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Results: 1-25/28
Authors:
NARAYANAN V
SUKIDI N
HU CM
DIETZ N
BACHMANN KJ
MAHAJAN S
SHINGUBARA S
Citation: V. Narayanan et al., GROWTH OF GALLIUM-PHOSPHIDE LAYERS BY CHEMICAL BEAM EPITAXY ON OXIDE PATTERNED (001)SILICON SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 54(3), 1998, pp. 207-209
Authors:
ASPNES DE
DIETZ N
Citation: De. Aspnes et N. Dietz, OPTICAL APPROACHES FOR CONTROLLING EPITAXIAL-GROWTH, Applied surface science, 132, 1998, pp. 367-376
Authors:
DIETZ N
ITO K
Citation: N. Dietz et K. Ito, REAL-TIME OPTICAL CHARACTERIZATION OF GAP HETEROSTRUCTURES BY P-POLARIZED REFLECTANCE, Thin solid films, 313, 1998, pp. 614-619
Authors:
BACHMANN KJ
SUKIDI N
HOPFNER C
HARRIS C
DIETZ N
TRAN HT
BEELER S
ITO K
BANKS HT
Citation: Kj. Bachmann et al., REAL-TIME MONITORING OF STEADY-STATE PULSED CHEMICAL BEAM EPITAXY BY P-POLARIZED REFLECTANCE, Journal of crystal growth, 183(3), 1998, pp. 323-337
Authors:
MAEDA J
SASAKI Y
DIETZ N
SHIBAHARA K
YOKOYAMA S
MIYAZAKI S
HIROSE M
Citation: J. Maeda et al., HIGH-RATE GAAS EPITAXIAL LIFT-OFF TECHNIQUE FOR OPTOELECTRONIC INTEGRATED-CIRCUITS, JPN J A P 1, 36(3B), 1997, pp. 1554-1557
Authors:
DIETZ N
SUKIDI N
HARRIS C
BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME MONITORING OF SURFACE PROCESSES BY P-POLARIZED REFLECTANCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 807-815
Authors:
BACHMANN KJ
ROSSOW U
SUKIDI N
CASTLEBERRY H
DIETZ N
Citation: Kj. Bachmann et al., HETEROEPITAXY OF GAP ON SI(100), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3019-3029
Authors:
ROSSOW U
DIETZ N
BACHMANN KJ
ASPNES DE
Citation: U. Rossow et al., OPTICAL INVESTIGATIONS OF SURFACE PROCESSES IN GAP HETEROEPITAXY ON SILICON UNDER PULSED CHEMICAL BEAM EPITAXY CONDITIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3040-3046
Authors:
WALLER S
LIN XM
DIETZ N
Citation: S. Waller et al., EFFECTS OF DEFEROXAMINE (DEF) AND A VITAMIN-E POOR DIET (LO-VIT-E) ONEEG RESPONSES DURING REPETITIVE ISCHEMIA, The FASEB journal, 10(3), 1996, pp. 3887-3887
Authors:
DIETZ N
ROSSOW U
ASPNES DE
BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME OPTICAL MONITORING OF HETEROEPITAXIAL GROWTH-PROCESSES ON SI UNDER PULSED CHEMICAL BEAM EPITAXY CONDITIONS, Applied surface science, 102, 1996, pp. 47-51
Authors:
DIETZ N
BACHMANN KJ
Citation: N. Dietz et Kj. Bachmann, P-POLARIZED REFLECTANCE SPECTROSCOPY - A HIGHLY SENSITIVE REAL-TIME MONITORING TECHNIQUE TO STUDY SURFACE KINETICS UNDER STEADY-STATE EPITAXIAL DEPOSITION CONDITIONS, Vacuum, 47(2), 1996, pp. 133-140
Authors:
DIETZ N
ROSSOW U
ASPNES DE
BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME OPTICAL MONITORING OF GAXIN1-XP AND GAP HETEROEPITAXY ON SIUNDER PULSED CHEMICAL BEAM CONDITIONS, Journal of crystal growth, 164(1-4), 1996, pp. 34-39
Authors:
ROMANO J
HENS M
DIETZ N
OGLE R
