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Results: 1-23 |
Results: 23
EFFECT OF OXYGEN ON THE ELECTRICAL CHARACTERISTICS OF PPV-LEDS
Authors: MANCA J BIJNENS W KIEBOOMS R DHAEN J DOLIESLAEGER M WU TD DECEUNINCK W DESCHEPPER L VANDERZANDE D GELAN J STALS L
Citation: J. Manca et al., EFFECT OF OXYGEN ON THE ELECTRICAL CHARACTERISTICS OF PPV-LEDS, Optical materials, 9(1-4), 1998, pp. 134-137
A NEW PRECURSOR TO ELECTROCONDUCTING CONJUGATED POLYMERS - SYNTHESIS AND OPTOELECTRICAL PROPERTIES OF LUMINESCENT DEVICES BASED ON THESE PPV DERIVATIVES
Authors: BIJNENS W VANDERBORGHT M MANCA J DECEUNINCK W DESCHEPPER L VANDERZANDE D GELAN J STALS L
Citation: W. Bijnens et al., A NEW PRECURSOR TO ELECTROCONDUCTING CONJUGATED POLYMERS - SYNTHESIS AND OPTOELECTRICAL PROPERTIES OF LUMINESCENT DEVICES BASED ON THESE PPV DERIVATIVES, Optical materials, 9(1-4), 1998, pp. 150-153
ELECTRICAL CHARACTERIZATION AND RELIABILITY EVALUATION OF CAPACITORS BY MEANS OF IN-SITU LEAKAGE CURRENT MEASUREMENTS
Authors: MANCA JV CROES K DESCHEPPER L DECEUNINCK W STALS LM JACQUES L TIELEMANS L GERRITS N HOPPENER R
Citation: Jv. Manca et al., ELECTRICAL CHARACTERIZATION AND RELIABILITY EVALUATION OF CAPACITORS BY MEANS OF IN-SITU LEAKAGE CURRENT MEASUREMENTS, Quality and reliability engineering international, 14(2), 1998, pp. 63-68
BIMODAL FAILURE BEHAVIOR OF METAL-FILM RESISTORS
Authors: CROES K DECEUNINCK W DESCHEPPER L TIELEMANS L
Citation: K. Croes et al., BIMODAL FAILURE BEHAVIOR OF METAL-FILM RESISTORS, Quality and reliability engineering international, 14(2), 1998, pp. 87-90
ELECTRICAL-FIELD INDUCED AGING OF POLYMER LIGHT-EMITTING-DIODES IN ANOXYGEN-RICH ATMOSPHERE STUDIED BY EMISSION MICROSCOPY, SCANNING ELECTRON-MICROSCOPY AND SECONDARY-ION MASS-SPECTROSCOPY
Authors: BIJNENS W DEWOLF I MANCA J DHAEN J WU TD DOLIESLAEGER M BEYNE E KIEBOOMS R VANDERZANDE D GELAN J DECEUNINCK W DESCHEPPER L STALS LM
Citation: W. Bijnens et al., ELECTRICAL-FIELD INDUCED AGING OF POLYMER LIGHT-EMITTING-DIODES IN ANOXYGEN-RICH ATMOSPHERE STUDIED BY EMISSION MICROSCOPY, SCANNING ELECTRON-MICROSCOPY AND SECONDARY-ION MASS-SPECTROSCOPY, Synthetic metals, 96(2), 1998, pp. 87-96
OVERVIEW OF THE KINETICS OF THE EARLY STAGES OF ELECTROMIGRATION UNDER LOW (= REALISTIC) CURRENT-DENSITY STRESS
Authors: VANOLMEN J MANCA JV DECEUNINCK W DESCHEPPER L DHAEGER V WITVROUW A MAEX K
Citation: J. Vanolmen et al., OVERVIEW OF THE KINETICS OF THE EARLY STAGES OF ELECTROMIGRATION UNDER LOW (= REALISTIC) CURRENT-DENSITY STRESS, Microelectronics and reliability, 38(6-8), 1998, pp. 1009-1013
THE DEPENDENCE OF STRESS-INDUCED VOIDING ON LINE-WIDTH STUDIED BY CONVENTIONAL AND HIGH-RESOLUTION RESISTANCE MEASUREMENTS
Authors: WITVROUW A MAEX K DECEUNINCK W LEKENS G DHAEN J DESCHEPPER L
Citation: A. Witvrouw et al., THE DEPENDENCE OF STRESS-INDUCED VOIDING ON LINE-WIDTH STUDIED BY CONVENTIONAL AND HIGH-RESOLUTION RESISTANCE MEASUREMENTS, Microelectronics and reliability, 38(6-8), 1998, pp. 1035-1040
THE TIME OF GUESSING YOUR FAILURE TIME DISTRIBUTION IS OVER
Authors: CROES K MANCAL JV DECEUNINCK W DESCHEPPER L MOLENBERGHS G
