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Results:
1-22
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Results: 22
Authors:
De los Santos, HJ
Chui, KK
Chow, DH
Dunlap, HL
Citation: Hj. De Los Santos et al., An efficient HBT/RTD oscillator for wireless applications, IEEE MICR W, 11(5), 2001, pp. 193-195
Authors:
Schulman, JN
Chow, DH
Jang, DM
Citation: Jn. Schulman et al., InGaAs zero bias backward diodes for millimeter wave direct detection, IEEE ELEC D, 22(5), 2001, pp. 200-202
Authors:
Lin, CH
Yang, K
East, JR
Haddad, GI
Chow, DH
Warren, LD
Dunlap, HL
Roth, JA
Thomas, S
Citation: Ch. Lin et al., Ring oscillator using an RTD-HBT heterostructure, J KOR PHYS, 39(3), 2001, pp. 572-575
Authors:
Fay, P
Jiang, L
Xu, Y
Bernstein, GH
Chow, DH
Schulman, JN
Dunlap, HL
De Los Santos, HJ
Citation: P. Fay et al., Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes, IEEE DEVICE, 48(6), 2001, pp. 1282-1284
Authors:
Fay, P
Lu, J
Xu, Y
Bernstein, GH
Gonzalez, A
Mazumder, P
Chow, DH
Schulman, JN
Citation: P. Fay et al., Digital integrated circuit using integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb RITDs, ELECTR LETT, 37(12), 2001, pp. 758-759
Authors:
Thomas, S
Chow, DH
Kizilogu, K
Fields, CH
Madhav, M
Arthur, A
Citation: S. Thomas et al., Planar integration of heterojunction bipolar transistors and resonant tunneling diodes, J VAC SCI B, 18(5), 2000, pp. 2452-2456
Authors:
Roth, JA
Williamson, WS
Chow, DH
Olson, GL
Johs, B
Citation: Ja. Roth et al., Closed-loop control of resonant tunneling diode barrier thickness using insitu spectroscopic ellipsometry, J VAC SCI B, 18(3), 2000, pp. 1439-1442
Authors:
Schulman, JN
Chow, DH
Citation: Jn. Schulman et Dh. Chow, Sb-heterostructure interband backward diodes, IEEE ELEC D, 21(7), 2000, pp. 353-355
Authors:
Steinshnider, J
Harper, J
Weimer, M
Lin, CH
Pei, SS
Chow, DH
Citation: J. Steinshnider et al., Origin of antimony segregation in GaInSb/InAs strained-layer superlattices, PHYS REV L, 85(21), 2000, pp. 4562-4565
Authors:
Bolognesi, CR
Dvorak, MW
Chow, DH
Citation: Cr. Bolognesi et al., Impact ionization effects on the microwave performance of InAs channel heterostructure field-effect transistors: the role of channel quantization, JPN J A P 1, 38(2B), 1999, pp. 1190-1194
Authors:
Roth, JA
Chow, DH
Olson, GL
Brewer, PD
Williamson, WS
Johs, B
Citation: Ja. Roth et al., Real-time control of the MBE growth of InGaAs on InP, J CRYST GR, 202, 1999, pp. 31-35
Authors:
Bolognesi, CR
Dvorak, MW
Chow, DH
Citation: Cr. Bolognesi et al., Impact ionization suppression by quantum confinement: Effects on the DC and microwave performance of narrow-gap channel InAs/AlSb HFET's, IEEE DEVICE, 46(5), 1999, pp. 826-832
Authors:
Walachova, J
Zelinka, J
Vanis, J
Karamazov, S
Cukr, M
Zich, P
Chow, DH
McGill, TC
Citation: J. Walachova et al., Testing of resonant tunneling double barrier heterostructures by BEEM BEES, CZEC J PHYS, 49(5), 1999, pp. 833-836
Authors:
Hall, KC
Leonard, SW
van Driel, HM
Kost, AR
Selvig, E
Chow, DH
Citation: Kc. Hall et al., Subpicosecond spin relaxation in GaAsSb multiple quantum wells, APPL PHYS L, 75(26), 1999, pp. 4156-4158
Authors:
Hall, KC
Leonard, SW
van Driel, HM
Kost, AR
Selvig, E
Chow, DH
Citation: Kc. Hall et al., "Subpicosecond spin relaxation in GaAsSb multiple quantum wells" (vol 75, pg 3665, 1999), APPL PHYS L, 75(26), 1999, pp. 4210-4210
Authors:
Hall, KC
Leonard, SW
van Driel, HM
Kost, AR
Selvig, E
Chow, DH
Citation: Kc. Hall et al., Subpicosecond spin relaxation in GaAsSb multiple quantum wells, APPL PHYS L, 75(23), 1999, pp. 3665-3667
Authors:
Felix, CL
Bewley, WW
Vurgaftman, I
Meyer, JR
Goldberg, L
Aifer, EH
Olafsen, LJ
Chow, DH
Selvig, E
Lin, CH
Murry, SJ
Zhang, D
Pei, SS
Citation: Cl. Felix et al., Midinfrared vertical-cavity surface-emitting laser (vol 71, pg 3483, 1997), APPL PHYS L, 74(4), 1999, pp. 628-629
Authors:
Felix, CL
Bewley, WW
Vurgaftman, I
Meyer, JR
Goldberg, L
Aifer, EH
Olafsen, LJ
Chow, DH
Selvig, E
Lin, CH
Murry, SJ
Zhang, D
Pei, SS
Citation: Cl. Felix et al., Near-room-temperature midinfrared interband cascade laser (vol 72, pg 2370, 1998), APPL PHYS L, 74(4), 1999, pp. 628-629
Authors:
Felix, CL
Bewley, WW
Vurgaftman, I
Meyer, JR
Goldberg, L
Aifer, EH
Olafsen, LJ
Chow, DH
Selvig, E
Lin, CH
Murry, SJ
Zhang, D
Pei, SS
Citation: Cl. Felix et al., High-temperature type-II superlattice diode laser at lambda=2.9 mu m (vol 71, pg 3607, 1997), APPL PHYS L, 74(4), 1999, pp. 628-629
Authors:
Bewley, WW
Felix, CL
Vurgaftman, I
Aifer, EH
Olafsen, LJ
Meyer, JR
Goldberg, L
Chow, DH
Citation: Ww. Bewley et al., Mid-infrared vertical-cavity surface-emitting lasers for chemical sensing, APPL OPTICS, 38(9), 1999, pp. 1502-1505
Authors:
Meyer, JR
Olafsen, LJ
Aifer, EH
Bewley, WW
Felix, CL
Vurgaftman, I
Yang, MJ
Goldberg, L
Zhang, D
Lin, CH
Pei, SS
Chow, DH
Citation: Jr. Meyer et al., Type II W, interband cascade and vertical-cavity surface-emitting mid-IR lasers, IEE P-OPTO, 145(5), 1998, pp. 275-280
Authors:
Walachova, J
Zelinka, J
Vanis, J
Chow, DH
Schulman, JN
Karamazov, S
Cukr, M
Zich, P
Krai, J
McGill, TC
Citation: J. Walachova et al., Probing of InAs/AlSb double barrier heterostructures by ballistic electronemission spectroscopy (vol 70, pg 3588, 1997), APPL PHYS L, 73(24), 1998, pp. 3612-3612
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