E. Chason et al., ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION, Journal of applied physics, 81(10), 1997, pp. 6513-6561
Authors:
CURRENT MI
Citation: Mi. Current, ION-IMPLANTATION FOR SILICON DEVICE MANUFACTURING - A VACUUM PERSPECTIVE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1115-1123
Authors:
ITO H
KAMATA T
ENGLAND J
FOTHERINGHAM I
PLUMB F
CURRENT MI
Citation: H. Ito et al., THE PRECISION-IMPLANT-9500 PLASMA FLOOD SYSTEM - THE ADVANCED SOLUTION TO WAFER CHARGING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 30-33
Authors:
CURRENT MI
LUKASZEK W
VELLA MC
TRIPSAS NH
Citation: Mi. Current et al., SURFACE-CHARGE CONTROL DURING HIGH-CURRENT ION-IMPLANTATION - CHARACTERIZATION WITH CHARM-2 SENSORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 34-38
Authors:
VELLA MC
LUKASZEK W
CURRENT MI
TRIPSAS NH
Citation: Mc. Vella et al., PLASMA MODEL FOR CHARGING DAMAGE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 48-51
Authors:
CURRENT MI
MATHUR R
KUMP M
LARSON LA
Citation: Mi. Current et al., PROCESS SIMULATION CHALLENGES FOR ULSI DEVICES - A USERS PERSPECTIVE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 198-201
Authors:
STEVIE FA
WILSON RG
SIMONS DS
CURRENT MI
ZALM PC
Citation: Fa. Stevie et al., USING SIMS TO DETECT CONTAMINATION SOURCES FROM ION IMPLANTERS, Solid state technology, 38(5), 1995, pp. 51
Authors:
STEVIE FA
WILSON RG
SIMONS DS
CURRENT MI
ZALM PC
Citation: Fa. Stevie et al., REVIEW OF SECONDARY-ION MASS-SPECTROMETRY CHARACTERIZATION OF CONTAMINATION ASSOCIATED WITH ION-IMPLANTATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2263-2279
Authors:
ENGLAND J
ITO H
CURRENT MI
KAMATA T
MALONE P
Citation: J. England et al., CHARGE NEUTRALIZATION DURING HIGH-CURRENT ION-IMPLANTATION, Solid state technology, 37(7), 1994, pp. 115
Authors:
CURRENT MI
OHNO N
HURLEY K
KEENAN WA
GUITNER TL
JEYNES C
Citation: Mi. Current et al., MICROUNIFORMITY MEASUREMENTS OF ION-IMPLANTED SILICON, Solid state technology, 36(7), 1993, pp. 111
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