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Results: 1-25 | 26-41
Results: 1-25/41
SCANNING-TUNNELING-MICROSCOPY STUDIES OF GE SI FILMS ON SI(111) - FROM LAYER-BY-LAYER TO QUANTUM DOTS/
Authors: MOTTA N SGARLATA A CALARCO R CAL JC NGUYEN Q PROSPOSITO P BALZAROTTI A DECRESCENZI M
Citation: N. Motta et al., SCANNING-TUNNELING-MICROSCOPY STUDIES OF GE SI FILMS ON SI(111) - FROM LAYER-BY-LAYER TO QUANTUM DOTS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1555-1559
X-RAY-ABSORPTION AT GE L-3 EDGES AS A TOOL TO INVESTIGATE GE SI(001) INTERFACES AND HETEROSTRUCTURES/
Authors: CASTRUCCI P GUNNELLA R DECRESCENZI M SACCHI M DUFOUR G ROCHET F
Citation: P. Castrucci et al., X-RAY-ABSORPTION AT GE L-3 EDGES AS A TOOL TO INVESTIGATE GE SI(001) INTERFACES AND HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1616-1620
ACETYLENE GAS AS A CARBON SOURCE - AN X-RAY PHOTOEMISSION SPECTROSCOPY AND NEAR-EDGE X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY STUDY OF ITS STABILITY ON SI(111)-7X7
Authors: ROCHET F DUFOUR G STEDILE FC SIROTTI F PRIETO P DECRESCENZI M
Citation: F. Rochet et al., ACETYLENE GAS AS A CARBON SOURCE - AN X-RAY PHOTOEMISSION SPECTROSCOPY AND NEAR-EDGE X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY STUDY OF ITS STABILITY ON SI(111)-7X7, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1692-1696
LOCAL STRUCTURAL INVESTIGATION OF SILICON SURFACES BY ELECTRON-SCATTERING
Authors: DECRESCENZI M GUNNELLA R CASTRUCCI P DAVOLI I
Citation: M. Decrescenzi et al., LOCAL STRUCTURAL INVESTIGATION OF SILICON SURFACES BY ELECTRON-SCATTERING, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 20(7-8), 1998, pp. 991-998
MAGNETIC-ANISOTROPY IN EPITAXIAL CU NI/CU/SI(111) ULTRATHIN FILMS STUDIED BY MAGNETOOPTICAL KERR-EFFECT AND BRILLOUIN SPECTROSCOPY/
Authors: GUBBIOTTI G CARLOTTI G DORAZIO F LUCARI F BERNARDINI R DECRESCENZI M
Citation: G. Gubbiotti et al., MAGNETIC-ANISOTROPY IN EPITAXIAL CU NI/CU/SI(111) ULTRATHIN FILMS STUDIED BY MAGNETOOPTICAL KERR-EFFECT AND BRILLOUIN SPECTROSCOPY/, Journal of magnetism and magnetic materials, 177, 1998, pp. 1259-1261
SURFACTANT-MEDIATED GROWTH OF GE SI(001) INTERFACE STUDIED BY XPD/
Authors: GUNNELLA R CASTRUCCI P PINTO N CUCCULELLI P DAVOLI I SEBILLEAU D DECRESCENZI M
Citation: R. Gunnella et al., SURFACTANT-MEDIATED GROWTH OF GE SI(001) INTERFACE STUDIED BY XPD/, Surface review and letters, 5(1), 1998, pp. 157-161
FIRST STAGES OF LOW-TEMPERATURE AND LOW-PRESSURE CARBONIZATION OF SI (001) IN ACETYLENE
Authors: STEDILE FC ROCHET F PONCEY C DUFOUR G GUNNELLA R DECRESCENZI M FROMENT M
Citation: Fc. Stedile et al., FIRST STAGES OF LOW-TEMPERATURE AND LOW-PRESSURE CARBONIZATION OF SI (001) IN ACETYLENE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 301-307
EXCHANGE MECHANISMS AT THE GE SI(001) INTERFACE FROM A MULTIPLE-SCATTERING ANALYSIS OF THE GE L-3 ABSORPTION-EDGE/
Authors: CASTRUCCI P GUNNELLA R DECRESCENZI M SACCHI M DUFOUR G ROCHET F
