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Results: 1-25 | 26-31
Results: 1-25/31
PLASTIC VERSUS ELASTIC MISFIT RELAXATION IN III-NITRIDES GROWN BY MOLECULAR-BEAM EPITAXY
Authors: FEUILLET G DAUDIN B WIDMANN F ROUVIERE JL ARLERY M
Citation: G. Feuillet et al., PLASTIC VERSUS ELASTIC MISFIT RELAXATION IN III-NITRIDES GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 190, 1998, pp. 142-146
HOW TO GROW CUBIC GAN WITH LOW HEXAGONAL PHASE CONTENT ON (001)SIC BYMOLECULAR-BEAM EPITAXY
Authors: DAUDIN B FEUILLET G HUBNER J SAMSON Y WIDMANN F PHILIPPE A BRUCHEVALLIER C GUILLOT G BUSTARRET E BENTOUMI G DENEUVILLE A
Citation: B. Daudin et al., HOW TO GROW CUBIC GAN WITH LOW HEXAGONAL PHASE CONTENT ON (001)SIC BYMOLECULAR-BEAM EPITAXY, Journal of applied physics, 84(4), 1998, pp. 2295-2300
GROWTH-KINETICS AND OPTICAL-PROPERTIES OF SELF-ORGANIZED GAN QUANTUM DOTS
Authors: WIDMANN F DAUDIN B FEUILLET G SAMSON Y ROUVIERE JL PELEKANOS N
Citation: F. Widmann et al., GROWTH-KINETICS AND OPTICAL-PROPERTIES OF SELF-ORGANIZED GAN QUANTUM DOTS, Journal of applied physics, 83(12), 1998, pp. 7618-7624
IMPROVED QUALITY GAN GROWN BY MOLECULAR-BEAM EPITAXY USING IN AS A SURFACTANT
Authors: WIDMANN F DAUDIN B FEUILLET G PELEKANOS N ROUVIERE JL
Citation: F. Widmann et al., IMPROVED QUALITY GAN GROWN BY MOLECULAR-BEAM EPITAXY USING IN AS A SURFACTANT, Applied physics letters, 73(18), 1998, pp. 2642-2644
2D 3D GROWTH OF GAN BY MOLECULAR-BEAM EPITAXY - TOWARDS GAN QUANTUM DOTS/
Authors: DAUDIN B WIDMANN F FEUILLET G ADELMANN C SAMSON Y ARLERY M ROUVIERE JL
Citation: B. Daudin et al., 2D 3D GROWTH OF GAN BY MOLECULAR-BEAM EPITAXY - TOWARDS GAN QUANTUM DOTS/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 8-11
TRANSMISSION ELECTRON-MICROSCOPY STRUCTURAL CHARACTERIZATION OF GAN LAYERS GROWN ON (0001)SAPPHIRE
Authors: ROUVIERE JL ARLERY M DAUDIN B FEUILLET G BRIOT O
Citation: Jl. Rouviere et al., TRANSMISSION ELECTRON-MICROSCOPY STRUCTURAL CHARACTERIZATION OF GAN LAYERS GROWN ON (0001)SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 61-71
COMPARATIVE-STUDY OF HEXAGONAL AND CUBIC GAN GROWTH BY RF-MBE
Authors: FEUILLET G WIDMANN F DAUDIN B SCHULER J ARLERY M ROUVIERE JL PELEKANOS N BRIOT O
Citation: G. Feuillet et al., COMPARATIVE-STUDY OF HEXAGONAL AND CUBIC GAN GROWTH BY RF-MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 233-237
THE KEY ROLE OF POLARITY IN THE GROWTH-PROCESS OF (0001)-NITRIDES
Authors: DAUDIN B ROUVIERE JL ARLERY M
Citation: B. Daudin et al., THE KEY ROLE OF POLARITY IN THE GROWTH-PROCESS OF (0001)-NITRIDES, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 157-160
INSERTION OF ALE GROWN ZNTE MONOMOLECULAR FILMS IN CDTE CDZNTE HETEROSTRUCTURES TO PROBE THE QUANTUM-WELL EIGENSTATES/
