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Results: 1-14 |
Results: 14
A masking approach for anisotropic silicon wet etching
Authors: Normand, P Beltsios, K Tserepi, A Aidinis, K Tsoukalas, A Cardinaud, C
Citation: P. Normand et al., A masking approach for anisotropic silicon wet etching, EL SOLID ST, 4(10), 2001, pp. G73-G76
New polymer materials for nanoimprinting
Authors: Schulz, H Scheer, HC Hoffmann, T Torres, CMS Pfeiffer, K Bleidiessel, G Grutzner, G Cardinaud, C Gaboriau, F Peignon, MC Ahopelto, J Heidari, B
Citation: H. Schulz et al., New polymer materials for nanoimprinting, J VAC SCI B, 18(4), 2000, pp. 1861-1865
Plasma etching: principles, mechanisms, application to micro- and nano-technologies
Authors: Cardinaud, C Peignon, MC Tessier, PY
Citation: C. Cardinaud et al., Plasma etching: principles, mechanisms, application to micro- and nano-technologies, APPL SURF S, 164, 2000, pp. 72-83
Roughness and chemistry of silicon and polysilicon surfaces etched in high-density plasma: XPS, AFM and ellipsometry analysis
Authors: Rolland, L Vallee, C Peignon, MC Cardinaud, C
Citation: L. Rolland et al., Roughness and chemistry of silicon and polysilicon surfaces etched in high-density plasma: XPS, AFM and ellipsometry analysis, APPL SURF S, 164, 2000, pp. 147-155
SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer
Authors: Rolland, L Peignon, MC Cardinaud, C Turban, G
Citation: L. Rolland et al., SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer, MICROEL ENG, 53(1-4), 2000, pp. 375-379
Novel linear and crosslinking polymers for nanoimprinting with high etch resistance
Authors: Pfeiffer, K Fink, M Bleidiessel, G Gruetzner, G Schulz, H Scheer, HC Hoffmann, T Torres, CMS Gaboriau, F Cardinaud, C
Citation: K. Pfeiffer et al., Novel linear and crosslinking polymers for nanoimprinting with high etch resistance, MICROEL ENG, 53(1-4), 2000, pp. 411-414
High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography
Authors: Gaboriau, F Peignon, MC Barreau, A Turban, G Cardinaud, C Pfeiffer, K Bleidiessel, G Grutzner, G
Citation: F. Gaboriau et al., High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography, MICROEL ENG, 53(1-4), 2000, pp. 501-505
Electronic and optical investigation of hydrogenated amorphous carbon (a-C: H) by X-ray photoemission spectroscopy and spectroscopic ellipsometry
Authors: Hong, JG Lee, S Cardinaud, C Turban, G
Citation: Jg. Hong et al., Electronic and optical investigation of hydrogenated amorphous carbon (a-C: H) by X-ray photoemission spectroscopy and spectroscopic ellipsometry, J NON-CRYST, 265(1-2), 2000, pp. 125-132
Structure of nitrogenated carbon films prepared from acetylene and nitrogen mixture in electron cyclotron resonance plasma
Authors: Bhattacharyya, S Vallee, C Cardinaud, C Turban, G
Citation: S. Bhattacharyya et al., Structure of nitrogenated carbon films prepared from acetylene and nitrogen mixture in electron cyclotron resonance plasma, J APPL PHYS, 87(10), 2000, pp. 7524-7532
ICP reactors for plasma processing
Authors: Cardinaud, C
Citation: C. Cardinaud, ICP reactors for plasma processing, VIDE, 54(291), 1999, pp. 20
Studies on structural properties of a-CN : H films prepared in electron cyclotron resonance plasma
Authors: Bhattacharyya, S Vallee, C Cardinaud, C Turban, G
Citation: S. Bhattacharyya et al., Studies on structural properties of a-CN : H films prepared in electron cyclotron resonance plasma, DIAM RELAT, 8(2-5), 1999, pp. 586-590
Chemical etching of thin SiOxCyHz films by post-deposition exposure to oxygen plasma
Authors: Vallee, C Granier, A Aumaille, K Cardinaud, C Goullet, A Coulon, N Turban, G
Citation: C. Vallee et al., Chemical etching of thin SiOxCyHz films by post-deposition exposure to oxygen plasma, APPL SURF S, 139, 1999, pp. 57-61
An XPS study of the SF6 reactive ion beam etching of silicon at low temperatures
Authors: Tessier, PY Chevolleau, T Cardinaud, C Grolleau, B
Citation: Py. Tessier et al., An XPS study of the SF6 reactive ion beam etching of silicon at low temperatures, NUCL INST B, 155(3), 1999, pp. 280-288
Studies on structural properties of amorphous nitrogenated carbon films from electron energy loss, ellipsometry, Auger electron spectroscopy, and electron-spin resonance
Authors: Bhattacharyya, S Vallee, C Cardinaud, C Chauvet, O Turban, G
Citation: S. Bhattacharyya et al., Studies on structural properties of amorphous nitrogenated carbon films from electron energy loss, ellipsometry, Auger electron spectroscopy, and electron-spin resonance, J APPL PHYS, 85(4), 1999, pp. 2162-2169
Risultati: 1-14 |