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Results: 1-25/28
Authors:
Hamma, S
Cabarrocas, PRI
Citation: S. Hamma et Pri. Cabarrocas, Low-temperature growth of thick intrinsic and ultrathin phosphorous or boron-doped microcrystalline silicon films: Optimum crystalline fractions for solar cell applications, SOL EN MAT, 69(3), 2001, pp. 217-239
Authors:
Hadjadj, A
Beorchia, A
Boufendi, L
Huet, S
Cabarrocas, PRI
Citation: A. Hadjadj et al., Crystallization of nanostructured silicon films deposited under a low-pressure argon-silane pulsed-glow discharge: Correlation with the plasma duration, J VAC SCI A, 19(1), 2001, pp. 124-129
Authors:
Niikura, C
Kim, SY
Drevillon, B
Poissant, Y
Cabarrocas, PRI
Bouree, JE
Citation: C. Niikura et al., Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD, THIN SOL FI, 395(1-2), 2001, pp. 178-183
Authors:
Brenot, R
Vanderhaghen, R
Drevillon, B
Cabarrocas, PRI
Rogel, R
Mohammed-Brahim, T
Citation: R. Brenot et al., Transport mechanisms in hydrogenated microcrystalline silicon, THIN SOL FI, 383(1-2), 2001, pp. 53-56
Authors:
Morral, AFI
Cabarrocas, PRI
Citation: Afi. Morral et Pri. Cabarrocas, Shedding light on the growth of amorphous, polymorphous, protocrystalline and microcrystalline silicon thin films, THIN SOL FI, 383(1-2), 2001, pp. 161-164
Authors:
Abramov, AS
Kosarev, AI
Cabarrocas, PRI
Shutov, MV
Vinogradov, AJ
Citation: As. Abramov et al., Photoinduced effects in RF and VHF a-Si : H films deposited with differention bombardment, THIN SOL FI, 383(1-2), 2001, pp. 178-180
Authors:
Seth, T
Cabarrocas, PRI
Citation: T. Seth et Pri. Cabarrocas, Plasma deposition of carbon films at room temperature from C2H2,-Ar mixtures: anodic vs. cathodic films, THIN SOL FI, 383(1-2), 2001, pp. 216-219
Authors:
Equer, B
Cabarrocas, PRI
Citation: B. Equer et Pri. Cabarrocas, Proceedings of Symposium O on Thin Film Materials for Large Area Electronics of the E-MRS 2000 Spring Conference, Strasbourg, France, May 30-June 2, 2000 - Preface, THIN SOL FI, 383(1-2), 2001, pp. IX-IX
Authors:
Hadjadj, A
Beorchia, A
Cabarrocas, PRI
Boufendi, L
Huet, S
Bubendorff, JL
Citation: A. Hadjadj et al., Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films, J PHYS D, 34(5), 2001, pp. 690-699
Authors:
Paillard, V
Puech, P
Sirvin, R
Hamma, S
Cabarrocas, PRI
Citation: V. Paillard et al., Measurement of the in-depth stress profile in hydrogenated microcrystalline silicon thin films using Raman spectrometry, J APPL PHYS, 90(7), 2001, pp. 3276-3279
Authors:
Hadjad, A
Cabarrocas, PRI
Equer, B
Citation: A. Hadjad et al., Mobility-edge shift during diborane doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide, PHIL MAG B, 80(7), 2000, pp. 1317-1326
Authors:
Morral, AFI
Bertomeu, J
Cabarrocas, PRI
Citation: Afi. Morral et al., The role of hydrogen in the formation of microcrystalline silicon, MAT SCI E B, 69, 2000, pp. 559-563
Authors:
Hadjadj, A
Boufendi, L
Huet, S
Schelz, S
Cabarrocas, PRI
Estrade-Szwarckopf, H
Rousseau, B
Citation: A. Hadjadj et al., Role of the surface roughness in laser induced crystallization of nanostructured silicon films, J VAC SCI A, 18(2), 2000, pp. 529-535
Authors:
Poissant, Y
Cabarrocas, PRI
Citation: Y. Poissant et Pri. Cabarrocas, Optimizing phosphorous and boron doped layers for stable p-i-n solar cells, J NON-CRYST, 266, 2000, pp. 1134-1139
Authors:
Cabarrocas, PRI
Citation: Pri. Cabarrocas, Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films, J NON-CRYST, 266, 2000, pp. 31-37
Authors:
Morral, AFI
Brenot, R
Hamers, EAG
Vanderhaghen, R
Cabarrocas, PRI
Citation: Afi. Morral et al., In situ investigation of polymorphous silicon deposition, J NON-CRYST, 266, 2000, pp. 48-53
Authors:
Butte, R
Vignoli, S
Meaudre, M
Meaudre, R
Marty, O
Saviot, L
Cabarrocas, PRI
Citation: R. Butte et al., Structural, optical and electronic properties of hydrogenated polymorphoussilicon films deposited at 150 degrees C, J NON-CRYST, 266, 2000, pp. 263-268
Authors:
Brenot, R
Vanderhaghen, R
Drevillon, B
Cabarrocas, PRI
Citation: R. Brenot et al., Measurement of transversal ambipolar diffusion coefficient in microcrystalline silicon, J NON-CRYST, 266, 2000, pp. 336-340
Authors:
Abramov, AS
Kosarev, AI
Cabarrocas, PRI
Citation: As. Abramov et al., Kinetics of defects and electron, hole diffusion lengths during light soaking and consequent annealing, J NON-CRYST, 266, 2000, pp. 419-422
Authors:
Hamers, EAG
Morral, AFI
Niikura, C
Brenot, R
Cabarrocas, PRI
Citation: Eag. Hamers et al., Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films, J APPL PHYS, 88(6), 2000, pp. 3674-3688
Authors:
Globus, T
Ganguly, G
Cabarrocas, PRI
Citation: T. Globus et al., Optical characterization of hydrogenated silicon thin films using interference technique, J APPL PHYS, 88(4), 2000, pp. 1907-1915
Authors:
Wehrspohn, RB
Powell, MJ
Deane, SC
French, ID
Cabarrocas, PRI
Citation: Rb. Wehrspohn et al., Dangling-bond defect state creation in microcrystalline silicon thin-film transistors, APPL PHYS L, 77(5), 2000, pp. 750-752
Authors:
Butte, R
Meaudre, R
Meaudre, M
Vignoli, S
Longeaud, C
Kleider, JP
Cabarrocas, PRI
Citation: R. Butte et al., Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon, PHIL MAG B, 79(7), 1999, pp. 1079-1095
Authors:
Vignoli, S
Butte, R
Meaudre, R
Meaudre, M
Cabarrocas, PRI
Citation: S. Vignoli et al., Structural properties depicted by optical measurements in hydrogenated polymorphous silicon, J PHYS-COND, 11(44), 1999, pp. 8749-8757
Authors:
Meaudre, M
Meaudre, R
Butte, R
Vignoli, S
Longeaud, C
Kleider, JP
Cabarrocas, PRI
Citation: M. Meaudre et al., Midgap density of states in hydrogenated polymorphous silicon, J APPL PHYS, 86(2), 1999, pp. 946-950