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Results: 1-25/31
Authors:
Nieto, JP
Caussat, B
Couderc, JP
Orain, I
Jeannerot, L
Citation: Jp. Nieto et al., Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, O-3, TMB, TMPi: Determination of a chemical mechanism, J PHYS IV, 11(PR3), 2001, pp. 149-154
Authors:
Zambov, L
Caussat, B
Boubeker, R
Couderc, JP
Citation: L. Zambov et al., Kinetics of the initial stages of film formation during low pressure chemical vapour deposition of polysilicon by pyrolysis of silane, J PHYS IV, 11(PR3), 2001, pp. 189-196
Authors:
Zareba, W
Nomura, A
Couderc, JP
Citation: W. Zareba et al., Cardiovascular effects of air pollution: What to measure in ECG?, ENVIR H PER, 109, 2001, pp. 533-538
Authors:
Radouane, K
Despax, B
Yousfi, M
Couderc, JP
Klusmann, E
Meyer, H
Schulz, R
Schulze, J
Citation: K. Radouane et al., Two-dimensional electrical modeling of asymmetric radio-frequency discharges for geometry effect analysis. Comparison with experiments, J APPL PHYS, 90(9), 2001, pp. 4346-4354
Authors:
Barathieu, P
Caussat, B
Scheid, E
Jaume, D
Couderc, JP
Citation: P. Barathieu et al., Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon thin films I. Experimental study and proposal of new kinetic laws, J ELCHEM SO, 148(3), 2001, pp. C149-C155
Authors:
Barathieu, P
Caussat, B
Scheid, E
Couderc, JP
Citation: P. Barathieu et al., Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon thin films II. Theoretical local analysis of the process, J ELCHEM SO, 148(3), 2001, pp. C156-C161
Authors:
Zareba, W
Sattari, MN
Rosero, S
Couderc, JP
Moss, AJ
Citation: W. Zareba et al., Altered atrial, atrioventricular, and ventricular conduction in patients with the long QT syndrome caused by the Delta KPQ SCH5A sodium channel gone mutation, AM J CARD, 88(11), 2001, pp. 1311
Authors:
Perkiomaki, JS
Zareba, W
Daubert, JP
Couderc, JP
Corsello, A
Kremer, K
Citation: Js. Perkiomaki et al., Fractal correlation properties at heart rate dynamics and adverse events in patients with implantable cardioverter-defibrillators, AM J CARD, 88(1), 2001, pp. 17-22
Authors:
Perkiomaki, JS
Zareba, W
Kalaria, VG
Couderc, JP
Huikuri, HV
Moss, AJ
Citation: Js. Perkiomaki et al., Comparability of nonlinear measures of heart rate variability between long- and short-term electrocardiographic recordings, AM J CARD, 87(7), 2001, pp. 905
Authors:
Zareba, W
Couderc, JP
Burattini, L
Citation: W. Zareba et al., T wave alternans and T wave variability: Noninvasive indices of vulnerability to ventricular tachyarrhythmias, NONINVASIVE ELECTROCARDIOLOGY IN CLINICAL PRACTICE, 2001, pp. 123-143
Authors:
Couderc, JP
Chevalier, P
Fayn, J
Rubel, P
Touboul, P
Citation: Jp. Couderc et al., Identification of post-myocardial infarction patients prone to ventriculartachycardia using time-frequency analysis of QRS and ST segments, EUROPACE, 2(2), 2000, pp. 141-153
Authors:
Fakhr-Eddine, K
Cabassud, M
Le Lann, MV
Couderc, JP
Citation: K. Fakhr-eddine et al., Neural network structures for optimal control of LPCVD reactors, NEURAL C AP, 9(3), 2000, pp. 172-180
Authors:
Ruvalcaba, JRR
Caussat, B
Hemati, M
Couderc, JP
Citation: Jrr. Ruvalcaba et al., Influence of principle operating parameters on chemical vapor deposition of silicon from silane in a fluidized bed to limit agglomeration problems, CAN J CH EN, 78(5), 2000, pp. 955-963
Authors:
Vergnes, H
Duverneuil, P
Couderc, JP
Citation: H. Vergnes et al., A new technology for chemical vapor deposition reactors. Part One: Presentation and analysis of experimental results, CAN J CH EN, 78(4), 2000, pp. 793-802
Authors:
Vergnes, H
Duverneuil, P
Couderc, JP
Citation: H. Vergnes et al., new equipment technology for chemical vapor deposition - .2. Modelling of pure silicon desposition from silane and insitu phosphorus doped silicon, CAN J CH EN, 78(4), 2000, pp. 803-814
Authors:
Ruvalcaba, JRR
Caussat, B
Hemati, M
Couderc, JP
Citation: Jrr. Ruvalcaba et al., Extension of the fluidized bed silicon CVD process to non-conventional operating conditions - Depositions on porous powders and or under reduced pressure, CHEM ENGN J, 73(1), 1999, pp. 61-66
Authors:
Fakhr-Eddine, K
Cabassud, M
Lann, MV
Couderc, JP
Citation: K. Fakhr-eddine et al., Application of neural networks to the modeling of LPCVD reactors - Deposition of in-situ boron-doped silicon, CHEM ENGN J, 72(2), 1999, pp. 171-182
Authors:
Temple-Boyer, P
de Mauduit, B
Caussat, B
Couderc, JP
Citation: P. Temple-boyer et al., Correlations between stress and microstructure into LPCVD silicon films, J PHYS IV, 9(P8), 1999, pp. 1107-1114
Authors:
Nieto, JP
Caussat, B
Couderc, JP
Coletti, S
Jeannerot, L
Citation: Jp. Nieto et al., Modeling of SiO2 deposition from mixtures of tetraethoxysilane and ozone in an APCVD industrial reactor, J PHYS IV, 9(P8), 1999, pp. 149-155
Authors:
Barathieu, P
Caussat, B
Scheid, E
Jaume, D
Couderc, JP
Citation: P. Barathieu et al., Chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS): Experience and simulation, J PHYS IV, 9(P8), 1999, pp. 173-180
Authors:
Dollet, A
Caussat, B
Couderc, JP
Citation: A. Dollet et al., Prediction of LPCVD silicon film microstructure from local operating conditions using numerical modeling, J PHYS IV, 9(P8), 1999, pp. 181-188
Authors:
Date, L
Radouane, K
Caquineau, H
Despax, B
Couderc, JP
Yousfi, M
Citation: L. Date et al., Analysis of the N2O dissociation by r.f. discharges in a plasma reactor, SURF COAT, 119, 1999, pp. 1042-1048
Beat-to-beat repolarization variability in LQTS patients with the SCN5A sodium channel gene mutation
Authors:
Couderc, JP
Zareba, W
Burattini, L
Moss, AJ
Citation: Jp. Couderc et al., Beat-to-beat repolarization variability in LQTS patients with the SCN5A sodium channel gene mutation, PACE, 22(11), 1999, pp. 1581-1592
Authors:
Paillard, V
Puech, P
Temple-Boyer, P
Caussat, B
Scheid, E
Couderc, JP
de Mauduit, B
Citation: V. Paillard et al., Improved characterization of polycrystalline silicon film, by resonant Raman scattering, THIN SOL FI, 337(1-2), 1999, pp. 93-97
Authors:
Caussat, B
Hemati, M
Couderc, JP
Citation: B. Caussat et al., Local modeling of mass transfer with chemical reactions in a gas-solid fluidized bed. Application to the chemical vapor deposition of silicon from silanes, POWD TECH, 101(1), 1999, pp. 43-55