Citation: K. Croes et al., THE TIME OF GUESSING YOUR FAILURE TIME DISTRIBUTION IS OVER, Microelectronics and reliability, 38(6-8), 1998, pp. 1187-1191
LOCALIZED MONITORING OF ELECTROMIGRATION WITH EARLY RESISTANCE CHANGEMEASUREMENTS
Authors: MANCA JV CROES K DECEUNINCK W DHAEGER V DHAEN J DEPAUW P TIELEMANS L DESCHEPPER L
Citation: Jv. Manca et al., LOCALIZED MONITORING OF ELECTROMIGRATION WITH EARLY RESISTANCE CHANGEMEASUREMENTS, Microelectronics and reliability, 38(4), 1998, pp. 641-650
STUDY OF CU DIFFUSION IN AN AL-1 WT-PERCENT-SI-0.5 WT-PERCENT-CU BONDPAD WITH AN AL-1 WT-PERCENT-SI BOND WIRE ATTACHED USING SCANNING ELECTRON-MICROSCOPY
Authors: COSEMANS P DHAEN J WITVROUW A PROOST J DOLIESLAEGER M DECEUNINCK W MAEX K DESCHEPPER L
Citation: P. Cosemans et al., STUDY OF CU DIFFUSION IN AN AL-1 WT-PERCENT-SI-0.5 WT-PERCENT-CU BONDPAD WITH AN AL-1 WT-PERCENT-SI BOND WIRE ATTACHED USING SCANNING ELECTRON-MICROSCOPY, Microelectronics and reliability, 38(3), 1998, pp. 309-315
DESIGN OF A NEW TEST STRUCTURE FOR THE STUDY OF ELECTROMIGRATION WITHEARLY RESISTANCE CHANGE MEASUREMENTS
Authors: DECEUNINCK W MANCA J DHAEGER V VANOLMEN J DESCHEPPER L STALS LM
Citation: W. Deceuninck et al., DESIGN OF A NEW TEST STRUCTURE FOR THE STUDY OF ELECTROMIGRATION WITHEARLY RESISTANCE CHANGE MEASUREMENTS, Microelectronics and reliability, 37(12), 1997, pp. 1813-1816
THE THERMALLY BALANCED BRIDGE TECHNIQUE (TBBT) - A NEW HIGH-RESOLUTION RESISTOMETRIC MEASUREMENT TECHNIQUE FOR THE STUDY OF ELECTROMIGRATION-INDUCED EARLY RESISTANCE CHANGES IN METAL STRIPES
Authors: VANOLMEN J DECEUNINCK W DESCHEPPER L GOLDONI A CERVINI A FANTINI F
Citation: J. Vanolmen et al., THE THERMALLY BALANCED BRIDGE TECHNIQUE (TBBT) - A NEW HIGH-RESOLUTION RESISTOMETRIC MEASUREMENT TECHNIQUE FOR THE STUDY OF ELECTROMIGRATION-INDUCED EARLY RESISTANCE CHANGES IN METAL STRIPES, Microelectronics and reliability, 37(10-11), 1997, pp. 1483-1486
A HIGH-RESOLUTION METHOD FOR MEASURING HOT-CARRIER DEGRADATION IN MATCHED TRANSISTOR PAIRS
Authors: DREESEN R DECEUNINCK W DESCHEPPER L GROESENEKEN G
Citation: R. Dreesen et al., A HIGH-RESOLUTION METHOD FOR MEASURING HOT-CARRIER DEGRADATION IN MATCHED TRANSISTOR PAIRS, Microelectronics and reliability, 37(10-11), 1997, pp. 1533-1536
IN-SITU STUDY OF THE DEGRADATION BEHAVIOR OF GAAS-MESFETS FOR HI-REL APPLICATIONS
Authors: PETERSEN R DECEUNINCK W DESCHEPPER L GREGORIS G
Citation: R. Petersen et al., IN-SITU STUDY OF THE DEGRADATION BEHAVIOR OF GAAS-MESFETS FOR HI-REL APPLICATIONS, Microelectronics and reliability, 37(10-11), 1997, pp. 1655-1658
EVALUATION ON A 2-DAY TIME-SCALE OF HIGH-RELIABILITY ELECTRONIC ASSEMBLIES BY IN-SITU ELECTRICAL AND OPTOMECHANICAL TEST TECHNIQUES
Authors: GREGORIS G BOUTON F DEKEUKELEIRE C SILIPRANDI P BAIO F DESCHEPPER L DECEUNINCK W TIELEMANS L AHRENS T KRUMM M
Citation: G. Gregoris et al., EVALUATION ON A 2-DAY TIME-SCALE OF HIGH-RELIABILITY ELECTRONIC ASSEMBLIES BY IN-SITU ELECTRICAL AND OPTOMECHANICAL TEST TECHNIQUES, Quality and reliability engineering international, 12(4), 1996, pp. 247-252
