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Results: 1-20 |
Results: 20
Study of the emission characteristics of a rf plasma source for atomic oxygen: Measurements of atom, ion, and electron fluxes
Authors: Kearns, DM Gillen, DR Voulot, D McCullough, RW Thompson, WR Cosimini, GJ Nelson, E Chow, PP Klaassen, J
Citation: Dm. Kearns et al., Study of the emission characteristics of a rf plasma source for atomic oxygen: Measurements of atom, ion, and electron fluxes, J VAC SCI A, 19(3), 2001, pp. 993-997
Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
Authors: Johnson, JW Baca, AG Briggs, RD Shul, RJ Wendt, JR Monier, C Ren, F Pearton, SJ Dabiran, AM Wowchack, AM Polley, CJ Chow, PP
Citation: Jw. Johnson et al., Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE, SOL ST ELEC, 45(12), 2001, pp. 1979-1985
dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
Authors: Luo, B Johnson, JW Ren, F Allums, KK Abernathy, CR Pearton, SJ Dwivedi, R Fogarty, TN Wilkins, R Dabiran, AM Wowchack, AM Polley, CJ Chow, PP Baca, AG
Citation: B. Luo et al., dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors, APPL PHYS L, 79(14), 2001, pp. 2196-2198
Common-base operation of GaN bipolar junction transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Abernathy, CR Pearton, SJ Van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ Chu, SNG
Citation: Xa. Cao et al., Common-base operation of GaN bipolar junction transistors, EL SOLID ST, 3(7), 2000, pp. 333-334
High current, common-base GaN/AlGaN heterojunction bipolar transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Abernathy, CR Pearton, SJ
Citation: Xa. Cao et al., High current, common-base GaN/AlGaN heterojunction bipolar transistors, EL SOLID ST, 3(3), 2000, pp. 144-146
Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma
Authors: Zhang, AP Dang, GT Ren, F Van Hove, JM Klaassen, JJ Chow, PP Cao, XA Pearton, SJ
Citation: Ap. Zhang et al., Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma, J VAC SCI A, 18(4), 2000, pp. 1149-1152
Simulation of GaN/AlGaN heterojunction bipolar transistors: part I - npn structures
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Zhang, AP Dang, G Monier, C Pearton, SJ Ren, F
Citation: Xa. Cao et al., Simulation of GaN/AlGaN heterojunction bipolar transistors: part I - npn structures, SOL ST ELEC, 44(7), 2000, pp. 1255-1259
Simulation of GaN/AlGaN heterojunction bipolar transistors: part II - pnp structures
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Zhang, AP Dang, G Monier, C Pearton, SJ Ren, F
Citation: Xa. Cao et al., Simulation of GaN/AlGaN heterojunction bipolar transistors: part II - pnp structures, SOL ST ELEC, 44(7), 2000, pp. 1261-1265
High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ Ren, F Dang, G Zhang, AP Abernathy, CR Pearton, SJ
Citation: Xa. Cao et al., High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors, SOL ST ELEC, 44(4), 2000, pp. 649-654
GaN/AlGaN HBT fabrication
Authors: Ren, F Han, J Hickman, R Van Hove, JM Chow, PP Klaassen, JJ LaRoche, JR Jung, KB Cho, H Cao, XA Donovan, SM Kopf, RF Wilson, RG Baca, AG Shul, RJ Zhang, L Willison, CG Abernathy, CR Pearton, SJ
Citation: F. Ren et al., GaN/AlGaN HBT fabrication, SOL ST ELEC, 44(2), 2000, pp. 239-244
GaNPN junction issues and developments
Authors: Hickman, R Van Hove, JM Chow, PP Klaassen, JJ Wowchak, AM Polley, CJ King, DJ Ren, F Abernathy, CR Pearton, SJ Jung, KB Cho, H La Roche, JR
Citation: R. Hickman et al., GaNPN junction issues and developments, SOL ST ELEC, 44(2), 2000, pp. 377-381
npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions
Authors: Dang, G Luo, B Zhang, AP Cao, XA Ren, F Pearton, SJ Cho, H Hobson, WS Lopata, J van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ
Citation: G. Dang et al., npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions, SOL ST ELEC, 44(12), 2000, pp. 2097-2100
Ordinary optical dielectric functions of anisotropic hexagonal GaN film determined by variable angle spectroscopic ellipsometry
Authors: Yan, CH Yao, H Van Hove, JM Wowchak, AM Chow, PP Zavada, JM
Citation: Ch. Yan et al., Ordinary optical dielectric functions of anisotropic hexagonal GaN film determined by variable angle spectroscopic ellipsometry, J APPL PHYS, 88(6), 2000, pp. 3463-3469
Conductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers
Authors: Kordos, P Morvic, M Betko, J Van Hove, JM Wowchak, AM Chow, PP
Citation: P. Kordos et al., Conductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers, J APPL PHYS, 88(10), 2000, pp. 5821-5826
Conductivity and Hall-effect in highly resistive GaN layers
Authors: Kordos, P Javorka, P Morvic, M Betko, J Van Hove, JM Wowchak, AM Chow, PP
Citation: P. Kordos et al., Conductivity and Hall-effect in highly resistive GaN layers, APPL PHYS L, 76(25), 2000, pp. 3762-3764
Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy
Authors: Li, LK Jurkovic, MJ Wang, WI Van Hove, JM Chow, PP
Citation: Lk. Li et al., Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy, APPL PHYS L, 76(13), 2000, pp. 1740-1742
A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts
Authors: Fung, AK Borton, JE Nathan, MI Van Hove, JM Hickman, R Chow, PP Wowchak, AM
Citation: Ak. Fung et al., A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts, J ELEC MAT, 28(5), 1999, pp. 572-579
MBE grown AlGaN GaN MODFETs with high breakdown voltage
Authors: Vescan, A Dietrich, R Wieszt, A Tobler, H Leier, H Van Hove, JM Chow, PP Wowchak, AM
Citation: A. Vescan et al., MBE grown AlGaN GaN MODFETs with high breakdown voltage, J CRYST GR, 202, 1999, pp. 327-331
Characterisation of an RF atomic nitrogen plasma source
Authors: Voulot, D McCullough, RW Thompson, WR Burns, D Geddes, J Cosimini, GJ Nelson, E Chow, PP Klaassen, J
Citation: D. Voulot et al., Characterisation of an RF atomic nitrogen plasma source, J CRYST GR, 202, 1999, pp. 399-401
Uniformity and high temperature performance of X-band nitride power hemts fabricated from 2-inch epitaxy
Authors: Hickman, R Van Hove, JM Chow, PP Klaassen, JJ Wowchack, AM Polley, CJ
Citation: R. Hickman et al., Uniformity and high temperature performance of X-band nitride power hemts fabricated from 2-inch epitaxy, SOL ST ELEC, 42(12), 1998, pp. 2183-2185
Risultati: 1-20 |