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Results: 1-25 | 26-44 |
Results: 26-44/44
Optical characterisation of interface properties for hexagonal GaN grown by MBE on GaAs
Authors: Shokhovets, S Goldhahn, R Gobsch, G Cheng, TS Foxon, CT
Citation: S. Shokhovets et al., Optical characterisation of interface properties for hexagonal GaN grown by MBE on GaAs, MAT SCI E B, 59(1-3), 1999, pp. 69-72
EXAFS studies of Mg doped InN grown on Al2O3
Authors: Blant, AV Cheng, TS Jeffs, NJ Flannery, LB Harrison, I Mosselmans, JFW Smith, AD Foxon, CT
Citation: Av. Blant et al., EXAFS studies of Mg doped InN grown on Al2O3, MAT SCI E B, 59(1-3), 1999, pp. 218-221
Heat pulse studies of the energy relaxation rate of hot electrons in n-type GaN epilayers
Authors: Hawker, P Kent, AJ Cheng, TS Foxon, CT
Citation: P. Hawker et al., Heat pulse studies of the energy relaxation rate of hot electrons in n-type GaN epilayers, PHYSICA B, 263, 1999, pp. 227-229
Optical study of the alpha-GaN/GaAs interface properties as a function of MBE growth conditions
Authors: Shokhovets, S Goldhahn, R Cheng, TS Foxon, CT
Citation: S. Shokhovets et al., Optical study of the alpha-GaN/GaAs interface properties as a function of MBE growth conditions, SEMIC SCI T, 14(2), 1999, pp. 181-186
Quasielastic electron-deuteron scattering in a hybrid quark-hadron model
Authors: Cheng, TS Li, G Lu, LC
Citation: Ts. Cheng et al., Quasielastic electron-deuteron scattering in a hybrid quark-hadron model, COMM TH PHY, 31(2), 1999, pp. 243-250
Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy
Authors: Foxon, CT Cheng, TS Novikov, SV Jeffs, NJ Hughes, OH Melnik, YV Nikolaev, AE Dmitriev, VA
Citation: Ct. Foxon et al., Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy, SURF SCI, 421(3), 1999, pp. 377-385
Collective properties of spatially indirect excitons in asymmetric GaAs AlGaAs double quantum wells
Authors: Krivolapchuk, VV Moskalenko, ES Zhmodikov, AL Cheng, TS Foxon, CT
Citation: Vv. Krivolapchuk et al., Collective properties of spatially indirect excitons in asymmetric GaAs AlGaAs double quantum wells, SOL ST COMM, 111(1), 1999, pp. 49-54
Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy
Authors: Cheng, TS Novikov, SV Foxon, CT Orton, JW
Citation: Ts. Cheng et al., Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy, SOL ST COMM, 109(7), 1999, pp. 439-443
Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD
Authors: Harris, JJ Lee, KJ Harrison, I Flannery, LB Korakakis, D Cheng, TS Foxon, CT Bougrioua, Z Moerman, I Van der Stricht, W Thrush, EJ Hamilton, B Ferhah, K
Citation: Jj. Harris et al., Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD, PHYS ST S-A, 176(1), 1999, pp. 363-367
Hot electron energy relaxation in gallium nitride
Authors: Stanton, NM Hawker, P Kent, AJ Cheng, TS Foxon, CT
Citation: Nm. Stanton et al., Hot electron energy relaxation in gallium nitride, PHYS ST S-A, 176(1), 1999, pp. 369-372
RHEED studies of group III-nitrides grown by MBE
Authors: Foxon, CT Davis, CS Novikov, SV Hughes, OH Cheng, TS Korakakis, D Jeffs, NJ Grzegory, I Porowski, S
Citation: Ct. Foxon et al., RHEED studies of group III-nitrides grown by MBE, PHYS ST S-A, 176(1), 1999, pp. 723-726
Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals
Authors: Foxon, CT Cheng, TS Novikov, SV Korakakis, D Jeffs, NJ Grzegory, I Porowski, S
Citation: Ct. Foxon et al., Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals, J CRYST GR, 207(1-2), 1999, pp. 1-7
Ga-metal inclusions in GaN grown on sapphire
Authors: Blant, AV Novikov, SV Cheng, TS Flannery, LB Harrison, I Campion, RP Larkins, EC Kribes, Y Foxon, CT
Citation: Av. Blant et al., Ga-metal inclusions in GaN grown on sapphire, J CRYST GR, 203(3), 1999, pp. 349-354
RHEED studies of the GaN surface during growth by molecular beam epitaxy
Authors: Hughes, OH Cheng, TS Novikov, SV Foxon, CT Korakakis, D Jeffs, NJ
Citation: Oh. Hughes et al., RHEED studies of the GaN surface during growth by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 388-391
Incorporation of Mg in GaN grown by molecular beam epitaxy
Authors: Orton, JW Foxon, CT Cheng, TS Hooper, SE Novikov, SV Ber, BY Kudriavtsev, YA
Citation: Jw. Orton et al., Incorporation of Mg in GaN grown by molecular beam epitaxy, J CRYST GR, 197(1-2), 1999, pp. 7-11
The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates
Authors: Cheng, TS Novikov, SV Lebedev, VB Campion, RP Jeffs, NJ Melnik, YV Tsvetkov, DV Stepanov, SI Cherenkov, AE Dmitriev, VA Korakakis, D Hughes, OH Foxon, CT
Citation: Ts. Cheng et al., The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates, J CRYST GR, 197(1-2), 1999, pp. 12-18
Reflectivity investigations as a method for characterizing group III nitride films
Authors: Shokhovets, S Goldhahn, R Gobsch, G Cheng, TS Foxon, CT Kipshidze, GD Richter, W
Citation: S. Shokhovets et al., Reflectivity investigations as a method for characterizing group III nitride films, J APPL PHYS, 86(5), 1999, pp. 2602-2610
Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998)
Authors: Katsavets, NI Laws, GM Harrison, I Larkins, EC Benson, TM Cheng, TS Foxon, CT
Citation: Ni. Katsavets et al., Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998), SEMICONDUCT, 32(11), 1998, pp. 1256-1256
Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
Authors: Foxon, CT Hooper, SE Cheng, TS Orton, JW Ren, GB Ber, BY Merkulov, AV Novikov, SV Tret'yakov, VV
Citation: Ct. Foxon et al., Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux, SEMIC SCI T, 13(12), 1998, pp. 1469-1471
Risultati: 1-25 | 26-44 |