IMAGING OF THE AGING ON ORGANIC ELECTROLUMINESCENT DIODES, UNDER DIFFERENT ATMOSPHERES BY IMPEDANCE SPECTROSCOPY, SCANNING ELECTRON-MICROSCOPY AND SIMS DEPTH PROFILING ANALYSIS
Authors: BIJNENS W MANCA J WU TD DOLIESLAEGER M VANDERZANDE D GELAN J DECEUNINCK W DESCHEPPER L STALS LM
Citation: W. Bijnens et al., IMAGING OF THE AGING ON ORGANIC ELECTROLUMINESCENT DIODES, UNDER DIFFERENT ATMOSPHERES BY IMPEDANCE SPECTROSCOPY, SCANNING ELECTRON-MICROSCOPY AND SIMS DEPTH PROFILING ANALYSIS, Synthetic metals, 83(3), 1996, pp. 261-265
A NEW TECHNIQUE TO CHARACTERIZE THE EARLY STAGES OF ELECTROMIGRATION-INDUCED RESISTANCE CHANGES AT LOW CURRENT DENSITIES
Authors: DHAEGER V DECEUNINCK W KNUYT G DESCHEPPER L STALS LM
Citation: V. Dhaeger et al., A NEW TECHNIQUE TO CHARACTERIZE THE EARLY STAGES OF ELECTROMIGRATION-INDUCED RESISTANCE CHANGES AT LOW CURRENT DENSITIES, Microelectronics and reliability, 36(11-12), 1996, pp. 1695-1698
STUDY OF THE MICROSTRUCTURE OF IC INTERCONNECT METALLIZATIONS USING ANALYTICAL TRANSMISSION ELECTRON-MICROSCOPY AND SECONDARY-ION MASS-SPECTROMETRY
Authors: COSEMANS P DOLIESLAEGER M DECEUNINCK W DESCHEPPER L STALS L
Citation: P. Cosemans et al., STUDY OF THE MICROSTRUCTURE OF IC INTERCONNECT METALLIZATIONS USING ANALYTICAL TRANSMISSION ELECTRON-MICROSCOPY AND SECONDARY-ION MASS-SPECTROMETRY, Microelectronics and reliability, 36(11-12), 1996, pp. 1699-1702
A REINTERPRETATION OF THE EXISTENCE OF A SPECTRUM OF ACTIVATION-ENERGIES FOR THE MICROSTRUCTURAL CHANGES IN AL 1-PERCENT SI LINES
Authors: STULENS H KNUYT G DECEUNINCK W DESCHEPPER L STALS L
Citation: H. Stulens et al., A REINTERPRETATION OF THE EXISTENCE OF A SPECTRUM OF ACTIVATION-ENERGIES FOR THE MICROSTRUCTURAL CHANGES IN AL 1-PERCENT SI LINES, Journal of applied physics, 79(4), 1996, pp. 2160-2161
IN-SITU FAILURE-DETECTION IN THICK-FILM MULTILAYER SYSTEMS
Authors: MANCA J DESCHEPPER L DECEUNINCK W DOLIESLAEGER M STALS LM
Citation: J. Manca et al., IN-SITU FAILURE-DETECTION IN THICK-FILM MULTILAYER SYSTEMS, Quality and reliability engineering international, 11(4), 1995, pp. 307-311
AN ACTIVATION-ENERGY STUDY OF THE MICROSTRUCTURAL CHANGES IN AL-1-PERCENT-SI INTERCONNECTS
Authors: STULENS H KNUYT G DECEUNINCK W DESCHEPPER L STALS L
Citation: H. Stulens et al., AN ACTIVATION-ENERGY STUDY OF THE MICROSTRUCTURAL CHANGES IN AL-1-PERCENT-SI INTERCONNECTS, Journal of applied physics, 75(4), 1994, pp. 2270-2277
DERIVATION OF AN ACTIVATION-ENERGY SPECTRUM FOR DEFECT PROCESSES FROMISOTHERMAL MEASUREMENTS, USING A MINIMIZATION PRINCIPLE AND FOURIER-ANALYSIS
Authors: KNUYT G STULENS H DECEUNINCK W STALS LM
Citation: G. Knuyt et al., DERIVATION OF AN ACTIVATION-ENERGY SPECTRUM FOR DEFECT PROCESSES FROMISOTHERMAL MEASUREMENTS, USING A MINIMIZATION PRINCIPLE AND FOURIER-ANALYSIS, Modelling and simulation in materials science and engineering, 1(4), 1993, pp. 437-448
ELECTROMIGRATION - INVESTIGATION OF HETEROGENEOUS SYSTEMS
Authors: VANHECKE B DESCHEPPER L DECEUNINCK W DHAEGER V DOLIESLAEGERS M BEYNE E ROGGEN J STALS L
Citation: B. Vanhecke et al., ELECTROMIGRATION - INVESTIGATION OF HETEROGENEOUS SYSTEMS, Microelectronics and reliability, 33(8), 1993, pp. 1141-1157
Risultati: 1-23 |