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Results: 1-12 |
Results: 12
COMPARISON OF THE SUBMICRON PARTICLE ANALYSIS CAPABILITIES OF AUGER-ELECTRON SPECTROSCOPY, TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY, AND SCANNING ELECTRON-MICROSCOPY WITH ENERGY-DISPERSIVE X-RAY SPECTROSCOPY FOR PARTICLES DEPOSITED ON SILICON-WAFERS WITH ONE MICRON THICK OXIDE LAYERS (VOL 16, PG 1825, 1998)
Authors: DIEBOLD AC LINDLEY P VITERALLI J KINGSLEY J LIU BYH WOO KS
Citation: Ac. Diebold et al., COMPARISON OF THE SUBMICRON PARTICLE ANALYSIS CAPABILITIES OF AUGER-ELECTRON SPECTROSCOPY, TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY, AND SCANNING ELECTRON-MICROSCOPY WITH ENERGY-DISPERSIVE X-RAY SPECTROSCOPY FOR PARTICLES DEPOSITED ON SILICON-WAFERS WITH ONE MICRON THICK OXIDE LAYERS (VOL 16, PG 1825, 1998), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 3148-3148
COMPARISON OF THE SUBMICRON PARTICLE ANALYSIS CAPABILITIES OF AUGER-ELECTRON SPECTROSCOPY, TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY, AND SCANNING ELECTRON-MICROSCOPY WITH ENERGY-DISPERSIVE X-RAY SPECTROSCOPY FOR PARTICLES DEPOSITED ON SILICON-WAFERS WITH 1 MU-M THICK OXIDELAYERS
Authors: DIEBOLD AC LINDLEY P VITERALLI J KINGSLEY J LIU BYH WOO KS
Citation: Ac. Diebold et al., COMPARISON OF THE SUBMICRON PARTICLE ANALYSIS CAPABILITIES OF AUGER-ELECTRON SPECTROSCOPY, TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY, AND SCANNING ELECTRON-MICROSCOPY WITH ENERGY-DISPERSIVE X-RAY SPECTROSCOPY FOR PARTICLES DEPOSITED ON SILICON-WAFERS WITH 1 MU-M THICK OXIDELAYERS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1825-1831
USING HEAVY-ION BACKSCATTERING SPECTROMETRY (HIBS) TO SOLVE INTEGRATED-CIRCUIT MANUFACTURING PROBLEMS
Authors: BANKS JC DOYLE BL KNAPP JA WERHO D GREGORY RB ANTHONY M HURD TQ DIEBOLD AC
Citation: Jc. Banks et al., USING HEAVY-ION BACKSCATTERING SPECTROMETRY (HIBS) TO SOLVE INTEGRATED-CIRCUIT MANUFACTURING PROBLEMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1223-1228
NEXT-GENERATION METROLOGY MUST MEET CHALLENGES
Authors: DIEBOLD AC MONAHAN K
Citation: Ac. Diebold et K. Monahan, NEXT-GENERATION METROLOGY MUST MEET CHALLENGES, Solid state technology, 41(2), 1998, pp. 50
CALIBRATION OF REFERENCE MATERIALS FOR TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS BY HEAVY-ION BACKSCATTERING SPECTROMETRY
Authors: WERHO D GREGORY R SCHAUER S LIU X CARNEY G BANKS J KNAPP J DOYLE B DIEBOLD AC
Citation: D. Werho et al., CALIBRATION OF REFERENCE MATERIALS FOR TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS BY HEAVY-ION BACKSCATTERING SPECTROMETRY, Spectrochimica acta, Part B: Atomic spectroscopy, 52(7), 1997, pp. 881-886
CHARACTERIZATION OF 2-DIMENSIONAL DOPANT PROFILES - STATUS AND REVIEW
Authors: DIEBOLD AC KUMP MR KOPANSKI JJ SEILER DG
Citation: Ac. Diebold et al., CHARACTERIZATION OF 2-DIMENSIONAL DOPANT PROFILES - STATUS AND REVIEW, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 196-201
2ND WORKSHOP ON INDUSTRIAL APPLICATIONS OF SCANNED PROBE MICROSCOPY GAITHERSBURG, MD MAY 2-3, 1995 - ABSTRACTS
Authors: DAGATA JA DIEBOLD AC SHIH CKK COLTON RJ
Citation: Ja. Dagata et al., 2ND WORKSHOP ON INDUSTRIAL APPLICATIONS OF SCANNED PROBE MICROSCOPY GAITHERSBURG, MD MAY 2-3, 1995 - ABSTRACTS, Journal of research of the National Institute of Standards and Technology, 101(1), 1996, pp. 69-76
COMPARISON OF SUBMICRON PARTICLE ANALYSIS BY AUGER-ELECTRON SPECTROSCOPY, TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY, AND SECONDARY-ELECTRON MICROSCOPY WITH ENERGY-DISPERSIVE X-RAY SPECTROSCOPY
Authors: CHILDS KD NARUM D LAVANIER LA LINDLEY PM SCHUELER BW MULHOLLAND G DIEBOLD AC
Citation: Kd. Childs et al., COMPARISON OF SUBMICRON PARTICLE ANALYSIS BY AUGER-ELECTRON SPECTROSCOPY, TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY, AND SECONDARY-ELECTRON MICROSCOPY WITH ENERGY-DISPERSIVE X-RAY SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2392-2404
CALIBRATION ISSUES FOR TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS OF SURFACE METALLIC CONTAMINATION ON SILICON
Authors: DIEBOLD AC
Citation: Ac. Diebold, CALIBRATION ISSUES FOR TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS OF SURFACE METALLIC CONTAMINATION ON SILICON, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1919-1923
MATERIALS AND FAILURE ANALYSIS-METHODS AND SYSTEMS USED IN THE DEVELOPMENT AND MANUFACTURE OF SILICON INTEGRATED-CIRCUITS
Authors: DIEBOLD AC
Citation: Ac. Diebold, MATERIALS AND FAILURE ANALYSIS-METHODS AND SYSTEMS USED IN THE DEVELOPMENT AND MANUFACTURE OF SILICON INTEGRATED-CIRCUITS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2768-2778
CHARACTERIZATION OF NI ON SI WAFERS - COMPARISON OF SURFACE-ANALYSIS TECHNIQUES
Authors: CALAWAY WF COON SR PELLIN MJ GRUEN DM GORDON M DIEBOLD AC MAILLOT P BANKS JC KNAPP JA
Citation: Wf. Calaway et al., CHARACTERIZATION OF NI ON SI WAFERS - COMPARISON OF SURFACE-ANALYSIS TECHNIQUES, Surface and interface analysis, 21(2), 1994, pp. 131-137
RANDOMLY ORIENTED ANGSTROM-SCALE MICROROUGHNESS AT THE SI(100) SIO2 INTERFACE PROBED BY OPTICAL 2ND-HARMONIC GENERATION
Authors: DADAP JI DORIS B DENG Q DOWNER MC LOWELL JK DIEBOLD AC
Citation: Ji. Dadap et al., RANDOMLY ORIENTED ANGSTROM-SCALE MICROROUGHNESS AT THE SI(100) SIO2 INTERFACE PROBED BY OPTICAL 2ND-HARMONIC GENERATION, Applied physics letters, 64(16), 1994, pp. 2139-2141
Risultati: 1-12 |