Citation: P. Castrucci et al., EXCHANGE MECHANISMS AT THE GE SI(001) INTERFACE FROM A MULTIPLE-SCATTERING ANALYSIS OF THE GE L-3 ABSORPTION-EDGE/, Physical review. B, Condensed matter, 58(7), 1998, pp. 4095-4101
EVIDENCE OF ORDERED PHASE OF GE-SI HETEROSTRUCTURES BY X-RAY-ABSORPTION SPECTROSCOPY AT GE L-3 EDGE
Authors: CASTRUCCI P GUNNELLA R PINTO N DECRESCENZI M SACCHI M DUFOUR G ROCHET F
Citation: P. Castrucci et al., EVIDENCE OF ORDERED PHASE OF GE-SI HETEROSTRUCTURES BY X-RAY-ABSORPTION SPECTROSCOPY AT GE L-3 EDGE, Surface science, 416(3), 1998, pp. 466-471
GROWTH OF GE-SI(111) EPITAXIAL LAYERS - INTERMIXING, STRAIN RELAXATION AND ISLAND FORMATION
Authors: MOTTA N SGARLATA A CALARCO R NGUYEN Q CAL JC PATELLA F BALZAROTTI A DECRESCENZI M
Citation: N. Motta et al., GROWTH OF GE-SI(111) EPITAXIAL LAYERS - INTERMIXING, STRAIN RELAXATION AND ISLAND FORMATION, Surface science, 406(1-3), 1998, pp. 254-263
EVIDENCE FOR THE SUPPRESSION OF INCIDENT BEAM EFFECTS IN AUGER-ELECTRON DIFFRACTION
Authors: DAVOLI I GUNNELLA R BERNARDINI R DECRESCENZI M
Citation: I. Davoli et al., EVIDENCE FOR THE SUPPRESSION OF INCIDENT BEAM EFFECTS IN AUGER-ELECTRON DIFFRACTION, Surface science, 396(1-3), 1998, pp. 221-226
LOW KINETIC-ENERGY AED - A TOOL FOR THE STUDY OF GE EPITAXIAL LAYERS GROWN ON SB-TERMINATED SI(111) SURFACE
Authors: DAVOLI I GUNNELLA R BERNARDINI R DECRESCENZI M
Citation: I. Davoli et al., LOW KINETIC-ENERGY AED - A TOOL FOR THE STUDY OF GE EPITAXIAL LAYERS GROWN ON SB-TERMINATED SI(111) SURFACE, Journal of electron spectroscopy and related phenomena, 83(2-3), 1997, pp. 137-142
SIC FORMATION BY REACTION OF SI(001) WITH ACETYLENE - ELECTRONIC-STRUCTURE AND GROWTH MODE
Authors: DUFOUR G ROCHET F STEDILE FC PONCEY C DECRESCENZI M GUNNELLA R FROMENT M
Citation: G. Dufour et al., SIC FORMATION BY REACTION OF SI(001) WITH ACETYLENE - ELECTRONIC-STRUCTURE AND GROWTH MODE, Physical review. B, Condensed matter, 56(7), 1997, pp. 4266-4282
PERPENDICULAR AND INPLANE MAGNETIC-ANISOTROPY IN EPITAXIAL CU NI/CU/SI(111) ULTRATHIN FILMS/
Authors: GUBBIOTTI G CARLOTTI G SOCINO G DORAZIO F LUCARI F BERNARDINI R DECRESCENZI M
Citation: G. Gubbiotti et al., PERPENDICULAR AND INPLANE MAGNETIC-ANISOTROPY IN EPITAXIAL CU NI/CU/SI(111) ULTRATHIN FILMS/, Physical review. B, Condensed matter, 56(17), 1997, pp. 11073-11083
COMPARISON OF THE DIELECTRIC FUNCTION OF ALPD, AL3PD, AND AL70PD20MN10 DETERMINED BY ELECTRON-ENERGY-LOSS MEASUREMENTS
Authors: ZURKIRCH M DECRESCENZI M ERBUDAK M KORTAN AR
Citation: M. Zurkirch et al., COMPARISON OF THE DIELECTRIC FUNCTION OF ALPD, AL3PD, AND AL70PD20MN10 DETERMINED BY ELECTRON-ENERGY-LOSS MEASUREMENTS, Physical review. B, Condensed matter, 56(16), 1997, pp. 10651-10655
COMPARISON OF THE ELECTRONIC-STRUCTURE OF ALPD AND AL70PD20MN10
Authors: ZURKIRCH M DECRESCENZI M ERBUDAK M HOCHSTRASSER M KONAN AR
Citation: M. Zurkirch et al., COMPARISON OF THE ELECTRONIC-STRUCTURE OF ALPD AND AL70PD20MN10, Physical review. B, Condensed matter, 55(14), 1997, pp. 8808-8811
INFLUENCE OF NONDIPOLAR TERMS ON THE CU L(2,3) AND M(2,3) ELECTRON-ENERGY-LOSS FINE-STRUCTURE (EELFS) SPECTRA IN TRANSMISSION AND REFLECTION MODE