Citation: J. Romano et al., REGULATION OF INTEGRIN SUBUNIT EXPRESSION IN MURINE MELANOMA-CELLS, Molecular biology of the cell, 6, 1995, pp. 1647-1647
Authors:
BACHMANN KJ
ROSSOW U
DIETZ N
Citation: Kj. Bachmann et al., REAL-TIME MONITORING OF HETEROEPITAXIAL GROWTH-PROCESSES ON THE SILICON(001) SURFACE BY P-POLARIZED REFLECTANCE SPECTROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 472-478
Authors:
DIETZ N
BACHMANN KJ
Citation: N. Dietz et Kj. Bachmann, REAL-TIME MONITORING OF EPITAXIAL PROCESSES BY PARALLEL-POLARIZED REFLECTANCE SPECTROSCOPY, MRS bulletin, 20(5), 1995, pp. 49-55
Authors:
BACHMANN KJ
DIETZ N
MILLER AE
VENABLES D
KELLIHER JT
Citation: Kj. Bachmann et al., HETEROEPITAXY OF LATTICE-MATCHED COMPOUND SEMICONDUCTORS ON SILICON, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 696-704
Authors:
DIETZ N
MILLER A
BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME MONITORING OF HOMOEPITAXIAL AND HETEROEPITAXIAL PROCESSES BY P-POLARIZED REFLECTANCE SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(1), 1995, pp. 153-155
Authors:
DIETZ N
ROSSOW U
ASPNES D
BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME OPTICAL MONITORING OF EPITAXIAL-GROWTH - PULSED CHEMICAL BEAM EPITAXY OF GAP AND INP HOMOEPITAXY AND HETEROEPITAXY ON SI, Journal of electronic materials, 24(11), 1995, pp. 1571-1576
Authors:
KELLIHER JT
MILLER AE
DIETZ N
HABERMEHL S
CHEN YL
LU Z
LUCOVSKY G
BACHMANN KJ
Citation: Jt. Kelliher et al., INTERRUPTED CYCLE CHEMICAL BEAM EPITAXY OF GALLIUM-PHOSPHIDE ON SILICON WITH OR WITHOUT PHOTON ASSISTANCE, Applied surface science, 86(1-4), 1995, pp. 453-456
Authors:
DIETZ N
MILLER A
KELLIHER JT
VENABLES D
BACHMANN KJ
Citation: N. Dietz et al., MIGRATION-ENHANCED PULSED CHEMICAL BEAM EPITAXY OF GAP ON SI(001), Journal of crystal growth, 150(1-4), 1995, pp. 691-695
Authors:
CATTARIN S
GUERRIERO P
DIETZ N
LEWERENZ HJ
Citation: S. Cattarin et al., ELECTRODISSOLUTION AND CORROSION OF CUINS2 PHOTOANODES WITH LAMELLAR MORPHOLOGY, Electrochimica acta, 40(8), 1995, pp. 1041-1049
Authors:
CATTARIN S
PAGURA C
ARMELAO L
BERTONCELLO R
DIETZ N
Citation: S. Cattarin et al., SURFACE CHARACTERIZATION OF CULNS(2) WITH LAMELLAR MORPHOLOGY, Journal of the Electrochemical Society, 142(8), 1995, pp. 2818-2823
Authors:
HABERMEHL S
DIETZ N
LU Z
BACHMANN KJ
LUCOVSKY G
Citation: S. Habermehl et al., HETEROEPITAXIAL GROWTH OF SI ON GAP AND GAAS-SURFACES BY REMOTE, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 990-994
Authors:
CATTARIN S
DIETZ N
LEWERENZ HJ
Citation: S. Cattarin et al., CUINS2 WITH LAMELLAR MORPHOLOGY .1. EFFICIENT PHOTOANODES IN ACIDIC POLYIODIDE MEDIUM, Journal of the Electrochemical Society, 141(5), 1994, pp. 1095-1099
Authors:
DIETZ N
TSVEYBAK I
RUDERMAN W
WOOD G
BACHMANN KJ
Citation: N. Dietz et al., NATIVE DEFECT RELATED OPTICAL-PROPERTIES OF ZNGEP2, Applied physics letters, 65(22), 1994, pp. 2759-2761