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Results: 1-25 | 26-50 | 51-59
Results: 1-25/59
TANTALUM PENTOXIDE (TA2O5) THIN-FILMS FOR ADVANCED DIELECTRIC APPLICATIONS
Authors: CHANELIERE C AUTRAN JL DEVINE RAB BALLAND B
Citation: C. Chaneliere et al., TANTALUM PENTOXIDE (TA2O5) THIN-FILMS FOR ADVANCED DIELECTRIC APPLICATIONS, Materials science & engineering. R, Reports, 22(6), 1998, pp. 269-322
PROPERTIES OF AMORPHOUS AND CRYSTALLINE TA2O5 THIN-FILMS DEPOSITED ONSI FROM A TA(OC2H5)(5) PRECURSOR
Authors: CHANELIERE C FOUR S AUTRAN JL DEVINE RAB SANDLER NP
Citation: C. Chaneliere et al., PROPERTIES OF AMORPHOUS AND CRYSTALLINE TA2O5 THIN-FILMS DEPOSITED ONSI FROM A TA(OC2H5)(5) PRECURSOR, Journal of applied physics, 83(9), 1998, pp. 4823-4829
KINETICS AND CHARACTERIZATION OF PLASMA GROWN ALUMINUM-OXIDE
Authors: FOUR S DEVINE RAB VALLIER L
Citation: S. Four et al., KINETICS AND CHARACTERIZATION OF PLASMA GROWN ALUMINUM-OXIDE, Journal of applied physics, 83(10), 1998, pp. 5570-5572
COMMENT ON A MODEL OF HOLE TRAPPING IN SIO2-FILMS ON SILICON [J. APPL. PHYS. 81, 6822 (1997)]
Authors: DEVINE RAB WARREN WL KARNA S
Citation: Rab. Devine et al., COMMENT ON A MODEL OF HOLE TRAPPING IN SIO2-FILMS ON SILICON [J. APPL. PHYS. 81, 6822 (1997)], Journal of applied physics, 83(10), 1998, pp. 5591-5592
RADIATION-INDUCED TRAP LEVELS IN SIMOX OXIDES - LOW-TEMPERATURE THERMALLY STIMULATED LUMINESCENCE
Authors: MARTINI M MEINARDI F ROSETTA E SPINOLO G VEDDA A LERAY JL PAILLET P AUTRAN JL DEVINE RAB
Citation: M. Martini et al., RADIATION-INDUCED TRAP LEVELS IN SIMOX OXIDES - LOW-TEMPERATURE THERMALLY STIMULATED LUMINESCENCE, IEEE transactions on nuclear science, 45(3), 1998, pp. 1396-1401
CHEMICAL-KINETICS OF MOBILE-PROTON GENERATION AND ANNIHILATION IN SIO2 THIN-FILMS
Authors: VANHEUSDEN K WARREN WL FLEETWOOD DM SCHWANK JR SHANEYFELT MR DRAPER BL WINOKUR PS DEVINE RAB ARCHER LB BROWN GA WALLACE RM
Citation: K. Vanheusden et al., CHEMICAL-KINETICS OF MOBILE-PROTON GENERATION AND ANNIHILATION IN SIO2 THIN-FILMS, Applied physics letters, 73(5), 1998, pp. 674-676
STUDY OF GE BONDING AND DISTRIBUTION IN PLASMA OXIDES OF SI1-XGEX ALLOYS
Authors: SECK M DEVINE RAB HERNANDEZ C CAMPIDELLI Y DUPUY JC
Citation: M. Seck et al., STUDY OF GE BONDING AND DISTRIBUTION IN PLASMA OXIDES OF SI1-XGEX ALLOYS, Applied physics letters, 72(21), 1998, pp. 2748-2750
THERMALLY ACTIVATED ELECTRON-CAPTURE BY MOBILE PROTONS IN SIO2 THIN-FILMS
Authors: VANHEUSDEN K KAMA SP PUGH RD WARREN WL FLEETWOOD DM DEVINE RAB EDWARDS AH
Citation: K. Vanheusden et al., THERMALLY ACTIVATED ELECTRON-CAPTURE BY MOBILE PROTONS IN SIO2 THIN-FILMS, Applied physics letters, 72(1), 1998, pp. 28-30
USE OF CARBON-FREE TA2O5 THIN-FILMS AS A GATE INSULATOR
Authors: DEVINE RAB CHANELIERE C AUTRAN JL BALLAND B PAILLET P LERAY JL