Authors: DIOCIAIUTI M LOZZI L PASSACANTANDO M SANTUCCI S PICOZZI P DECRESCENZI M
Citation: M. Diociaiuti et al., INFLUENCE OF NONDIPOLAR TERMS ON THE CU L(2,3) AND M(2,3) ELECTRON-ENERGY-LOSS FINE-STRUCTURE (EELFS) SPECTRA IN TRANSMISSION AND REFLECTION MODE, Journal of electron spectroscopy and related phenomena, 82(1-2), 1996, pp. 1-12
STM STUDIES OF GE-SI THIN-LAYERS EPITAXIALLY GROWN ON SI(111)
Authors: MOTTA N SGARLATA A DECRESCENZI M DERRIEN J
Citation: N. Motta et al., STM STUDIES OF GE-SI THIN-LAYERS EPITAXIALLY GROWN ON SI(111), Applied surface science, 102, 1996, pp. 57-61
XPD STUDY OF ATOMIC INTERMIXING AT THE GE SI(001) INTERFACE/
Authors: DAVOLI I GUNNELLA R CASTRUCCI P PINTO N BERNARDINI R DECRESCENZI M
Citation: I. Davoli et al., XPD STUDY OF ATOMIC INTERMIXING AT THE GE SI(001) INTERFACE/, Applied surface science, 102, 1996, pp. 102-106
X-RAY PHOTOELECTRON-DIFFRACTION STUDY OF INTERMIXING AND MORPHOLOGY AT THE GE SI(001) AND GE/SB/SI(001) INTERFACE/
Authors: GUNNELLA R CASTRUCCI P PINTO N DAVOLI I SEBILLEAU D DECRESCENZI M
Citation: R. Gunnella et al., X-RAY PHOTOELECTRON-DIFFRACTION STUDY OF INTERMIXING AND MORPHOLOGY AT THE GE SI(001) AND GE/SB/SI(001) INTERFACE/, Physical review. B, Condensed matter, 54(12), 1996, pp. 8882-8891
INTERFACE ORDERING IN SI-M GE-N MONOLAYER SUPERLATTICES - A PHOTOLUMINESCENCE STUDY/
Authors: CASALBONI M PINTO N IZZI B DAVOLI I DECRESCENZI M DEMATTEIS F PROSPOSITO P PIZZOFERRATO R
Citation: M. Casalboni et al., INTERFACE ORDERING IN SI-M GE-N MONOLAYER SUPERLATTICES - A PHOTOLUMINESCENCE STUDY/, Physical review. B, Condensed matter, 53(3), 1996, pp. 1030-1033
STRUCTURAL SURFACE INVESTIGATION WITH LOW-ENERGY BACKSCATTERED ELECTRONS
Authors: DECRESCENZI M GUNNELLA R DAVOLI I
Citation: M. Decrescenzi et al., STRUCTURAL SURFACE INVESTIGATION WITH LOW-ENERGY BACKSCATTERED ELECTRONS, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 29-36
METAL PHTHALOCYANINES (MPC, M=NI, CU) ON CU(001) AND SI(001) SURFACESSTUDIED BY XPS, XAS AND STM
Authors: DUFOUR G PONCEY C ROCHET F ROULET H IACOBUCCI S SACCHI M YUBERO F MOTTA N PIANCASTELLI MN SGARLATA A DECRESCENZI M
Citation: G. Dufour et al., METAL PHTHALOCYANINES (MPC, M=NI, CU) ON CU(001) AND SI(001) SURFACESSTUDIED BY XPS, XAS AND STM, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 219-224
INCIDENT BEAM EFFECTS IN AED (AUGER-ELECTRON DIFFRACTION) - THE CASE OF CU(001)
Authors: DAVOLI I GUNNELLA R CASTRUCCI P BERNARDINI R DECRESCENZI M
Citation: I. Davoli et al., INCIDENT BEAM EFFECTS IN AED (AUGER-ELECTRON DIFFRACTION) - THE CASE OF CU(001), Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 493-497
EXFAS STUDIES ON THE THERMAL-BEHAVIOR OF COPPER SURFACE
Authors: LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S DECRESCENZI M
Citation: L. Lozzi et al., EXFAS STUDIES ON THE THERMAL-BEHAVIOR OF COPPER SURFACE, Journal of electron spectroscopy and related phenomena, 72, 1995, pp. 223-227
Risultati: 1-25 | 26-41