Authors: STIFTER D KANY F DAUDIN B WASIELA A MARIETTE H
Citation: D. Stifter et al., INSERTION OF ALE GROWN ZNTE MONOMOLECULAR FILMS IN CDTE CDZNTE HETEROSTRUCTURES TO PROBE THE QUANTUM-WELL EIGENSTATES/, Applied surface science, 112, 1997, pp. 159-164
STRANSKI-KRASTANOV GROWTH MODE DURING THE MOLECULAR-BEAM EPITAXY OF HIGHLY STRAINED GAN
Authors: DAUDIN B WIDMANN F FEUILLET G SAMSON Y ARLERY M ROUVIERE JL
Citation: B. Daudin et al., STRANSKI-KRASTANOV GROWTH MODE DURING THE MOLECULAR-BEAM EPITAXY OF HIGHLY STRAINED GAN, Physical review. B, Condensed matter, 56(12), 1997, pp. 7069-7072
LAYER-BY-LAYER GROWTH OF ALN AND GAN BY MOLECULAR-BEAM EPITAXY
Authors: DAUDIN B WIDMANN F
Citation: B. Daudin et F. Widmann, LAYER-BY-LAYER GROWTH OF ALN AND GAN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 182(1-2), 1997, pp. 1-5
COMPACT ELECTRON-CYCLOTRON-RESONANCE PLASMA SOURCE FOR MOLECULAR-BEAMEPITAXY APPLICATIONS
Authors: ROSSNER U BRUNLECUNFF D BARSKI A DAUDIN B
Citation: U. Rossner et al., COMPACT ELECTRON-CYCLOTRON-RESONANCE PLASMA SOURCE FOR MOLECULAR-BEAMEPITAXY APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2655-2658
REVERSIBILITY OF THE ELEMENTARY MECHANISMS OF ATOMIC-LAYER EPITAXY AND SUBLIMATION OF (001)CDTE
Authors: VERON MB ARNOULT A DAUDIN B TATARENKO S
Citation: Mb. Veron et al., REVERSIBILITY OF THE ELEMENTARY MECHANISMS OF ATOMIC-LAYER EPITAXY AND SUBLIMATION OF (001)CDTE, Physical review. B, Condensed matter, 54(8), 1996, pp. 5267-5270
STOICHIOMETRY DETERMINATION OF THE TE-RICH (100)CDTE AND (100)ZNTE SURFACES
Authors: DAUDIN B BRUNLECUNFF D TATARENKO S
Citation: B. Daudin et al., STOICHIOMETRY DETERMINATION OF THE TE-RICH (100)CDTE AND (100)ZNTE SURFACES, Surface science, 352, 1996, pp. 99-104
ATOMIC MOTION ON THE CDTE(001) SURFACE OBSERVED WITH SCANNING-TUNNELING-MICROSCOPY
Authors: SEEHOFER L ETGENS VH FALKENBERG G VERON MB BRUN D DAUDIN B TATARENKO S JOHNSON RL
Citation: L. Seehofer et al., ATOMIC MOTION ON THE CDTE(001) SURFACE OBSERVED WITH SCANNING-TUNNELING-MICROSCOPY, Surface science, 347(1-2), 1996, pp. 55-60
RECONSTRUCTION AND STOICHIOMETRY OF CDTE(001) SURFACES - A GRAZING-INCIDENCE X-RAY-DIFFRACTION AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY
Authors: VERON MB ETGENS VH SAUVAGESIMKIN M TATARENKO S DAUDIN B BRUNLECUNFF D
Citation: Mb. Veron et al., RECONSTRUCTION AND STOICHIOMETRY OF CDTE(001) SURFACES - A GRAZING-INCIDENCE X-RAY-DIFFRACTION AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY, Journal of crystal growth, 159(1-4), 1996, pp. 694-702
LOW SCHOTTKY-BARRIER HEIGHT CONTACTS TO N-CDTE USING RARE-EARTH-METALS
Authors: BRUNLECUNFF D DAUDIN B