Citation: Rab. Devine et al., USE OF CARBON-FREE TA2O5 THIN-FILMS AS A GATE INSULATOR, Microelectronic engineering, 36(1-4), 1997, pp. 61-64
RADIATION-INDUCED H+ TRAPPING IN BURIED SIO2
Authors: VANHEUSDEN K SCHWANK JR WARREN WL FLEETWOOD DM DEVINE RAB
Citation: K. Vanheusden et al., RADIATION-INDUCED H+ TRAPPING IN BURIED SIO2, Microelectronic engineering, 36(1-4), 1997, pp. 241-244
NONVOLATILE MEMORY DEVICE BASED ON MOBILE PROTONS IN SIO2 THIN-FILMS
Authors: VANHEUSDEN K WARREN WL DEVINE RAB FLEETWOOD DM SCHWANK JR SHANEYFELT MR WINOKUR PS LEMNIOS ZJ
Citation: K. Vanheusden et al., NONVOLATILE MEMORY DEVICE BASED ON MOBILE PROTONS IN SIO2 THIN-FILMS, Nature, 386(6625), 1997, pp. 587-589
PROCEEDINGS OF THE FRANCO-ITALIAN SYMPOSIUM ON STRUCTURE AND DEFECTS IN SIO2, FUNDAMENTALS AND APPLICATIONS - AGELONDE, FRANCE - SEPTEMBER 23-25 1996 - PREFACE
Authors: DEVINE RAB SPINOLO G AUTRAN JL VEDDA A
Citation: Rab. Devine et al., PROCEEDINGS OF THE FRANCO-ITALIAN SYMPOSIUM ON STRUCTURE AND DEFECTS IN SIO2, FUNDAMENTALS AND APPLICATIONS - AGELONDE, FRANCE - SEPTEMBER 23-25 1996 - PREFACE, Journal of non-crystalline solids, 216, 1997, pp. 7-7
LOW-TEMPERATURE, PLASMA-ASSISTED OXIDATION OF AMORPHOUS SI
Authors: GIRAULT V PLANTIER H DEVINE RAB TEMPLIER F
Citation: V. Girault et al., LOW-TEMPERATURE, PLASMA-ASSISTED OXIDATION OF AMORPHOUS SI, Journal of non-crystalline solids, 216, 1997, pp. 55-64
H+ AND D+ ASSOCIATED CHARGE BUILDUP DURING ANNEALING OF SI SIO2/SI STRUCTURES/
Authors: VANHEUSDEN K WARREN WL DEVINE RAB
Citation: K. Vanheusden et al., H+ AND D+ ASSOCIATED CHARGE BUILDUP DURING ANNEALING OF SI SIO2/SI STRUCTURES/, Journal of non-crystalline solids, 216, 1997, pp. 116-123
OXIDATION OF CRYSTALLINE SI IN AN O-2 PLASMA - GROWTH-KINETICS AND OXIDE CHARACTERIZATION
Authors: MARTINET C DEVINE RAB BRUNEL M
Citation: C. Martinet et al., OXIDATION OF CRYSTALLINE SI IN AN O-2 PLASMA - GROWTH-KINETICS AND OXIDE CHARACTERIZATION, Journal of applied physics, 81(10), 1997, pp. 6996-7005
PROTONIC NONVOLATILE FIELD-EFFECT TRANSISTOR MEMORIES IN SI SIO2/SI STRUCTURES/
Authors: WARREN WL FLEETWOOD DM SCHWANK JR SHANEYFELT MR DRAPER BL WINOKUR PS KNOLL MG VANHEUSDEN K DEVINE RAB ARCHER LB WALLACE RM
Citation: Wl. Warren et al., PROTONIC NONVOLATILE FIELD-EFFECT TRANSISTOR MEMORIES IN SI SIO2/SI STRUCTURES/, IEEE transactions on nuclear science, 44(6), 1997, pp. 1789-1798
MICROSCOPIC STRUCTURE OF THE E'-DELTA CENTER IN AMORPHOUS SIO2 - A FIRST PRINCIPLES QUANTUM-MECHANICAL INVESTIGATION
Authors: CHAVEZ JR KARNA SP VANHEUSDEN K BROTHERS CP PUGH RD SINGARAJU BK WARREN WL DEVINE RAB
Citation: Jr. Chavez et al., MICROSCOPIC STRUCTURE OF THE E'-DELTA CENTER IN AMORPHOUS SIO2 - A FIRST PRINCIPLES QUANTUM-MECHANICAL INVESTIGATION, IEEE transactions on nuclear science, 44(6), 1997, pp. 1799-1803
