ACNP - Italian Periodicals Catalogue

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Results: 1-10 |

Results: 10

SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN BETA-SIC(100) SURFACES - GROWTH AND MORPHOLOGY

Authors: SEMOND F DOUILLARD L SOUKIASSIAN P MAYNE A DUJARDIN G DICIOCCIO L JAUSSAUD C

Citation: F. Semond et al., SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN BETA-SIC(100) SURFACES - GROWTH AND MORPHOLOGY, Surface review and letters, 5(1), 1998, pp. 207-211

COMPARISON OF THE ELECTRICAL AND OPTICAL-PROPERTIES OF 3C-SIC ON SOI FROM DIFFERENT ORIGIN

Authors: BLUET JM CONTRERASAZEMA S CAMASSEL J ROBERT JL DICIOCCIO L REICHERT W LOSSY R OBERMEIER E STOEMENOS J

Citation: Jm. Bluet et al., COMPARISON OF THE ELECTRICAL AND OPTICAL-PROPERTIES OF 3C-SIC ON SOI FROM DIFFERENT ORIGIN, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 152-155

HIGH-TEMPERATURE OHMIC CONTACTS TO 3C-SIC GROWN ON SI SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION

Authors: CONSTANTINIDIS G KORNILIOS N ZEKENTES K STOEMENOS J DICIOCCIO L

Citation: G. Constantinidis et al., HIGH-TEMPERATURE OHMIC CONTACTS TO 3C-SIC GROWN ON SI SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 176-179

SILICON-CARBIDE ON INSULATOR FORMATION BY THE SMART-CUT(R) PROCESS

Authors: DICIOCCIO L LETERTRE F LETIEC Y PAPON AM JAUSSAUD C BRUEL M

Citation: L. Dicioccio et al., SILICON-CARBIDE ON INSULATOR FORMATION BY THE SMART-CUT(R) PROCESS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 349-356

SYNCHROTRON-RADIATION STUDY OF CS CARBON-RICH BETA-SIC(100) AND CS/SILICON-RICH BETA-SIC(100) SURFACES - METALLIZATION AND INTERFACE FORMATION/

Authors: SEMOND F SOUKIASSIAN P MANGAT PS HURYCH Z DICIOCCIO L JAUSSAUD C

Citation: F. Semond et al., SYNCHROTRON-RADIATION STUDY OF CS CARBON-RICH BETA-SIC(100) AND CS/SILICON-RICH BETA-SIC(100) SURFACES - METALLIZATION AND INTERFACE FORMATION/, Applied surface science, 104, 1996, pp. 79-87

SILICON-CARBIDE ON INSULATOR FORMATION USING THE SMART CUT PROCESS

Authors: DICIOCCIO L LETIEC Y LETERTRE F JAUSSAUD C BRUEL M

Citation: L. Dicioccio et al., SILICON-CARBIDE ON INSULATOR FORMATION USING THE SMART CUT PROCESS, Electronics Letters, 32(12), 1996, pp. 1144-1145

NA CARBON-RICH BETA-SIC(100) SURFACE - INITIAL INTERFACE FORMATION AND METALLIZATION/

Authors: SEMOND F SOUKIASSIAN P MANGAT PS DICIOCCIO L

Citation: F. Semond et al., NA CARBON-RICH BETA-SIC(100) SURFACE - INITIAL INTERFACE FORMATION AND METALLIZATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1591-1596

UNINTENTIONAL INCORPORATION OF CONTAMINANTS DURING CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE

Authors: KARMANN S DICIOCCIO L BLANCHARD B OUISSE T MUYARD D JAUSSAUD C

Citation: S. Karmann et al., UNINTENTIONAL INCORPORATION OF CONTAMINANTS DURING CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 134-137

ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/

Authors: BILLON T BANO E DICIOCCIO L OUISSE T LASSAGNE P JAUSSAUD C

Citation: T. Billon et al., ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/, Microelectronic engineering, 28(1-4), 1995, pp. 193-196

SURFACE-POTENTIAL FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON DIFFERENT SILICON-CARBIDE POLYTYPES

Authors: BANO E OUISSE T DICIOCCIO L KARMANN S

Citation: E. Bano et al., SURFACE-POTENTIAL FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON DIFFERENT SILICON-CARBIDE POLYTYPES, Applied physics letters, 65(21), 1994, pp. 2723-2724

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