Citation: D. Brunlecunff et B. Daudin, LOW SCHOTTKY-BARRIER HEIGHT CONTACTS TO N-CDTE USING RARE-EARTH-METALS, Journal of applied physics, 79(11), 1996, pp. 8541-8548
OHMIC CONTACTS ON N-TYPE CDTE AND CDZNTE USING COHERENTLY GROWN NEODYMIUM
Authors: BRUNLECUNFF D DAUDIN B ROUVIERE JL
Citation: D. Brunlecunff et al., OHMIC CONTACTS ON N-TYPE CDTE AND CDZNTE USING COHERENTLY GROWN NEODYMIUM, Applied physics letters, 69(4), 1996, pp. 514-516
POLARITY DETERMINATION OF GAN FILMS BY ION CHANNELING AND CONVERGENT-BEAM ELECTRON-DIFFRACTION
Authors: DAUDIN B ROUVIERE JL ARLERY M
Citation: B. Daudin et al., POLARITY DETERMINATION OF GAN FILMS BY ION CHANNELING AND CONVERGENT-BEAM ELECTRON-DIFFRACTION, Applied physics letters, 69(17), 1996, pp. 2480-2482
DIPOLAR GLASS BEHAVIOR OF A FERROELECTRIC POLYMER AFTER IRRADIATION
Authors: LEGRAND JF DAUDIN B BELLETAMALRIC E
Citation: Jf. Legrand et al., DIPOLAR GLASS BEHAVIOR OF A FERROELECTRIC POLYMER AFTER IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 105(1-4), 1995, pp. 225-228
SURFACE STOICHIOMETRY DETERMINATION USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND ATOMIC-LAYER EPITAXY - THE CASE OF ZNTE(100)
Authors: DAUDIN B TATARENKO S CUNFF DB
Citation: B. Daudin et al., SURFACE STOICHIOMETRY DETERMINATION USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND ATOMIC-LAYER EPITAXY - THE CASE OF ZNTE(100), Physical review. B, Condensed matter, 52(11), 1995, pp. 7822-7825
EXTENDED SYNCHROTRON X-RAY REFLECTIVITY STUDY OF A SM-BASED LAYER BURIED INTO CDTE(001)
Authors: BOUDET N EYMERY J RENAUD G ROUVIERE JL VEUILLEN JY BRUN D DAUDIN B
Citation: N. Boudet et al., EXTENDED SYNCHROTRON X-RAY REFLECTIVITY STUDY OF A SM-BASED LAYER BURIED INTO CDTE(001), Surface science, 327(3), 1995, pp. 515-520
IODINE DOPING OF CDTE AND CDZNTE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: BRUNLECUNFF D BARON T DAUDIN B TATARENKO S BLANCHARD B
Citation: D. Brunlecunff et al., IODINE DOPING OF CDTE AND CDZNTE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(7), 1995, pp. 965-967
SCANNING-TUNNELING-MICROSCOPY STUDY OF CDTE(001)
Authors: SEEHOFER L FALKENBERG G JOHNSON RL ETGENS VH TATARENKO S BRUN D DAUDIN B
Citation: L. Seehofer et al., SCANNING-TUNNELING-MICROSCOPY STUDY OF CDTE(001), Applied physics letters, 67(12), 1995, pp. 1680-1682
ANISOTROPIC RELAXATION DURING THE FIRST STAGES OF THE GROWTH OF ZNTE (001) CDTE STRAINED LAYERS STUDIED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION/
Authors: EYMERY J DAUDIN B BRUNLECUNFF D BOUDET N TATARENKO S
Citation: J. Eymery et al., ANISOTROPIC RELAXATION DURING THE FIRST STAGES OF THE GROWTH OF ZNTE (001) CDTE STRAINED LAYERS STUDIED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION/, Applied physics letters, 66(25), 1995, pp. 3456-3458
Risultati: 1-25 | 26-31