IRRADIATION RESPONSE OF MOBILE PROTONS IN BURIED SIO2-FILMS
Authors: VANHEUSDEN K DEVINE RAB SCHWANK JR FLEETWOOD DM POLCAWICH RG WARREN WL KARNA SP PUGH RD
Citation: K. Vanheusden et al., IRRADIATION RESPONSE OF MOBILE PROTONS IN BURIED SIO2-FILMS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2087-2094
INTERFACIAL HARDNESS ENHANCEMENT IN DEUTERIUM ANNEALED 0.25 MU-M CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
Authors: DEVINE RAB AUTRAN JL WARREN WL VANHEUSDAN KL ROSTAING JC
Citation: Rab. Devine et al., INTERFACIAL HARDNESS ENHANCEMENT IN DEUTERIUM ANNEALED 0.25 MU-M CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Applied physics letters, 70(22), 1997, pp. 2999-3001
SIO2 SI INTERFACIAL DEGRADATION AND THE ROLE OF OXYGEN INTERSTITIALS/
Authors: DEVINE RAB
Citation: Rab. Devine, SIO2 SI INTERFACIAL DEGRADATION AND THE ROLE OF OXYGEN INTERSTITIALS/, Journal de physique. III, 6(12), 1996, pp. 1569-1594
ENERGETIC ION IMPACTS ON QUARTZ SURFACES - A STUDY BY ATOMIC-FORCE MICROSCOPY
Authors: WILSON IH XU JB DEVINE RAB WEBB RP
Citation: Ih. Wilson et al., ENERGETIC ION IMPACTS ON QUARTZ SURFACES - A STUDY BY ATOMIC-FORCE MICROSCOPY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 473-477
ION IMPACTS AND NANOSTRUCTURES ON GE(111), IN0.22GA0.78AS GAAS(100) AND ALPHA-QUARTZ SURFACES OBSERVED BY ATOMIC-FORCE MICROSCOPY/
Authors: WILSON IH CHEN YJ XU JB DEVINE RAB JEYNES C
Citation: Ih. Wilson et al., ION IMPACTS AND NANOSTRUCTURES ON GE(111), IN0.22GA0.78AS GAAS(100) AND ALPHA-QUARTZ SURFACES OBSERVED BY ATOMIC-FORCE MICROSCOPY/, Surface and interface analysis, 24(13), 1996, pp. 881-886
GRAIN-BOUNDARY ENHANCED OXYGEN OUT-DIFFUSION IN ANNEALED POLYCRYSTALLINE SI SIO2/CRYSTALLINE SI STRUCTURES/
Authors: DEVINE RAB MATHIOT D XU JB WILSON IH GAUNEAU M WARREN WL
Citation: Rab. Devine et al., GRAIN-BOUNDARY ENHANCED OXYGEN OUT-DIFFUSION IN ANNEALED POLYCRYSTALLINE SI SIO2/CRYSTALLINE SI STRUCTURES/, Thin solid films, 286(1-2), 1996, pp. 317-320
O INTERSTITIAL GENERATION AND DIFFUSION IN HIGH-TEMPERATURE ANNEALED SI SIO2/SI STRUCTURES/
Authors: DEVINE RAB MATHIOT D WARREN WL ASPAR B
Citation: Rab. Devine et al., O INTERSTITIAL GENERATION AND DIFFUSION IN HIGH-TEMPERATURE ANNEALED SI SIO2/SI STRUCTURES/, Journal of applied physics, 79(5), 1996, pp. 2302-2308
A PROPOSED MODEL FOR POSITIVE CHARGE IN SIO2 THIN-FILMS OVER-COORDINATED OXYGEN CENTERS
Authors: WARREN WL VANHEUSDEN K FLEETWOOD DM SCHWANK JR SHANEYFELT MR WINOKUR PS DEVINE RAB
Citation: Wl. Warren et al., A PROPOSED MODEL FOR POSITIVE CHARGE IN SIO2 THIN-FILMS OVER-COORDINATED OXYGEN CENTERS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2617-2626
Risultati: 1-25 | 26-50 | 51-59