ACNP - Italian Periodicals Catalogue

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Results: 1-10 |

Results: 10

FINITE-ELEMENT ELECTROMAGNETIC CHARACTERIZATION OF PARASITICS IN MULTIFINGER THERMALLY SHUNTED HBTS

Authors: DHONDT F BARRETTE J HAESE N ROLLAND PA DELAGE SL

Citation: F. Dhondt et al., FINITE-ELEMENT ELECTROMAGNETIC CHARACTERIZATION OF PARASITICS IN MULTIFINGER THERMALLY SHUNTED HBTS, IEEE microwave and guided wave letters, 8(4), 1998, pp. 167-169

EXTREMELY LOW-NOISE INGAP GAAS HBT OSCILLATOR AT C-BAND/

Authors: PEREZ S FLORIOT D MAURIN P BOUQUET P GUTIERREZ PM OBREGON J DELAGE SL

Citation: S. Perez et al., EXTREMELY LOW-NOISE INGAP GAAS HBT OSCILLATOR AT C-BAND/, Electronics Letters, 34(8), 1998, pp. 813-814

BORON IMPLANTATION INTO GAAS GA0.5IN0.5P HETEROSTRUCTURES/

Authors: HENKEL A DELAGE SL DIFORTEPOISSON MA BLANCK H HARTNAGEL HL

Citation: A. Henkel et al., BORON IMPLANTATION INTO GAAS GA0.5IN0.5P HETEROSTRUCTURES/, JPN J A P 1, 36(1A), 1997, pp. 175-180

EXCESS NOISE-REDUCTION IN GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/

Authors: PLANA R VANHAAREN B ESCOTTE L DELAGE SL BLANCK H

Citation: R. Plana et al., EXCESS NOISE-REDUCTION IN GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 18(3), 1997, pp. 108-110

COLLECTOR-UP INGAP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH F(MAX)/

Authors: HENKEL A DELAGE SL DIFORTEPOISSON MA CHARTIER E BLANCK H HARTNAGEL HL

Citation: A. Henkel et al., COLLECTOR-UP INGAP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH F(MAX)/, Electronics Letters, 33(7), 1997, pp. 634-636

SMALL-SIGNAL AND NOISE MODEL EXTRACTION TECHNIQUE FOR HETEROJUNCTION BIPOLAR-TRANSISTOR AT MICROWAVE-FREQUENCIES

Authors: ROUX JP ESCOTTE L PLANA R GRAFFEUIL J DELAGE SL BLANCK H

Citation: Jp. Roux et al., SMALL-SIGNAL AND NOISE MODEL EXTRACTION TECHNIQUE FOR HETEROJUNCTION BIPOLAR-TRANSISTOR AT MICROWAVE-FREQUENCIES, IEEE transactions on microwave theory and techniques, 43(2), 1995, pp. 293-298

GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR VOLTAGE-CONTROLLED OSCILLATORS AND POWER-AMPLIFIER MICROWAVE MONOLITHIC INTEGRATED-CIRCUITS/

Authors: DIFORTEPOISSON MA BRYLINSKI C DELAGE SL BLANCK H FLORIOT D CASSETTE S CHARTIER E PONS D HUBER A

Citation: Ma. Difortepoisson et al., GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR VOLTAGE-CONTROLLED OSCILLATORS AND POWER-AMPLIFIER MICROWAVE MONOLITHIC INTEGRATED-CIRCUITS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 242-247

LP-MOCVD GROWN GAINP GAAS HBTS FOR VCOS AND POWER-AMPLIFIER MMICS/

Authors: DIFORTEPOISSON MA BRYLINSKI C DELAGE SL BLANCK H FLORIOT D CASSETTE S CHARTIER E PONS D

Citation: Ma. Difortepoisson et al., LP-MOCVD GROWN GAINP GAAS HBTS FOR VCOS AND POWER-AMPLIFIER MMICS/, Journal of crystal growth, 145(1-4), 1994, pp. 983-985

CHEMICAL BEAM EPITAXY OF GA0.5IN0.5P USING TERTIARYBUTYLPHOSPHINE

Authors: GARCIA JC REGRENY P DELAGE SL BLANCK H HIRTZ JP

Citation: Jc. Garcia et al., CHEMICAL BEAM EPITAXY OF GA0.5IN0.5P USING TERTIARYBUTYLPHOSPHINE, Journal of crystal growth, 127(1-4), 1993, pp. 255-257

DEFECTS IN EPITAXIAL SI-DOPED GAINP

Authors: KRYNICKI J ZAIDI MA ZAZOUI M BOURGOIN JC DIFORTEPOISSON M BRYLINSKI C DELAGE SL BLANCK H

Citation: J. Krynicki et al., DEFECTS IN EPITAXIAL SI-DOPED GAINP, Journal of applied physics, 74(1), 1993, pp. 260-266

Risultati: 1-10 |